Publication Information

Title:
Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (8) G169-G172 (2011)
Date:
2011-06-01

Author Information

Name Institution
Woo-Hee KimYonsei University
Min-Kyu KimYonsei University
Wan Joo MaengSamsung Electronics Co.
Julien GatineauAir Liquide
Venkat PallemAir Liquide
Christian DussarratAir Liquide
Atif NooriApplied Materials
David ThompsonApplied Materials
Schubert ChuApplied Materials
Hyungjun KimYonsei University

Films

Plasma CeO2


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Evaporation Characteristics
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Keywords

Annealing
Atomic Layer Deposition
Cerium Compounds
Current Density
Leakage Currents
MOS Capacitors
Plasma CVD
Stoichiometry
Thermal Stability

Notes

Films underwent O2 anneal.
Substrates RCA cleaned + HF dipped.
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