Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition

Type:
Journal
Info:
ACS Nano, 2013, 7 (12), pp 11333-11340
Date:
2013-11-19

Author Information

Name Institution
Jeong-Gyu SongYonsei University
Jusang ParkYonsei University
Wonseon LeeYonsei University
Taejin ChoiYonsei University
Hanearl JungYonsei University
Chang Wan LeeYonsei University
Sung-Hwan HwangYonsei University
Jae Min MyoungYonsei University
Jae-Hoon JungYeungnam University
Clement Lansalot-MatrasAir Liquide
Hyungjun KimYonsei University

Films

Plasma WO3


Film/Plasma Properties

Characteristic: Images
Analysis: Optical Microscopy

Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy

Characteristic: Raman Shift
Analysis: Raman Spectroscopy

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Electron Mobility
Analysis: -

Characteristic: Subthreshold Swing
Analysis: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Elemental Mapping
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

SiO2

Keywords

2D Material

Notes

Thermal ALD HfO2 used for high-k gate dielectric on FET tests.
137