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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 031509 (2013)
Date:
2013-03-12
Author Information
| Name | Institution |
|---|---|
| Rohan P. Chaukulkar | Colorado School of Mines |
| Sumit Agarwal | Colorado School of Mines |
Films
Film/Plasma Properties
Substrates
| ZnSe |
Keywords
Notes
| The plasma ALD TiO2 film was just the substrate for the main study of the paper which was thermal ALD TiO2 from TTIP and TiCl4. |
| 594 |