Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2

Type:
Journal
Info:
Journal of Physics: Conference Series 2086 (2021) 012209
Date:
2021-09-07
DOI:
http://dx.doi.org/10.1088/1742-6596/2086/1/012209

Author Information

Name Institution
Elizaveta SmirnovaRussian Academy of Sciences
Andrey V. MiakonkikhRussian Academy of Sciences
Alexander E. RogozhinRussian Academy of Sciences
Konstantin V. RudenkoRussian Academy of Sciences

Films

Plasma RuO2

Hardware used: Oxford Instruments FlexAL
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-375C

Plasma Ru

Hardware used: Oxford Instruments FlexAL
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 375-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000X

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Ultra 55

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: Zygo NewView 5000

Substrates

Silicon
SiO2
TaN

Notes

1735