About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A148 (2012)
Date:
2011-11-08

Author Information

Name Institution
Lin ChenFudan University
Wen YangFudan University
Ye LiFudan University
Qing-Qing SunFudan University
Peng ZhouFudan University
Hong Liang LuFudan University
Shi-Jin DingFudan University
David Wei ZhangFudan University

Films

Plasma La2O3


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Notes

665