Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020918 (2019)
Date:
2019-01-17

Author Information

Name Institution
Rémi VallatGrenoble Alps University (UGA)
Rémy GassilloudCEA - LETI MINATEC
Olivier SalicioGrenoble Alps University (UGA)
Khalil El-HajjamCEA - LETI MINATEC
Gabriel MolasCEA - LETI MINATEC
Bernard PelissierGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Etch Rate
Analysis: Custom

Substrates

Silicon
SiO2
SiF
SiOF
TiN

Notes

1248