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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides

Type:
Journal
Info:
Applied Surface Science 246 (2005) 250 - 261
Date:
2004-11-04
DOI:
https://doi.org/10.1016/j.apsusc.2004.11.025

Author Information

Name Institution
Trinh Tu VanUniversity of California - Los Angeles (UCLA)
Yu-Wei ChangUniversity of California - Los Angeles (UCLA)

Films

Plasma Er2O3

Hardware used: Custom Microwave Plasma
Er(TMHD)3, Er(THD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) erbium, Erbium dipivaloylmethanate
CAS#: 35733-23-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-300C

Plasma Y2O3

Hardware used: Custom Microwave Plasma
tris(2,2,6,6-tetramethyl-3,5-heptanedionato) yttrium Y(tmhd)3
CAS#: 15632-39-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Characteristic: Surface Reactions
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: Maxtek, Inc. BSH-150

Substrates

Si(100)

Notes

1263