Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (8) G169-G172 (2011)
Date:
2011-06-01
Author Information
| Name | Institution |
|---|---|
| Woo-Hee Kim | Yonsei University |
| Min-Kyu Kim | Yonsei University |
| Wan Joo Maeng | Samsung Electronics Co. |
| Julien Gatineau | Air Liquide |
| Venkat Pallem | Air Liquide |
| Christian Dussarrat | Air Liquide |
| Atif Noori | Applied Materials |
| David Thompson | Applied Materials |
| Schubert Chu | Applied Materials |
| Hyungjun Kim | Yonsei University |
Films
Plasma CeO2
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Evaporation Characteristics
Analysis: TGA, Thermo Gravimetric Analysis
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si(100) |
Notes
| Films underwent O2 anneal. |
| Substrates RCA cleaned + HF dipped. |
| 37 |