Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Type:
Journal
Info:
Nature Nanotechnology volume 5, pages 148-153 (2010)
Date:
2009-11-25
DOI:
http://dx.doi.org/10.1038/nnano.2009.456

Author Information

Name Institution
Deok-Hwang KwonSeoul National University
Kyung Min KimSeoul National University
Jae Hyuck JangSeoul National University
Jong Myeong JeonSeoul National University
Min Hwan LeeSeoul National University
Gun Hwan KimSeoul National University
Xiang-Shu LiSamsung Advanced Institute of Technology
Gyeong-Su ParkSamsung Advanced Institute of Technology
Bora LeeEwha Womans University
Seungwu HanSeoul National University
Miyoung KimSeoul National University
Cheol Seong HwangSeoul National University

Films

Plasma TiO2

Hardware used: Custom Hot-wire
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Substrates

Pt

Notes

1189