Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Type:
Journal
Info:
Nanomaterials 2021, 11, 978
Date:
2021-04-07
Author Information
Name | Institution |
---|---|
Ming-Jie Zhao | Xiamen University of Technology |
Zhi-Xuan Zhang | Xiamen University of Technology |
Chia-Hsun Hsu | Xiamen University of Technology |
Xiao-Ying Zhang | Xiamen University of Technology |
Wan-Yu Wu | Da-Yeh University |
Shui-Yang Lien | Xiamen University of Technology |
Wen-Zhang Zhu | Xiamen University of Technology |
Films
Plasma In2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transmittance
Analysis: Optical Transmission
Characteristic: Reflectance Spectra
Analysis: Optical Reflectivity
Characteristic: Optical Bandgap
Analysis: Optical Transmission
Characteristic: Carrier Concentration
Analysis: Hall Measurements
Characteristic: Mobility
Analysis: Hall Measurements
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Substrates
Silicon |
Glass |
Notes
1658 |