Publication Information

Title: Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy

Type: Journal

Info: Applied Physics Letters 95, 013114 (2009)

Date: 2009-06-23

DOI: http://dx.doi.org/10.1063/1.3176946

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma Pt using Custom ICP

Deposition Temperature = 300C

94442-22-5

7782-44-7

Thermal Pt using Custom

Deposition Temperature = 300C

94442-22-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Pt

Keywords

Notes

PEALD Pt was used as the seed layer for the thermal ALD Pt which was the focus of the article.

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