Publication Information

Title: Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor

Type: Journal

Info: Chem. Mater. 2017, 29, 1107-1115

Date: 2017-01-17

DOI: http://dx.doi.org/10.1021/acs.chemmater.6b04251

Author Information

Name

Institution

Oregon State University

Oregon State University

ON Semiconductor

ON Semiconductor

ON Semiconductor

EMD Performance Materials

Oregon State University

Films

Thermal Ru using Picosun R200

Deposition Temperature Range = 280-300C

0-0-0

7782-44-7

Thermal RuO2 using Picosun R200

Deposition Temperature Range = 210-250C

0-0-0

7782-44-7

Plasma RuO2 using Picosun R200

Deposition Temperature Range = 190-250C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Precursor Characterization

TGA, Thermo Gravimetric Analysis

TA Instruments Model Q50

Precursor Vapor Pressure

TGA, Thermo Gravimetric Analysis

TA Instruments Model Q50

Thickness

XRR, X-Ray Reflectivity

Rigaku Ultima IV

Density

XRR, X-Ray Reflectivity

Rigaku Ultima IV

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Ultima IV

Thickness

Ellipsometry

J.A. Woollam M-2000

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Asylum Research MFP-3D

Resistivity, Sheet Resistance

Four-point Probe

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI Versaprobe II

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

PHI Versaprobe II

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

1069



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