Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene]

Type:
Journal
Info:
Applied Surface Science 493 (2019) 125-130
Date:
2019-06-25

Author Information

Name Institution
Jung-Hoon LeeHanyang University
Hye-Mi KimHanyang University
Seung-Hwan LeeHanyang University
Jung Woo ParkHansol Chemical
Jongryul ParkHansol Chemical
Jin-Seong ParkHanyang University

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Notes

1719