Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 031509 (2013)
Date:
2013-03-12
DOI:
http://dx.doi.org/10.1116/1.4798385

Author Information

Name Institution
Rohan P. ChaukulkarColorado School of Mines
Sumit AgarwalColorado School of Mines

Films

Plasma TiO2

Hardware used: Custom
TTIP, Titanium(IV) i-propoxide
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Substrates

ZnSe

Keywords

Notes

The plasma ALD TiO2 film was just the substrate for the main study of the paper which was thermal ALD TiO2 from TTIP and TiCl4.
594