Publication Information

Title: Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition

Type: Journal

Info: Advanced Materials Research (Volume 1088), pp 107-111

Date: 2014-07-11

DOI: http://dx.doi.org/10.4028/www.scientific.net/AMR.1088.107

Author Information

Name

Institution

Jian Shuang Liu

Yangzhou University

Films

Plasma La2O3 using Beneq TFS-200

Deposition Temperature = 300C

La(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) lanthanum

14319-13-2

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Substrates

Silicon

Keywords

High-k Dielectric Thin Films

Gate Dielectric

PEALD Film Development

Notes

Beneq TFS-200 PEALD La2O3 film development.

268


Mark Sowa

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