Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A148 (2012)
Date:
2011-11-08
DOI:
http://dx.doi.org/10.1116/1.3669516

Author Information

Name Institution
Lin ChenFudan University
Wen YangFudan University
Ye LiFudan University
Qing-Qing SunFudan University
Peng ZhouFudan University
Hong Liang LuFudan University
Shi-Jin DingFudan University
David Wei ZhangFudan University

Films

Plasma La2O3

Hardware used: Custom
La(TMHD)3, La(THD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) lanthanum, Lanthanum dipivaloylmethanate
CAS#: 14319-13-2
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-450C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Si(100)

Notes

665