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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300Β°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
tris(2,2,6,6-tetramethyl-3,5-heptanedionato) yttrium Y(tmhd)3, CAS# 15632-39-0
Where to buy
| Number | Vendor | Region | Link |
|---|---|---|---|
| 1 | Pegasus Chemicals | π¬π§ | Yttrium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) |
| 2 | Strem Chemicals, Inc. | πΊπΈ | Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III), 98+% (99.9%-Y) [Y(TMHD)3] |
| 3 | EpiValence | π¬π§ | Yttrium tetramethylheptanedionate |
| 4 | Ereztech | πΊπΈ | 2,2,6,6-Tetramethyl-3,5-heptanedionate yttrium(III) |
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Plasma Enhanced Atomic Layer Deposition Film Publications
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