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Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
Type:
Journal
Info:
Chem. Mater. 2017, 29, 1107-1115
Date:
2017-01-17
Author Information
| Name | Institution |
|---|---|
| Dustin Zachary Austin | Oregon State University |
| Melanie A. Jenkins | Oregon State University |
| Derryl Allman | ON Semiconductor |
| Sallie Hose | ON Semiconductor |
| David Price | ON Semiconductor |
| Charles L. Dezelah | EMD Performance Materials |
| John F. Conley, Jr. | Oregon State University |
Films
Thermal Ru
Thermal RuO2
Plasma RuO2
Film/Plasma Properties
Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Characteristic: Precursor Vapor Pressure
Analysis: TGA, Thermo Gravimetric Analysis
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Substrates
| SiO2 |
Notes
| Avaiilable in thesis: Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors |
| 1069 |