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Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
Type:
Journal
Info:
The Journal of Chemical Physics 151, 204701 (2019)
Date:
2019-11-03
Author Information
| Name | Institution |
|---|---|
| M. G. Kozodaev | Moscow Institute of Physics and Technology |
| Yuri Yu. Lebedinskii | Moscow Institute of Physics and Technology |
| A. G. Chernikova | Moscow Institute of Physics and Technology |
| E. V. Korostylev | Moscow Institute of Physics and Technology |
| A. Chouprik | Moscow Institute of Physics and Technology |
| R. R. Khakimov | Moscow Institute of Physics and Technology |
| Andrey M. Markeev | Moscow Institute of Physics and Technology |
| Cheol Seong Hwang | Seoul National University |
Films
Plasma Ru
Plasma RuO2
Film/Plasma Properties
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Substrates
| Ta2O5 |
Notes
| 1541 |