Publication Information

Title: Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: Journal of The Electrochemical Society, 158 (8) G169-G172 (2011)

Date: 2011-06-01

DOI: http://dx.doi.org/10.1149/1.3594766

Author Information

Name

Institution

Yonsei University

Yonsei University

Samsung Electronics Co.

Air Liquide

Air Liquide

Air Liquide

Applied Materials

Applied Materials

Applied Materials

Yonsei University

Films

Deposition Temperature = 250C

122528-16-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Interface State Density

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Evaporation Characteristics

TGA, Thermo Gravimetric Analysis

-

Thickness

Ellipsometry

-

Refractive Index

Ellipsometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Substrates

Si(100)

Keywords

Annealing

Atomic Layer Deposition

Cerium Compounds

Current Density

Leakage Currents

MOS Capacitors

Plasma CVD

Stoichiometry

Thermal Stability

Notes

Films underwent O2 anneal.

Substrates RCA cleaned + HF dipped.

37



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