Publication Information

Title: Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits

Type: Journal

Info: Journal of Applied Physics 100, 073512 (2006)

Date: 2006-06-16

DOI: http://dx.doi.org/10.1063/1.2349477

Author Information

Name

Institution

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

SLAC National Accelerator Laboratory

Uppsala University

Uppsala University

University of California - Los Angeles (UCLA)

Films

Deposition Temperature = 350C

35733-23-4

15632-39-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG ESCALAB 5

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

PHI RBS-400

Microstructure

EXAFS, Extended X-ray Absorption Fine Structure

Synchrotron

Microstructure

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

ELS, EELS, Electron Energy Loss Spectroscopy

FEI Tecnai F30ST

Photoluminescence

PL, PhotoLuminescence

Custom

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

-

Substrates

Si(100)

Keywords

Notes

1315



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