Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma

Type:
Journal
Info:
Korean Journal of Chemical Engineering, December 2018, Volume 35, Issue 12, pp 2474-2479
Date:
2018-10-23
DOI:
http://dx.doi.org/10.1007/s11814-018-0179-5

Author Information

Name Institution
Su-Hyeon JiChonnam National University
Woo-Sung JangChonnam National University
Jeong-Wook SonChonnam National University
Do-Heyoung KimChonnam National University

Films

Plasma NiOx

Hardware used: Custom
Bis(ethylcyclopentadienyl)nickel, (EtCp)2Ni
CAS#: 31886-51-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-325C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Gaertner

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific Multilab 2000

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Substrates

Silicon

Notes

1214