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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 87, 011907 2005
Date:
2005-07-01
Author Information
| Name | Institution |
|---|---|
| Trinh Tu Van | University of California - Los Angeles (UCLA) |
| Jane P. Chang | University of California - Los Angeles (UCLA) |
Films
Plasma Er2O3
Hardware used: Custom
Er(TMHD)3, Er(THD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) erbium, Erbium dipivaloylmethanate
CAS#: 35733-23-4
CAS#: 7782-44-7
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Optical Properties
Analysis: PL, PhotoLuminescence
Substrates
| Si(100) |
Notes
| References 11 and 13 discuss Er2O3 and Y2O3 processes. |
| 36 |