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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
Type:
Journal
Info:
The Journal of Chemical Physics 146, 052818 (2017)
Date:
2016-11-29
Author Information
| Name | Institution |
|---|---|
| Ivo Johannes Maria Erkens | Eindhoven University of Technology |
| Marcel A. Verheijen | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| Wytze Keuning | Eindhoven University of Technology |
| Fred Roozeboom | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Pt
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
Keywords
Notes
| 897 |