Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 031509 (2013)
Date:
2013-03-12
DOI:
http://dx.doi.org/10.1116/1.4798385

Author Information

Name Institution
Rohan P. ChaukulkarColorado School of Mines
Sumit AgarwalColorado School of Mines

Films

Plasma TiO2

Hardware used: Custom
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Substrates

ZnSe

Notes

The plasma ALD TiO2 film was just the substrate for the main study of the paper which was thermal ALD TiO2 from TTIP and TiCl4.
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