Publication Information

Title:
Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A148 (2012)
Date:
2011-11-08

Author Information

Name Institution
Lin ChenFudan University
Wen YangFudan University
Ye LiFudan University
Qing-Qing SunFudan University
Peng ZhouFudan University
Hong Liang LuFudan University
Shi-Jin DingFudan University
David Wei ZhangFudan University

Films

Plasma La2O3


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Resistance RAM

Notes

665