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Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)

Type:
Conference Proceedings
Info:
Mat. Res. Soc. Symp. Proc. Vol. 685E
Date:
2001-01-01
DOI:
http://dx.doi.org/10.1557/PROC-685-D13.3.1

Author Information

Name Institution
Won-Jae LeeElectronics and Telecommunication Research Institute, (ETRI)
Chang-Ho ShinElectronics and Telecommunication Research Institute, (ETRI)
In-Kyu YouElectronics and Telecommunication Research Institute, (ETRI)
Il-Suk YangElectronics and Telecommunication Research Institute, (ETRI)
Sang-Ouk RyuElectronics and Telecommunication Research Institute, (ETRI)
Byoung-Gon YuElectronics and Telecommunication Research Institute, (ETRI)
Kyoung-Ik ChoElectronics and Telecommunication Research Institute, (ETRI)
Soon-Gil YoonChungnam National University
Chun-Su LeeGenitech Co., Ltd.

Films

Plasma SrTa2O6

Hardware used: Custom
Sr(Ta(OEt)5-dmae)2
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Unknown
Analysis: Anneal
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Characteristic: Dissipation Factors
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

Pt

Notes

8A per cycle, perhaps CVD component
23