Controlled erbium incorporation and photoluminescence of Er-doped Y2O3

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 87, 011907 2005
Date:
2005-07-01
DOI:
http://dx.doi.org/10.1063/1.1984082

Author Information

Name Institution
Trinh Tu VanUniversity of California - Los Angeles (UCLA)
Jane P. ChangUniversity of California - Los Angeles (UCLA)

Films

Plasma Y2O3

Hardware used: Custom
tris(2,2,6,6-tetramethyl-3,5-heptanedionato) yttrium Y(tmhd)3
CAS#: 15632-39-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma Er2O3

Hardware used: Custom
tris(2,2,6,6-tetramethyl-3,5-heptanedionato) erbium, Er(thmd)3
CAS#: 35733-23-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Optical Properties
Analysis: PL, PhotoLuminescence
Diagnostic: -

Substrates

Si(100)

Keywords

Optical
Er-doping
Photoluminescence

Notes

References 11 and 13 discuss Er2O3 and Y2O3 processes.
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