Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (2) G34-G38 (2011)
Date:
2010-11-05
DOI:
http://dx.doi.org/10.1149/1.3522768

Author Information

Name Institution
E. LangereisEindhoven University of Technology
R. RoijmansEindhoven University of Technology
Fred RoozeboomEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SrTiO3

Hardware used: Custom Remote Inductively Coupled Plasma
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
Where to buy precursor
Hyper-Sr, bis(tri-isopropylcyclopentadienyl)strontium with 1,2-demethoxy-ethane adduct, Sr(iPr3Cp)2DME
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

695