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Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Plasma enhanced atomic layer deposition of Fe2O3 thin films

Type:
Journal
Info:
J. Mater. Chem. A, 2014,2, 10662-10667
Date:
2014-05-19
DOI:
http://dx.doi.org/10.1039/C4TA01486C

Author Information

Name Institution
Ranjith K. RamachandranGhent University

Films

Plasma Fe2O3

Hardware used: Custom
t-Butylferrocene, (TBF), (t-BuCp)2Fe
CAS#: 1316-98-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Substrates

Silicon

Notes

PEALD Fe2O3 film development.
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