Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2

Type:
Journal
Info:
The Journal of Chemical Physics 151, 204701 (2019)
Date:
2019-11-03

Author Information

Name Institution
M. G. KozodaevMoscow Institute of Physics and Technology
Yuri Yu. LebedinskiiMoscow Institute of Physics and Technology
A. G. ChernikovaMoscow Institute of Physics and Technology
E. V. KorostylevMoscow Institute of Physics and Technology
A. ChouprikMoscow Institute of Physics and Technology
R. R. KhakimovMoscow Institute of Physics and Technology
Andrey M. MarkeevMoscow Institute of Physics and Technology
Cheol Seong HwangSeoul National University

Films

Plasma Ru


Plasma RuO2


Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

Ta2O5

Keywords

Notes

1541