1 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
2 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
3 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
4 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
5 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
6 | New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell |
7 | Atmospheric pressure plasma enhanced spatial ALD of silver |
8 | Atomic layer epitaxy of Si using atomic H |
9 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
10 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
11 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
12 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
13 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
14 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
15 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
16 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
17 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
18 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
19 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
20 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
21 | Self-limiting diamond growth from alternating CFx and H fluxes |
22 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
23 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
24 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
25 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
26 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |
27 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
28 | Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers |
29 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
30 | Atomic layer deposition of YMnO3 thin films |
31 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
32 | Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition |
33 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
34 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
35 | Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy |
36 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
37 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
38 | Graphene-based MMIC process development and RF passives design |
39 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
40 | Plasma-enhanced atomic layer deposition for plasmonic TiN |
41 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
42 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
43 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
44 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
45 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
46 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
47 | Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering |
48 | The important role of water in growth of monolayer transition metal dichalcogenides |
49 | Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study |
50 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
51 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
52 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
53 | Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition |
54 | Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes |
55 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
56 | Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells |
57 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
58 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
59 | Atomic layer deposition of titanium nitride from TDMAT precursor |
60 | Gadolinium nitride films deposited using a PEALD based process |
61 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
62 | Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor |
63 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
64 | Properties of AlN grown by plasma enhanced atomic layer deposition |
65 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
66 | Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition |
67 | TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition |
68 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
69 | Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia |
70 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
71 | Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO |
72 | Comparative study of ALD SiO2 thin films for optical applications |
73 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
74 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
75 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
76 | Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition |
77 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
78 | Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor |
79 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
80 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
81 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
82 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
83 | Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma |
84 | Innovative remote plasma source for atomic layer deposition for GaN devices |
85 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
86 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
87 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
88 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
89 | Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD |
90 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
91 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
92 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
93 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
94 | Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S |
95 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
96 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
97 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
98 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
99 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
100 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
101 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
102 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
103 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
104 | Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing |
105 | Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition |
106 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
107 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
108 | Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition |
109 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
110 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
111 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
112 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
113 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
114 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
115 | Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
116 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
117 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
118 | Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition |
119 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
120 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
121 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
122 | Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition |
123 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
124 | Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition |
125 | Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma |
126 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
127 | Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition |
128 | Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate |
129 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
130 | Composite materials and nanoporous thin layers made by atomic layer deposition |
131 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
132 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
133 | Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma |
134 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
135 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
136 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
137 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
138 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
139 | Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia |
140 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
141 | Room temperature atomic layer deposition of TiO2 on gold nanoparticles |
142 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
143 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
144 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
145 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
146 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
147 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
148 | Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition |
149 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
150 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
151 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
152 | Experimental and theoretical determination of the role of ions in atomic layer annealing |
153 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
154 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
155 | Plasma enhanced atomic layer deposition of zinc sulfide thin films |
156 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
157 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
158 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
159 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
160 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
161 | PEALD AlN: controlling growth and film crystallinity |
162 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
163 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
164 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
165 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
166 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
167 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
168 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
169 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
170 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
171 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
172 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
173 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
174 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
175 | Microwave properties of superconducting atomic-layer deposited TiN films |
176 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
177 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
178 | Plasma enhanced atomic layer deposition of Fe2O3 thin films |
179 | Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity |
180 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
181 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
182 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
183 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
184 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
185 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
186 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
187 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
188 | Plasma-Assisted Atomic Layer Deposition of Palladium |
189 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
190 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
191 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
192 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
193 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
194 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
195 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
196 | Hysteresis behaviour of top-down fabricated ZnO nanowire transistors |
197 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
198 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
199 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
200 | In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition |
201 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
202 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
203 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
204 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
205 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
206 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
207 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
208 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
209 | Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas |
210 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
211 | Layer-by-layer epitaxial growth of GaN at low temperatures |
212 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
213 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
214 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
215 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
216 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
217 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
218 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
219 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
220 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
221 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
222 | Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance |
223 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
224 | Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition |
225 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
226 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
227 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
228 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
229 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
230 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
231 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
232 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
233 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
234 | Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries |
235 | Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance |
236 | Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns |
237 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
238 | Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment |
239 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
240 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
241 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
242 | Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs |
243 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
244 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
245 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
246 | Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology |
247 | A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition |
248 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
249 | Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells |
250 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
251 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
252 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
253 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
254 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
255 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
256 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
257 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
258 | Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling |
259 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
260 | Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy |
261 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
262 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
263 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
264 | Optical and Electrical Properties of AlxTi1-xO Films |
265 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
266 | Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx |
267 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
268 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
269 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
270 | Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires |
271 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
272 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
273 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
274 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
275 | Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 |
276 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
277 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
278 | Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source |
279 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
280 | Fast PEALD ZnO Thin-Film Transistor Circuits |
281 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
282 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
283 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
284 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
285 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
286 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
287 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
288 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
289 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
290 | RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor |
291 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
292 | Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium |
293 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
294 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
295 | Thin film GaP for solar cell application |
296 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
297 | Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition |
298 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
299 | Plasma-induced sub-10nm Au-SnO2-In2O3 heterostructures fabricated by atomic layer deposition for highly sensitive ethanol detection on ppm level |
300 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
301 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
302 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
303 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
304 | Plasma-enhanced atomic layer deposition of zinc phosphate |
305 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
306 | In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells |
307 | Plasma Enhanced Atomic Layer Deposition on Powders |
308 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
309 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
310 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
311 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
312 | Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces |
313 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
314 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
315 | Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition |
316 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
317 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
318 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
319 | ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition |
320 | Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications |
321 | Influence of Precursor Density and Conversion Time on the Orientation of Vapor-Deposited ZIF-8 |
322 | Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor |
323 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
324 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
325 | Topographically selective deposition |
326 | Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature |
327 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
328 | Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing |
329 | Atomic layer controlled deposition of silicon nitride with self-limiting mechanism |
330 | Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries |
331 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
332 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
333 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
334 | Plasma-enhanced atomic layer deposition of BaTiO3 |
335 | Analysis of nitrogen species in titanium oxynitride ALD films |
336 | Plasma enhanced atomic layer deposition of gallium sulfide thin films |
337 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
338 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
339 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
340 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
341 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
342 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
343 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
344 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
345 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
346 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
347 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
348 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
349 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
350 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
351 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
352 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
353 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
354 | Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature |
355 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
356 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
357 | Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition |
358 | Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries |
359 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
360 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
361 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
362 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
363 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
364 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
365 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
366 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
367 | Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation |
368 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
369 | Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer |
370 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
371 | Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone |
372 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
373 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
374 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
375 | Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films |
376 | Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition |
377 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
378 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
379 | Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma |
380 | Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition |
381 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
382 | Texture of atomic layer deposited ruthenium |
383 | GeSbTe deposition for the PRAM application |
384 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
385 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
386 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
387 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
388 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
389 | High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane |
390 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
391 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
392 | Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution |
393 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
394 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
395 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
396 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
397 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
398 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
399 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
400 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
401 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
402 | Evaluation of plasma parameters on PEALD deposited TaCN |
403 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
404 | Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control |
405 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
406 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
407 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
408 | A route to low temperature growth of single crystal GaN on sapphire |
409 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
410 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
411 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
412 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
413 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
414 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
415 | Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors |
416 | Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition |
417 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
418 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
419 | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
420 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
421 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
422 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
423 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
424 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
425 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
426 | Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces |
427 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
428 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
429 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
430 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
431 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
432 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
433 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
434 | Room-Temperature Atomic Layer Deposition of Platinum |
435 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
436 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
437 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
438 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
439 | Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries |
440 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
441 | Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier |
442 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
443 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
444 | Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology |
445 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
446 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
447 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
448 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
449 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
450 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
451 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
452 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
453 | Electron-enhanced atomic layer deposition of silicon thin films at room temperature |
454 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
455 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
456 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
457 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
458 | Challenges in spacer process development for leading-edge high-k metal gate technology |
459 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
460 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
461 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
462 | Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate |
463 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
464 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
465 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
466 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
467 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
468 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
469 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
470 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
471 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
472 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
473 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
474 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
475 | Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films |
476 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
477 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
478 | Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
479 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
480 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
481 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
482 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
483 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
484 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
485 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
486 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
487 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
488 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
489 | Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration |
490 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
491 | Low temperature plasma enhanced deposition of GaP films on Si substrate |
492 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
493 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
494 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
495 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
496 | Atomic layer epitaxy of germanium |
497 | Structural and optical characterization of low-temperature ALD crystalline AlN |
498 | Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis |
499 | Spectroscopy and control of near-surface defects in conductive thin film ZnO |
500 | Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process |
501 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
502 | Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl |
503 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
504 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
505 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
506 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
507 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
508 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
509 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
510 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
511 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
512 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
513 | Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon |
514 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
515 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
516 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
517 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
518 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
519 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
520 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
521 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
522 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
523 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
524 | Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source |
525 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
526 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
527 | Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers |
528 | Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon |
529 | GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope |
530 | In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition |
531 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
532 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
533 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
534 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
535 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
536 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
537 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
538 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
539 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
540 | Crystalline growth of AlN thin films by atomic layer deposition |
541 | Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3 |
542 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
543 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
544 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
545 | Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition |
546 | Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN |
547 | Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates |
548 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
549 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
550 | Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum |
551 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
552 | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide |
553 | Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma |
554 | Perspectives on future directions in III-N semiconductor research |
555 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
556 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
557 | Atomic Layer Deposition of SiN for spacer applications in high-end logic devices |
558 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
559 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
560 | Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl |
561 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
562 | Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium |
563 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization |
564 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
565 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
566 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
567 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
568 | Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition |
569 | Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection |
570 | Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range |
571 | Self-Limiting Growth of GaN at Low Temperatures |
572 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
573 | Plasma-enhanced ALD system for SRF cavity |
574 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
575 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
576 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
577 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
578 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
579 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
580 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
581 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
582 | Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
583 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
584 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
585 | Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate |
586 | Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries |
587 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
588 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
589 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
590 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
591 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
592 | A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application |
593 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
594 | Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment |
595 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
596 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
597 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
598 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
599 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
600 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
601 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
602 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
603 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
604 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
605 | Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2 |
606 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
607 | Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting |
608 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
609 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
610 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
611 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
612 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
613 | Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy |
614 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
615 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
616 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
617 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
618 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
619 | High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD |
620 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
621 | Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach |
622 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
623 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
624 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
625 | Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films |
626 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
627 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
628 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
629 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
630 | SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition |
631 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
632 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
633 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
634 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
635 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
636 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
637 | Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer |
638 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
639 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
640 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
641 | Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition |
642 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
643 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
644 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
645 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
646 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
647 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
648 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
649 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
650 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
651 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
652 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
653 | Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma |
654 | Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene] |
655 | Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET |
656 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
657 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
658 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
659 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
660 | Carbon content control of silicon oxycarbide film with methane containing plasma |
661 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
662 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
663 | An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor |
664 | Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition |
665 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
666 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
667 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
668 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
669 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
670 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
671 | Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer |
672 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
673 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
674 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
675 | Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon |
676 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
677 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
678 | Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources |
679 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
680 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
681 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
682 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
683 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
684 | Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices |
685 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
686 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
687 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
688 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
689 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
690 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
691 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
692 | Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches |
693 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
694 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
695 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
696 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
697 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
698 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
699 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
700 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
701 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
702 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
703 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
704 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
705 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
706 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
707 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
708 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
709 | Plasma-enhanced atomic layer deposition of vanadium nitride |
710 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
711 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
712 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
713 | Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells |
714 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
715 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
716 | Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide |
717 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
718 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
719 | Plasma-enhanced atomic layer deposition of tungsten nitride |
720 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
721 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
722 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
723 | Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma |
724 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
725 | Plasma-Enhanced Atomic Layer Deposition of Ni |
726 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
727 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
728 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
729 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
730 | Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP) |
731 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
732 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
733 | Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors |
734 | Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches |
735 | Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells |
736 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
737 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
738 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
739 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
740 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
741 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
742 | Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride |
743 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
744 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
745 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
746 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
747 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
748 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
749 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
750 | Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis |
751 | Advances in the fabrication of graphene transistors on flexible substrates |
752 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
753 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
754 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
755 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
756 | Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier |
757 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
758 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
759 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
760 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
761 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
762 | Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas |
763 | Atomic hydrogen-assisted ALE of germanium |
764 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
765 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
766 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
767 | Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition |
768 | Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films |
769 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
770 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
771 | Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure |
772 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
773 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
774 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
775 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
776 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
777 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
778 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
779 | In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications |
780 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
781 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
782 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
783 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
784 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
785 | Optical and Electrical Properties of TixSi1-xOy Films |
786 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
787 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
788 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
789 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
790 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
791 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
792 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
793 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
794 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
795 | Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition |
796 | Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition |
797 | Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth |
798 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
799 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
800 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
801 | Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation |
802 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
803 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
804 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
805 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
806 | Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys |
807 | Atomic layer deposition of GaN at low temperatures |
808 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
809 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
810 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
811 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
812 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
813 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
814 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
815 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
816 | Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition |
817 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
818 | Gallium nitride thin films by microwave plasma-assisted ALD |
819 | Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films |
820 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
821 | Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma |
822 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
823 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
824 | Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition |
825 | Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor |
826 | Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films |
827 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
828 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
829 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
830 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
831 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
832 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
833 | Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications |
834 | Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide |
835 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
836 | Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers |
837 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
838 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
839 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
840 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
841 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
842 | Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition |
843 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
844 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
845 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
846 | Controlling transition metal atomic ordering in two-dimensional Mo1-xWxS2 alloys |
847 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
848 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
849 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
850 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
851 | Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds |
852 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
853 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
854 | Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition |
855 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
856 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
857 | α-Ga2O3 grown by low temperature atomic layer deposition on sapphire |
858 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
859 | Large-Scale Deposition and Growth Mechanism of Silver Nanoparticles by Plasma-Enhanced Atomic Layer Deposition |
860 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
861 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
862 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
863 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
864 | Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate |
865 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
866 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
867 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
868 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
869 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
870 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
871 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
872 | Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition |
873 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
874 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
875 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
876 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
877 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
878 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
879 | Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content |
880 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
881 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
882 | Modal properties of a strip-loaded horizontal slot waveguide |
883 | Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition |
884 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
885 | Atomic layer epitaxy for quantum well nitride-based devices |
886 | Sub-nanometer heating depth of atomic layer annealing |
887 | The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films |
888 | Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating |
889 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
890 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
891 | Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen |
892 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
893 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
894 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |