Publication Information

Title:
Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
Type:
Journal
Info:
Chem. Mater. 2017, 29, 1107-1115
Date:
2017-01-17

Author Information

Name Institution
Dustin Zachary AustinOregon State University
Melanie A. JenkinsOregon State University
Derryl AllmanON Semiconductor
Sallie HoseON Semiconductor
David PriceON Semiconductor
Charles L. DezelahEMD Performance Materials
John F. Conley, Jr.Oregon State University

Films

Thermal Ru


Thermal RuO2


Plasma RuO2


Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Precursor Vapor Pressure
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

Avaiilable in thesis: Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors
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