Publication Information

Title: Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application

Type: Journal

Info: Journal of Vacuum Science & Technology A 30, 01A148 (2012)

Date: 2011-11-08

DOI: http://dx.doi.org/10.1116/1.3669516

Author Information

Name

Institution

Fudan University

Fudan University

Fudan University

Fudan University

Fudan University

Fudan University

Fudan University

Fudan University

Films

Plasma La2O3 using Custom

Deposition Temperature Range = 200-450C

14319-13-2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Resistive Switching

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

Si(100)

Keywords

Resistance RAM

Notes

665



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