Thickness Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
2A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
3A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
4A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
5A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
6A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
7A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
8A route to low temperature growth of single crystal GaN on sapphire
9Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
10Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
11Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
12Advances in the fabrication of graphene transistors on flexible substrates
13Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
14Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
15Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
16ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
17ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
18ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
19Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
20Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
21Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
22Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
23An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
24An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
25An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
26Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
27Analysis of nitrogen species in titanium oxynitride ALD films
28Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
29Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
30Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
31Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
32Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
33Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
34Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
35Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
36Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
37Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
38Atmospheric pressure plasma enhanced spatial ALD of silver
39Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
40Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
41Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
42Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
43Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
44Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
45Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
46Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
47Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
48Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
49Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
50Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
51Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
52Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
53Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
54Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
55Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
56Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
57Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
58Atomic layer deposition of GaN at low temperatures
59Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
60Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
61Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
62Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
63Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
64Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
65Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
66Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
67Atomic Layer Deposition of Niobium Nitride from Different Precursors
68Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
69Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
70Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
71Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
72Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
73Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
74Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
75Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
76Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
77Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
78Atomic Layer Deposition of the Solid Electrolyte LiPON
79Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
80Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
81Atomic layer deposition of titanium nitride from TDMAT precursor
82Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
83Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
84Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
85Atomic layer epitaxy for quantum well nitride-based devices
86Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
87AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
88Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
89Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
90Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
91Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
92Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
93Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
94Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
95Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
96Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
97Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
98Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
99Characteristics of HfO2 thin films grown by plasma atomic layer deposition
100Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
101Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
102Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
103Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
104Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
105Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
106Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
107Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
108Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
109Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
110Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
111Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
112Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
113Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
114Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
115Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
116Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
117Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
118Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
119Comparative study of ALD SiO2 thin films for optical applications
120Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
121Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
122Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
123Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
124Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
125Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
126Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
127Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
128Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
129Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
130Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
131Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
132Composite materials and nanoporous thin layers made by atomic layer deposition
133Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
134Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
135Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
136Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
137Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
138Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
139Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
140Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
141Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
142Copper-ALD Seed Layer as an Enabler for Device Scaling
143Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
144Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
145Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
146Crystalline growth of AlN thin films by atomic layer deposition
147Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
148Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
149Damage evaluation in graphene underlying atomic layer deposition dielectrics
150DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
151Densification of Thin Aluminum Oxide Films by Thermal Treatments
152Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
153Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
154Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
155Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
156Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
157Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
158Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
159Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
160Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
161Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
162Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
163Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
164Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
165Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
166Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
167Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
168Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
169Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
170Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
171Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
172Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
173Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
174Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
175Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
176Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
177Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
178Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
179Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
180Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
181Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
182Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
183Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
184Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
185Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
186Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
187Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
188Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
189Electrical characteristics of β-Ga2O3 thin films grown by PEALD
190Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
191Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
192Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
193Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
194Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
195Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
196Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
197Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
198Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
199Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
200Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
201Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
202Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
203Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
204Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
205Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
206Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
207Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
208Evaluation of plasma parameters on PEALD deposited TaCN
209Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
210Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
211Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
212Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
213Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
214Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
215Fast PEALD ZnO Thin-Film Transistor Circuits
216Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
217Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
218Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
219Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
220Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
221Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
222Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
223Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
224Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
225Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
226GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
227Gadolinium nitride films deposited using a PEALD based process
228GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
229GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
230Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
231Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
232Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
233GeSbTe deposition for the PRAM application
234Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
235Graphene-based MMIC process development and RF passives design
236Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
237Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
238Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
239Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
240Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
241Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
242Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
243Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
244Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
245Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
246Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
247Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
248Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
249Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
250Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
251Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
252High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
253High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
254High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
255High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
256High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
257High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
258Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
259Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
260Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
261Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
262Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
263Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
264Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
265Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
266Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
267Hydrogen plasma-enhanced atomic layer deposition of copper thin films
268Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
269Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
270Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
271Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
272Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
273Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
274Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
275Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
276Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
277Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
278Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
279Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
280Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
281Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
282In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
283In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
284In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
285In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
286In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
287In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
288In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
289In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
290Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
291Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
292Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
293Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
294Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
295Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
296Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
297Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
298Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
299Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
300Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
301Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
302Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
303Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
304Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
305Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
306Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
307Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
308Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
309Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
310Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
311Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
312Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
313Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
314Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
315Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
316Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
317Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
318Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
319Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
320Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
321Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
322Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
323Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
324Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
325Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
326Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
327Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
328Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
329Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
330Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
331Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
332Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
333Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
334Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
335Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
336Low temperature plasma enhanced deposition of GaP films on Si substrate
337Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
338Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
339Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
340Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
341Low temperature temporal and spatial atomic layer deposition of TiO2 films
342Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
343Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
344Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
345Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
346Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
347Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
348Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
349Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
350Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
351Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
352Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
353Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
354Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
355Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
356Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
357Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
358Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
359Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
360Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
361Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
362Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
363Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
364Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
365Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
366Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
367Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
368Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
369Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
370Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
371Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
372Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
373Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
374Microwave properties of superconducting atomic-layer deposited TiN films
375Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
376Modal properties of a strip-loaded horizontal slot waveguide
377Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
378N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
379Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
380Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
381Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
382Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
383Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
384Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
385Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
386On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
387Optical and Electrical Properties of AlxTi1-xO Films
388Optical and Electrical Properties of TixSi1-xOy Films
389Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
390Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
391Optimization of the Surface Structure on Black Silicon for Surface Passivation
392Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
393Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
394Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
395Patterned deposition by plasma enhanced spatial atomic layer deposition
396PEALD AlN: controlling growth and film crystallinity
397PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
398PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
399PEALD of Copper using New Precursors for Next Generation of Interconnections
400PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
401PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
402Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
403Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
404Perspectives on future directions in III-N semiconductor research
405Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
406Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
407Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
408Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
409Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
410Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
411Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
412Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
413Plasma enhanced atomic layer deposition of aluminum sulfide thin films
414Plasma enhanced atomic layer deposition of Fe2O3 thin films
415Plasma enhanced atomic layer deposition of Ga2O3 thin films
416Plasma enhanced atomic layer deposition of gallium sulfide thin films
417Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
418Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
419Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
420Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
421Plasma enhanced atomic layer deposition of SiNx:H and SiO2
422Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
423Plasma enhanced atomic layer deposition of zinc sulfide thin films
424Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
425Plasma Enhanced Atomic Layer Deposition on Powders
426Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
427Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
428Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
429Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
430Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
431Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
432Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
433Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
434Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
435Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
436Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
437Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
438Plasma-Assisted Atomic Layer Deposition of Palladium
439Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
440Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
441Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
442Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
443Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
444Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
445Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
446Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
447Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
448Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
449Plasma-enhanced ALD system for SRF cavity
450Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
451Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
452Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
453Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
454Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
455Plasma-enhanced atomic layer deposition for plasmonic TiN
456Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
457Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
458Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
459Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
460Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
461Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
462Plasma-Enhanced Atomic Layer Deposition of Ni
463Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
464Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
465Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
466Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
467Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
468Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
469Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
470Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
471Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
472Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
473Plasma-enhanced atomic layer deposition of superconducting niobium nitride
474Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
475Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
476Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
477Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
478Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
479Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
480Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
481Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
482Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
483Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
484Plasma-enhanced atomic layer deposition of titanium vanadium nitride
485Plasma-enhanced atomic layer deposition of tungsten nitride
486Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
487Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
488Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
489Plasma-enhanced atomic layer deposition of zinc phosphate
490Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
491Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
492Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
493Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
494Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
495Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
496Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
497Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
498Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
499Properties of AlN grown by plasma enhanced atomic layer deposition
500Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
501Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
502Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
503Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
504Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
505Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
506Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
507Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
508Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
509Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
510Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
511Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
512Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
513Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
514Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
515Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
516Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
517Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
518Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
519Remote Plasma ALD of Platinum and Platinum Oxide Films
520Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
521Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
522Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
523Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
524Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
525Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
526Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
527Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
528Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
529Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
530Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
531Room temperature atomic layer deposition of TiO2 on gold nanoparticles
532Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
533Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
534Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
535Room-Temperature Atomic Layer Deposition of Platinum
536Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
537Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
538RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
539RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
540Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
541Ru thin film grown on TaN by plasma enhanced atomic layer deposition
542Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
543Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
544Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
545Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
546Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
547Self-Limiting Growth of GaN at Low Temperatures
548Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
549Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
550Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
551Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
552Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
553Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
554Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
555Spectroscopy and control of near-surface defects in conductive thin film ZnO
556Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
557Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
558Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
559Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
560Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
561Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
562Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
563Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
564Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
565Structural and optical characterization of low-temperature ALD crystalline AlN
566Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
567Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
568Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
569Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
570Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
571Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
572Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
573Study on the characteristics of aluminum thin films prepared by atomic layer deposition
574Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
575Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
576Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
577Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
578Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
579Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
580Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
581Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
582Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
583Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
584Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
585Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
586Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
587Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
588Symmetrical Al2O3-based passivation layers for p- and n-type silicon
589Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
590Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
591Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
592Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
593Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
594Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
595Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
596Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
597Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
598Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
599TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
600Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
601Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
602The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
603The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
604The effects of layering in ferroelectric Si-doped HfO2 thin films
605The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
606The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
607The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
608The important role of water in growth of monolayer transition metal dichalcogenides
609The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
610The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
611The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
612The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
613The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
614Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
615Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
616Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
617Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
618Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
619Thin film GaP for solar cell application
620Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
621Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
622TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
623TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
624Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
625Tribological properties of thin films made by atomic layer deposition sliding against silicon
626Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
627Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
628Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
629Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
630Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
631Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
632Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
633Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
634Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
635Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
636Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
637Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
638Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
639Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
640Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
641Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
642Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
643WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
644Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
645Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
646ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
647ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


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