Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Advanced Materials Research (Volume 1088), pp 107-111
Date:
2014-07-11
DOI:
http://dx.doi.org/10.4028/www.scientific.net/AMR.1088.107

Author Information

Name Institution
Jian Shuang LiuYangzhou University

Films

Plasma La2O3

Hardware used: Beneq TFS-200
La(TMHD)3, La(THD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) lanthanum, Lanthanum dipivaloylmethanate
CAS#: 14319-13-2
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Keywords

High-k Dielectric Thin Films
Gate Dielectric
PEALD Film Development

Notes

Beneq TFS-200 PEALD La2O3 film development.
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