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Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor

Type:
Journal
Info:
Chem. Mater. 2017, 29, 1107-1115
Date:
2017-01-17
DOI:
http://dx.doi.org/10.1021/acs.chemmater.6b04251

Author Information

Name Institution
Dustin Zachary AustinOregon State University
Melanie A. JenkinsOregon State University
Derryl AllmanON Semiconductor
Sallie HoseON Semiconductor
David PriceON Semiconductor
Charles L. DezelahEMD Performance Materials
John F. Conley, Jr.Oregon State University

Films

Thermal Ru

Hardware used: Picosun R200
η4-2,3-dimethylbutadiene ruthenium tricarbonyl, Ru(DMBD)(CO)3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 280-300C

Thermal RuO2

Hardware used: Picosun R200
η4-2,3-dimethylbutadiene ruthenium tricarbonyl, Ru(DMBD)(CO)3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 210-250C

Plasma RuO2

Hardware used: Picosun R200
η4-2,3-dimethylbutadiene ruthenium tricarbonyl, Ru(DMBD)(CO)3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 190-250C

Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: TA Instruments Model Q50

Characteristic: Precursor Vapor Pressure
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: TA Instruments Model Q50

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Ultima IV

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Ultima IV

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Ultima IV

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: PHI Versaprobe II

Substrates

SiO2

Notes

Avaiilable in thesis: Atomic Layer Deposition of Multi-Insulator Metal-Insulator-Metal Capacitors
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