Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 032415 (2021)
Date:
2021-04-16
DOI:
http://dx.doi.org/10.1116/6.0000968

Author Information

Name Institution
Chen WangXiamen University
Chun-Hui BaoXiamen University
Wan-Yu WuDa-Yeh University
Chia-Hsun HsuXiamen University
Ming-Jie ZhaoXiamen University
Shui-Yang LienXiamen University
Wen-Zhang ZhuXiamen University

Films

Plasma MoOx

Hardware used: Picosun R200
Molybdenum hexacarbonyl, Mo(CO)6
CAS#: 13939-06-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 175-250C

Film/Plasma Properties

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy
Diagnostic: Hong-Ming Technology MFS-630

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku TTRAX III

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension 5

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7800F

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Verity instruments SD2048DL

Substrates

Si(100)
Glass
Quartz

Notes

1564