Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition

Type:
Journal
Info:
Materials Letters, Volume 246, Pages 1-4
Date:
2019-03-19

Author Information

Name Institution
Dong-Kwon LeeHynix Semiconductor
Se-Hun KwonPusan National University
Ji-Hoon AhnKorea Maritime and Ocean University

Films

Plasma TiO2


Plasma SnO2

Hardware used: Custom


CAS#: 7782-44-7


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Substrates

TiN
SnO2

Keywords

Notes

1568