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Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
Type:
Journal
Info:
Mater. Res. Express 7 (apr) 046401
Date:
2020-03-24
Author Information
| Name | Institution |
|---|---|
| Lin-Yan Xie | Fudan University |
| Dong-Qi Xiao | Fudan University |
| Jun-Xiang Pei | Fudan University |
| Jingyong Huo | Fudan University |
| Xiaohan Wu | Fudan University |
| Wen-Jun Liu | Fudan University |
| Shi-Jin Ding | Fudan University |
Films
Plasma NiOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Conductivity Type
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Substrates
| Silicon |
| Quartz |
| TaN |
Notes
| 1476 |