Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene]
Type:
Journal
Info:
Applied Surface Science 493 (2019) 125-130
Date:
2019-06-25
Author Information
Name | Institution |
---|---|
Jung-Hoon Lee | Hanyang University |
Hye-Mi Kim | Hanyang University |
Seung-Hwan Lee | Hanyang University |
Jung Woo Park | Hansol Chemical |
Jongryul Park | Hansol Chemical |
Jin-Seong Park | Hanyang University |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
Silicon |
Notes
1719 |