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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Advanced Materials Research (Volume 1088), pp 107-111
Date:
2014-07-11
Author Information
| Name | Institution |
|---|---|
| Jian Shuang Liu | Yangzhou University |
Films
Plasma La2O3
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Notes
| Beneq TFS-200 PEALD La2O3 film development. |
| 268 |