Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

Type:
Journal
Info:
Mater. Res. Express 7 (apr) 046401
Date:
2020-03-24
DOI:
http://dx.doi.org/10.1088/2053-1591/ab82c9

Author Information

Name Institution
Lin-Yan XieFudan University
Dong-Qi XiaoFudan University
Jun-Xiang PeiFudan University
Jingyong HuoFudan University
Xiaohan WuFudan University
Wen-Jun LiuFudan University
Shi-Jin DingFudan University

Films

Plasma NiOx

Hardware used: Picosun R200
Bis(cyclopentadienyl)nickel, Nickelocene, Cp2Ni
CAS#: 1271-28-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer lambda 950 Spectrophotometer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Conductivity Type
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Talos F200X

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Talos F200X

Substrates

Silicon
Quartz
TaN

Notes

1476