Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon

Type:
Journal
Info:
physica status solidi (a) Volume 216, Issue 17, pages 1900306
Date:
2019-07-05

Author Information

Name Institution
Svetlana BeljakowaFriedrich-Alexander University Erlangen-Nuremberg
Peter PichlerFraunhofer Institute for Integrated Systems and Device Technology (IISB)
Bodo KalkofenUniversity of Magdeburg
René HübnerHelmholtz-Zentrum Dresden-Rossendorf

Films

Plasma B2O3


Plasma Sb2O5


Plasma POx

Hardware used: SENTECH


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Keywords

Doping

Notes

1582