Thickness Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
2A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
3A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
4A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
5A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
6A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
7A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
8A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
9A route to low temperature growth of single crystal GaN on sapphire
10Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
11Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
12Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
13Advances in the fabrication of graphene transistors on flexible substrates
14Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
15Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
16Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
17ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
18ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
19ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
20Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
21Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
22Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
23Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
24An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
25An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
26An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
27Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
28Analysis of nitrogen species in titanium oxynitride ALD films
29Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
30Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
31Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
32Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
33Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
34Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
35Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
36Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
37Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
38Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
39Atmospheric pressure plasma enhanced spatial ALD of silver
40Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
41Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
42Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
43Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
44Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
45Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
46Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
47Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
48Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
49Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
50Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
51Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
52Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
53Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
54Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
55Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
56Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
57Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
58Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
59Atomic layer deposition of GaN at low temperatures
60Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
61Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
62Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
63Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
64Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
65Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
66Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
67Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
68Atomic Layer Deposition of Niobium Nitride from Different Precursors
69Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
70Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
71Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
72Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
73Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
74Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
75Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
76Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
77Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
78Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
79Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
80Atomic Layer Deposition of the Solid Electrolyte LiPON
81Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
82Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
83Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
84Atomic layer deposition of titanium nitride from TDMAT precursor
85Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
86Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
87Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
88Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
89Atomic layer epitaxy for quantum well nitride-based devices
90Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
91AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
92Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
93Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
94Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
95Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
96Challenges in spacer process development for leading-edge high-k metal gate technology
97Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
98Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
99Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
100Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
101Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
102Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
103Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
104Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
105Characteristics of HfO2 thin films grown by plasma atomic layer deposition
106Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
107Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
108Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
109Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
110Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
111Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
112Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
113Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
114Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
115Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
116Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
117Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
118Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
119Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
120Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
121Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
122Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
123Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
124Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
125Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
126Comparative study of ALD SiO2 thin films for optical applications
127Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
128Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
129Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
130Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
131Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
132Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
133Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
134Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
135Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
136Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
137Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
138Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
139Composite materials and nanoporous thin layers made by atomic layer deposition
140Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
141Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
142Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
143Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
144Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
145Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
146Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
147Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
148Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
149Copper-ALD Seed Layer as an Enabler for Device Scaling
150Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
151Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
152Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
153Crystalline growth of AlN thin films by atomic layer deposition
154Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
155Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
156Damage evaluation in graphene underlying atomic layer deposition dielectrics
157DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
158Densification of Thin Aluminum Oxide Films by Thermal Treatments
159Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
160Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
161Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
162Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
163Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
164Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
165Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
166Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
167Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
168Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
169Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
170Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
171Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
172Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
173Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
174Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
175Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
176Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
177Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
178Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
179Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
180Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
181Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
182Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
183Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
184Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
185Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
186Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
187Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
188Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
189Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
190Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
191Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
192Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
193Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
194Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
195Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
196Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
197Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
198Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
199Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
200Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
201Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
202Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
203Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
204Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
205Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
206Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
207Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
208Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
209Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
210Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
211Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
212Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
213Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
214Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
215Evaluation of plasma parameters on PEALD deposited TaCN
216Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
217Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
218Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
219Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
220Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
221Fast PEALD ZnO Thin-Film Transistor Circuits
222Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
223Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
224Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
225Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
226Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
227Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
228Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
229Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
230Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
231Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
232Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
233GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
234Gadolinium nitride films deposited using a PEALD based process
235GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
236GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
237Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
238Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
239Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
240GeSbTe deposition for the PRAM application
241Graphene-based MMIC process development and RF passives design
242Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
243Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
244Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
245Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
246Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
247Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
248Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
249Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
250Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
251Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
252Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
253Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
254Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
255Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
256Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
257Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
258Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
259High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
260High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
261High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
262High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
263High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
264High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
265Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
266Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
267Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
268Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
269Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
270Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
271Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
272Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
273Hydrogen plasma-enhanced atomic layer deposition of copper thin films
274Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
275Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
276Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
277Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
278Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
279Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
280Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
281Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
282Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
283Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
284Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
285Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
286Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
287Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
288In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
289In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
290In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
291In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
292In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
293In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
294In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
295In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
296Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
297Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
298Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
299Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
300Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
301Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
302Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
303Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
304Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
305Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
306Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
307Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
308Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
309Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
310Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
311Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
312Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
313Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
314Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
315Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
316Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
317Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
318Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
319Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
320Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
321Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
322Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
323Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
324Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
325Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
326Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
327Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
328Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
329Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
330Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
331Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
332Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
333Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
334Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
335Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
336Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
337Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
338Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
339Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
340Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
341Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
342Low temperature plasma enhanced deposition of GaP films on Si substrate
343Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
344Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
345Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
346Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
347Low temperature temporal and spatial atomic layer deposition of TiO2 films
348Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
349Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
350Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
351Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
352Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
353Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
354Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
355Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
356Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
357Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
358Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
359Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
360Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
361Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
362Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
363Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
364Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
365Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
366Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
367Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
368Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
369Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
370Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
371Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
372Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
373Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
374Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
375Microwave properties of superconducting atomic-layer deposited TiN films
376Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
377Modal properties of a strip-loaded horizontal slot waveguide
378Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
379N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
380Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
381Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
382Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
383Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
384Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
385Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
386Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
387Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
388On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
389Optical and Electrical Properties of AlxTi1-xO Films
390Optical and Electrical Properties of TixSi1-xOy Films
391Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
392Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
393Optimization of the Surface Structure on Black Silicon for Surface Passivation
394Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
395Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
396Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
397Patterned deposition by plasma enhanced spatial atomic layer deposition
398PEALD AlN: controlling growth and film crystallinity
399PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
400PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
401PEALD of Copper using New Precursors for Next Generation of Interconnections
402PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
403PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
404PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
405Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
406Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
407Perspectives on future directions in III-N semiconductor research
408Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
409Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
410Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
411Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
412Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
413Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
414Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
415Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
416Plasma enhanced atomic layer deposition of aluminum sulfide thin films
417Plasma enhanced atomic layer deposition of Fe2O3 thin films
418Plasma enhanced atomic layer deposition of Ga2O3 thin films
419Plasma enhanced atomic layer deposition of gallium sulfide thin films
420Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
421Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
422Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
423Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
424Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
425Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
426Plasma enhanced atomic layer deposition of SiNx:H and SiO2
427Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
428Plasma enhanced atomic layer deposition of zinc sulfide thin films
429Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
430Plasma Enhanced Atomic Layer Deposition on Powders
431Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
432Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
433Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
434Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
435Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
436Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
437Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
438Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
439Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
440Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
441Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
442Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
443Plasma-Assisted Atomic Layer Deposition of Palladium
444Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
445Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
446Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
447Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
448Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
449Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
450Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
451Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
452Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
453Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
454Plasma-enhanced ALD system for SRF cavity
455Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
456Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
457Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
458Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
459Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
460Plasma-enhanced atomic layer deposition for plasmonic TiN
461Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
462Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
463Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
464Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
465Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
466Plasma-Enhanced Atomic Layer Deposition of Ni
467Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
468Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
469Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
470Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
471Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
472Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
473Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
474Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
475Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
476Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
477Plasma-enhanced atomic layer deposition of superconducting niobium nitride
478Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
479Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
480Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
481Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
482Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
483Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
484Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
485Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
486Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
487Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
488Plasma-enhanced atomic layer deposition of titanium vanadium nitride
489Plasma-enhanced atomic layer deposition of tungsten nitride
490Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
491Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
492Plasma-enhanced atomic layer deposition of vanadium nitride
493Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
494Plasma-enhanced atomic layer deposition of zinc phosphate
495Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
496Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
497Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
498Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
499Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
500Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
501Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
502Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
503Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
504Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
505Properties of AlN grown by plasma enhanced atomic layer deposition
506Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
507Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
508Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
509Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
510Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
511Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
512Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
513Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
514Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
515Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
516Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
517Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
518Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
519Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
520Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
521Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
522Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
523Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
524Remote Plasma ALD of Platinum and Platinum Oxide Films
525Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
526Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
527Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
528Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
529Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
530Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
531Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
532Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
533Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
534Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
535Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
536Room temperature atomic layer deposition of TiO2 on gold nanoparticles
537Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
538Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
539Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
540Room-Temperature Atomic Layer Deposition of Platinum
541Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
542Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
543RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
544RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
545Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
546Ru thin film grown on TaN by plasma enhanced atomic layer deposition
547Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
548Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
549Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
550Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
551Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
552Self-Limiting Growth of GaN at Low Temperatures
553Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
554Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
555Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
556Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
557Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
558Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
559Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
560Spectroscopy and control of near-surface defects in conductive thin film ZnO
561Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
562Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
563Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
564Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
565Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
566Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
567Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
568Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
569Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
570Structural and optical characterization of low-temperature ALD crystalline AlN
571Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
572Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
573Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
574Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
575Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
576Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
577Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
578Study on the characteristics of aluminum thin films prepared by atomic layer deposition
579Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
580Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
581Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
582Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
583Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
584Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
585Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
586Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
587Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
588Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
589Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
590Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
591Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
592Symmetrical Al2O3-based passivation layers for p- and n-type silicon
593Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
594Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
595Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
596Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
597Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
598Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
599Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
600Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
601Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
602Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
603TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
604Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
605Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
606The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
607The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
608The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
609The effects of layering in ferroelectric Si-doped HfO2 thin films
610The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
611The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
612The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
613The important role of water in growth of monolayer transition metal dichalcogenides
614The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
615The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
616The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
617The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
618The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
619Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
620Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
621Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
622Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
623Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
624Thin film GaP for solar cell application
625Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
626Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
627TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
628TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
629Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
630Tribological properties of thin films made by atomic layer deposition sliding against silicon
631Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
632Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
633Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
634Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
635Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
636Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
637Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
638Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
639Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
640Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
641Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
642Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
643Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
644Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
645Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
646Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
647Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
648WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
649Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
650Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
651ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
652ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
653ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


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