Publication Information

Title:
Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 031512 (2015)
Date:
2015-04-03

Author Information

Name Institution
Bodo KalkofenOtto-von-Guericke University
Akinwumi A. AmusanOtto-von-Guericke University
Muhammad S. K. BukhariOtto-von-Guericke University
Bernd GarkeOtto-von-Guericke University
Marco LiskerIHP
Hassan GargouriSentech Instruments GmbH
Edmund P. BurteOtto-von-Guericke University

Films

Plasma B2O3


Plasma Sb2O5



CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Substrates

Keywords

Notes

358