Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide

Type:
Journal
Info:
J. Phys. Chem. C, 2009, 113 (30), pp 12962-12965
Date:
2009-06-08
DOI:
http://dx.doi.org/10.1021/jp903669c

Author Information

Name Institution
Vikrant R. RaiColorado School of Mines
Sumit AgarwalColorado School of Mines

Films

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-44

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-44

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Substrates

ZnSe
Silicon

Notes

758