Plasma enhanced atomic layer deposition of Fe2O3 thin films
Author Information
| Name | Institution |
|---|---|
| Ranjith K. Ramachandran | Ghent University |
Films
Plasma Fe2O3
Film/Plasma Properties
Substrates
| Silicon |
Notes
| PEALD Fe2O3 film development. |
| 275 |
The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.
Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.
Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.
| Name | Institution |
|---|---|
| Ranjith K. Ramachandran | Ghent University |
| Silicon |
| PEALD Fe2O3 film development. |
| 275 |