
Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
Type:
Journal
Info:
Journal of Applied Physics 100, 073512 (2006)
Date:
2006-06-16
Author Information
Name | Institution |
---|---|
Trinh Tu Van | University of California - Los Angeles (UCLA) |
J. Hoang | University of California - Los Angeles (UCLA) |
R. Ostroumov | University of California - Los Angeles (UCLA) |
K. L. Wang | University of California - Los Angeles (UCLA) |
John R. Bargar | SLAC National Accelerator Laboratory |
J. Lu | Uppsala University |
H.-O. Blom | Uppsala University |
Jane P. Chang | University of California - Los Angeles (UCLA) |
Films
Plasma Er:Y2O3
Hardware used: Custom Microwave Plasma
Er(TMHD)3, Er(THD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) erbium, Erbium dipivaloylmethanate
CAS#: 35733-23-4
CAS#: 7782-44-7
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Microstructure
Analysis: EXAFS, Extended X-ray Absorption Fine Structure
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Substrates
Si(100) |
Notes
1315 |