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ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition

Type:
Journal
Info:
Japanese Journal of Applied Physics 50 (2011) 04DF05
Date:
2010-12-15
DOI:
http://dx.doi.org/10.1143/jjap.50.04df05

Author Information

Name Institution
Yumi KawamuraNara Institute of Science and Technology
Nozomu HattoriMitsui Engineering & Shipbuilding Co., Ltd.
Naomasa MiyatakeMitsui Engineering & Shipbuilding Co., Ltd.
Masahiro HoritaNara Institute of Science and Technology
Yukiharu UraokaCREST, Japan Science and Technology Agency

Films

Plasma ZnO

Hardware used: Custom
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent 4156C

Substrates

Silicon

Notes

1361