Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
Type:
Journal
Info:
ECS Transactions, 25 (4) 39-47 (2009)
Date:
2009-10-04
Author Information
| Name | Institution |
|---|---|
| Merijn E. Donders | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Peter H. L. Notten | Eindhoven University of Technology |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| Si with native oxide |
| SiO2 |
Notes
| 42 |