Exploiting atomic layer deposition for fabricating sub-10nm X-ray lenses

Type:
Journal
Info:
Microelectronic Engineering 191 (2018) 91 - 96
Date:
2018-01-30
DOI:
https://doi.org/10.1016/j.mee.2018.01.033

Author Information

Name Institution
Benedikt RösnerPaul Scherrer Institut
Frieder KochPaul Scherrer Institut
Florian DöringPaul Scherrer Institut
Jeroen BosgraPaul Scherrer Institut
Vitaliy A. GuzenkoPaul Scherrer Institut
Eugenie KirkPaul Scherrer Institut
Markus MeyerFriedrich-Alexander University Erlangen-Nuremberg
Joshua L. OrnelasFriedrich-Alexander University Erlangen-Nuremberg
Rainer H. FinkFriedrich-Alexander University Erlangen-Nuremberg
Stefan StanescuSynchrotron SOLEIL
Sufal SwarajSynchrotron SOLEIL
Rachid BelkhouSynchrotron SOLEIL
Benjamin WattsPaul Scherrer Institut
Jörg RaabePaul Scherrer Institut
Christian DavidPaul Scherrer Institut

Films

Plasma Ir

Hardware used: Picosun R200
Ir(acac)3, Iridium acetylacetonate, Iridium pentanedione
CAS#: 15635-87-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 370C

Film/Plasma Properties

Substrates

HSQ, Hydrogen SilsesQuioxane
Si3N4

Notes

1230