Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Advanced Materials Research (Volume 1088), pp 107-111
Date:
2014-07-11

Author Information

Name Institution
Jian Shuang LiuYangzhou University

Films

Plasma La2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

High-k Dielectric Thin Films
Gate Dielectric
PEALD Film Development

Notes

Beneq TFS-200 PEALD La2O3 film development.
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