Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films

Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 745, 2018, Pages 834-839
Date:
2018-02-05
DOI:
https://doi.org/10.1016/j.jallcom.2018.02.046

Author Information

Name Institution
Wei ZengNorthwestern Polytechnical University
Li-ping FengNorthwestern Polytechnical University
Jie SuNorthwestern Polytechnical University
Hai-xi PanNorthwestern Polytechnical University
Zheng-tang LiuNorthwestern Polytechnical University

Films

Plasma WO3

Hardware used: KEMICRO PEALD-200A
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 125-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Substrates

SiO2

Notes

1710