Title: Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
Type: Journal
Info: Advanced Materials Research (Volume 1088), pp 107-111
Date: 2014-07-11
DOI: http://dx.doi.org/10.4028/www.scientific.net/AMR.1088.107
Name
Institution
Yangzhou University
Characteristic
Analysis
Diagnostic
Chemical Composition, Impurities
XPS, X-ray Photoelectron Spectroscopy
Unknown
Hysteresis
C-V, Capacitance-Voltage Measurements
Unknown
Interface Trap Density
C-V, Capacitance-Voltage Measurements
Unknown
Flat Band Voltage
C-V, Capacitance-Voltage Measurements
Unknown
Leakage Current
I-V, Current-Voltage Measurements
Unknown
Silicon
High-k Dielectric Thin Films
Gate Dielectric
PEALD Film Development
Beneq TFS-200 PEALD La2O3 film development.
268
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