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Thickness Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Thickness returned 521 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
2A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
3A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
4A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
5A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
6A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
7A route to low temperature growth of single crystal GaN on sapphire
8Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
9Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
10Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
11Advances in the fabrication of graphene transistors on flexible substrates
12Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
13Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
14Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
15ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
16ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
17ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
18Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
19Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
20Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
21An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
22An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
23An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
24Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
25Analysis of nitrogen species in titanium oxynitride ALD films
26Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
27Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
28Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
29Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
30Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
31Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
32Atmospheric pressure plasma enhanced spatial ALD of silver
33Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
34Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
35Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
36Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
37Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
38Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
39Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
40Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
41Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
42Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
43Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
44Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
45Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
46Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
47Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
48Atomic layer deposition of GaN at low temperatures
49Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
50Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
51Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
52Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
53Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
54Atomic Layer Deposition of Niobium Nitride from Different Precursors
55Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
56Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
57Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
58Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
59Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
60Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
61Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
62Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
63Atomic Layer Deposition of the Solid Electrolyte LiPON
64Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
65Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
66Atomic layer deposition of titanium nitride from TDMAT precursor
67Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
68Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
69Atomic layer epitaxy for quantum well nitride-based devices
70Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
71AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
72Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
73Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
74Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
75Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
76Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
77Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
78Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
79Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
80Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
81Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
82Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
83Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
84Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
85Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
86Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
87Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
88Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
89Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
90Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
91Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
92Comparative study of ALD SiO2 thin films for optical applications
93Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
94Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
95Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
96Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
97Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
98Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
99Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
100Composite materials and nanoporous thin layers made by atomic layer deposition
101Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
102Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
103Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
104Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
105Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
106Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
107Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
108Copper-ALD Seed Layer as an Enabler for Device Scaling
109Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
110Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
111Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
112Crystalline growth of AlN thin films by atomic layer deposition
113Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
114Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
115Damage evaluation in graphene underlying atomic layer deposition dielectrics
116DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
117Densification of Thin Aluminum Oxide Films by Thermal Treatments
118Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
119Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
120Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
121Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
122Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
123Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
124Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
125Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
126Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
127Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
128Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
129Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
130Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
131Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
132Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
133Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
134Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
135Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
136Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
137Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
138Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
139Electrical characteristics of β-Ga2O3 thin films grown by PEALD
140Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
141Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
142Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
143Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
144Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
145Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
146Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
147Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
148Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
149Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
150Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
151Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
152Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
153Evaluation of plasma parameters on PEALD deposited TaCN
154Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
155Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
156Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
157Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
158Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
159Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
160Fast PEALD ZnO Thin-Film Transistor Circuits
161Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
162Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
163Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
164Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
165Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
166Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
167Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
168Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
169Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
170GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
171Gadolinium nitride films deposited using a PEALD based process
172GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
173GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
174Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
175Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
176Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
177Graphene-based MMIC process development and RF passives design
178Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
179Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
180Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
181Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
182Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
183Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
184Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
185Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
186Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
187Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
188High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
189High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
190High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
191High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
192High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
193Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
194Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
195Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
196Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
197Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
198Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
199Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
200Hydrogen plasma-enhanced atomic layer deposition of copper thin films
201Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
202Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
203Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
204Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
205Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
206Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
207Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
208Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
209Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
210Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
211In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
212In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
213In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
214In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
215In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
216Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
217Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
218Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
219Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
220Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
221Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
222Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
223Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
224Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
225Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
226Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
227Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
228Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
229Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
230Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
231Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
232Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
233Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
234Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
235Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
236Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
237Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
238Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
239Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
240Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
241Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
242Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
243Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
244Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
245Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
246Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
247Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
248Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
249Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
250Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
251Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
252Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
253Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
254Low temperature plasma enhanced deposition of GaP films on Si substrate
255Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
256Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
257Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
258Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
259Low temperature temporal and spatial atomic layer deposition of TiO2 films
260Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
261Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
262Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
263Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
264Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
265Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
266Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
267Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
268Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
269Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
270Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
271Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
272Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
273Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
274Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
275Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
276Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
277Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
278Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
279Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
280Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
281Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
282Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
283Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
284Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
285Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
286Microwave properties of superconducting atomic-layer deposited TiN films
287Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
288Modal properties of a strip-loaded horizontal slot waveguide
289Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
290N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
291Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
292Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
293Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
294Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
295Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
296On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
297Optical and Electrical Properties of AlxTi1-xO Films
298Optical and Electrical Properties of TixSi1-xOy Films
299Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
300Optimization of the Surface Structure on Black Silicon for Surface Passivation
301Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
302Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
303Patterned deposition by plasma enhanced spatial atomic layer deposition
304PEALD AlN: controlling growth and film crystallinity
305PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
306PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
307PEALD of Copper using New Precursors for Next Generation of Interconnections
308PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
309PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
310Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
311Perspectives on future directions in III-N semiconductor research
312Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
313Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
314Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
315Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
316Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
317Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
318Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
319Plasma enhanced atomic layer deposition of aluminum sulfide thin films
320Plasma enhanced atomic layer deposition of Fe2O3 thin films
321Plasma enhanced atomic layer deposition of Ga2O3 thin films
322Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
323Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
324Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
325Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
326Plasma enhanced atomic layer deposition of SiNx:H and SiO2
327Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
328Plasma enhanced atomic layer deposition of zinc sulfide thin films
329Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
330Plasma Enhanced Atomic Layer Deposition on Powders
331Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
332Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
333Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
334Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
335Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
336Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
337Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
338Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
339Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
340Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
341Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
342Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
343Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
344Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
345Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
346Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
347Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
348Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
349Plasma-enhanced ALD system for SRF cavity
350Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
351Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
352Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
353Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
354Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
355Plasma-enhanced atomic layer deposition for plasmonic TiN
356Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
357Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
358Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
359Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
360Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
361Plasma-Enhanced Atomic Layer Deposition of Ni
362Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
363Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
364Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
365Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
366Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
367Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
368Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
369Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
370Plasma-enhanced atomic layer deposition of superconducting niobium nitride
371Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
372Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
373Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
374Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
375Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
376Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
377Plasma-enhanced atomic layer deposition of tungsten nitride
378Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
379Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
380Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
381Plasma-enhanced atomic layer deposition of zinc phosphate
382Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
383Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
384Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
385Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
386Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
387Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
388Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
389Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
390Properties of AlN grown by plasma enhanced atomic layer deposition
391Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
392Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
393Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
394Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
395Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
396Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
397Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
398Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
399Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
400Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
401Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
402Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
403Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
404Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
405Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
406Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
407Remote Plasma ALD of Platinum and Platinum Oxide Films
408Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
409Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
410Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
411Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
412Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
413Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
414Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
415Room temperature atomic layer deposition of TiO2 on gold nanoparticles
416Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
417Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
418Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
419Room-Temperature Atomic Layer Deposition of Platinum
420Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
421Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
422RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
423RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
424Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
425Ru thin film grown on TaN by plasma enhanced atomic layer deposition
426Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
427Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
428Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
429Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
430Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
431Self-Limiting Growth of GaN at Low Temperatures
432Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
433Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
434Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
435Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
436Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
437Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
438Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
439Spectroscopy and control of near-surface defects in conductive thin film ZnO
440Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
441Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
442Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
443Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
444Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
445Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
446Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
447Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
448Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
449Structural and optical characterization of low-temperature ALD crystalline AlN
450Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
451Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
452Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
453Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
454Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
455Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
456Study on the characteristics of aluminum thin films prepared by atomic layer deposition
457Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
458Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
459Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
460Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
461Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
462Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
463Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
464Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
465Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
466Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
467Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
468Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
469Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
470Symmetrical Al2O3-based passivation layers for p- and n-type silicon
471Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
472Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
473Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
474Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
475Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
476Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
477Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
478Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
479TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
480Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
481Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
482The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
483The effects of layering in ferroelectric Si-doped HfO2 thin films
484The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
485The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
486The important role of water in growth of monolayer transition metal dichalcogenides
487The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
488The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
489The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
490The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
491The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
492Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
493Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
494Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
495Thin film GaP for solar cell application
496Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
497Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
498TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
499TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
500Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
501Tribological properties of thin films made by atomic layer deposition sliding against silicon
502Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
503Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
504Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
505Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
506Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
507Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
508Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
509Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
510Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
511Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
512Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
513Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
514Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
515Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
516Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
517Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
518Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
519Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
520Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
521ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


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