Thickness Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
2A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
3A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
4A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
9A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
10A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
11A route to low temperature growth of single crystal GaN on sapphire
12Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
13Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
14Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
15Advances in the fabrication of graphene transistors on flexible substrates
16Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
17Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
18Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
19ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
20ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
21ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
22AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
23Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
24Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
25Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
26Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
27An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
28An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
29An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
30Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
31Analysis of nitrogen species in titanium oxynitride ALD films
32Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
33Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
34Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
35Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
36Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
37Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
38Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
39Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
40Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
41Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
42Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
43Atmospheric pressure plasma enhanced spatial ALD of silver
44Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
45Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
46Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
47Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
48Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
49Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
50Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
51Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
52Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
53Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
54Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
55Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
56Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
57Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
58Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
59Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
60Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
61Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
62Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
63Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
64Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
65Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
66Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
67Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
68Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
69Atomic layer deposition of GaN at low temperatures
70Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
71Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
72Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
73Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
74Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
75Atomic layer deposition of InN using trimethylindium and ammonia plasma
76Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
77Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
78Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
79Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
80Atomic Layer Deposition of Niobium Nitride from Different Precursors
81Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
82Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
83Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
84Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
85Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
86Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
87Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
88Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
89Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
90Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
91Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
92Atomic Layer Deposition of the Solid Electrolyte LiPON
93Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
94Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
95Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
96Atomic layer deposition of titanium nitride from TDMAT precursor
97Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
98Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
99Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
100Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
101Atomic layer epitaxy for quantum well nitride-based devices
102Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
103Atomic layer epitaxy of Si using atomic H
104Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
105AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
106Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
107Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
108Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
109Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
110Challenges in spacer process development for leading-edge high-k metal gate technology
111Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
112Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
113Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
114Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
115Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
116Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
117Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
118Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
119Characteristics of HfO2 thin films grown by plasma atomic layer deposition
120Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
121Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
122Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
123Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
124Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
125Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
126Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
127Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
128Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
129Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
130Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
131Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
132Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
133Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
134Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
135Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
136Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
137Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
138Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
139Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
140Comparative study of ALD SiO2 thin films for optical applications
141Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
142Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
143Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
144Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
145Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
146Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
147Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
148Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
149Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
150Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
151Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
152Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
153Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
154Composite materials and nanoporous thin layers made by atomic layer deposition
155Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
156Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
157Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
158Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
159Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
160Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
161Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
162Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
163Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
164Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
165Copper-ALD Seed Layer as an Enabler for Device Scaling
166Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
167Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
168Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
169Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
170Crystalline growth of AlN thin films by atomic layer deposition
171Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
172Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
173Damage evaluation in graphene underlying atomic layer deposition dielectrics
174DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
175Densification of Thin Aluminum Oxide Films by Thermal Treatments
176Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
177Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
178Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
179Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
180Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
181Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
182Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
183Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
184Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
185Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
186Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
187Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
188Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
189Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
190Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
191Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
192Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
193Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
194Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
195Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
196Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
197Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
198Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
199Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
200Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
201Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
202Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
203Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
204Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
205Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
206Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
207Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
208Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
209Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
210Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
211Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
212Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
213Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
214Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
215Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
216Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
217Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
218Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
219Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
220Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
221Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
222Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
223Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
224Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
225Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
226Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
227Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
228Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
229Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
230Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
231Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
232Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
233Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
234Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
235Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
236Evaluation of plasma parameters on PEALD deposited TaCN
237Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
238Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
239Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
240Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
241Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
242Fast PEALD ZnO Thin-Film Transistor Circuits
243Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
244Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
245Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
246Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
247Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
248Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
249Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
250Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
251Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
252Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
253Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
254Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
255GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
256Gadolinium nitride films deposited using a PEALD based process
257GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
258GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
259Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
260Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
261Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
262GeSbTe deposition for the PRAM application
263Graphene-based MMIC process development and RF passives design
264Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
265Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
266Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
267Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
268Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
269Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
270Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
271Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
272Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
273Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
274Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
275Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
276Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
277Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
278Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
279Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
280Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
281Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
282High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
283High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
284High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
285High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
286High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
287High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
288Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
289Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
290Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
291Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
292Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
293Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
294Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
295Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
296Hydrogen plasma-enhanced atomic layer deposition of copper thin films
297Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
298Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
299Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
300Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
301Impact of interface materials on side permeation in indirect encapsulation of organic electronics
302Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
303Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
304Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
305Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
306Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
307Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
308Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
309Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
310Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
311Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
312In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
313In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
314In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
315In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
316In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
317In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
318In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
319In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
320Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
321Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
322Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
323Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
324Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
325Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
326Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
327Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
328Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
329Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
330Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
331Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
332Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
333Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
334Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
335Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
336Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
337Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
338Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
339Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
340Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
341Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
342Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
343Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
344Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
345Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
346Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
347Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
348Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
349Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
350Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
351Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
352Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
353Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
354Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
355Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
356Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
357Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
358Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
359Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
360Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
361Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
362Layer-by-layer epitaxial growth of GaN at low temperatures
363Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
364Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
365Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
366Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
367Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
368Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
369Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
370Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
371Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
372Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
373Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
374Low temperature plasma enhanced deposition of GaP films on Si substrate
375Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
376Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
377Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
378Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
379Low temperature temporal and spatial atomic layer deposition of TiO2 films
380Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
381Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
382Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
383Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
384Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
385Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
386Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
387Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
388Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
389Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
390Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
391Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
392Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
393Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
394Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
395Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
396Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
397Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
398Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
399Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
400Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
401Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
402Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates
403Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
404Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
405Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
406Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
407Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
408Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
409Microwave properties of superconducting atomic-layer deposited TiN films
410Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
411Modal properties of a strip-loaded horizontal slot waveguide
412Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
413MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
414Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
415N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
416Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
417Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
418Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
419Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
420New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
421Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
422Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
423Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
424Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
425Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
426On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
427Optical and Electrical Properties of AlxTi1-xO Films
428Optical and Electrical Properties of TixSi1-xOy Films
429Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
430Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
431Optimization of the Surface Structure on Black Silicon for Surface Passivation
432Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
433Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
434Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
435Patterned deposition by plasma enhanced spatial atomic layer deposition
436PEALD AlN: controlling growth and film crystallinity
437PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
438PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
439PEALD of Copper using New Precursors for Next Generation of Interconnections
440PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
441PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
442PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
443Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
444Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
445Perspectives on future directions in III-N semiconductor research
446Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
447Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
448Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
449Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
450Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
451Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
452Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
453Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
454Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
455Plasma enhanced atomic layer deposition of aluminum sulfide thin films
456Plasma enhanced atomic layer deposition of Fe2O3 thin films
457Plasma enhanced atomic layer deposition of Ga2O3 thin films
458Plasma enhanced atomic layer deposition of gallium sulfide thin films
459Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
460Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
461Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
462Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
463Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
464Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
465Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
466Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
467Plasma enhanced atomic layer deposition of SiNx:H and SiO2
468Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
469Plasma enhanced atomic layer deposition of zinc sulfide thin films
470Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
471Plasma Enhanced Atomic Layer Deposition on Powders
472Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
473Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
474Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
475Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
476Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
477Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
478Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
479Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
480Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
481Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
482Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
483Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
484Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
485Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
486Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
487Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
488Plasma-Assisted Atomic Layer Deposition of Palladium
489Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
490Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
491Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
492Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
493Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
494Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
495Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
496Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
497Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
498Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
499Plasma-enhanced ALD system for SRF cavity
500Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
501Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
502Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
503Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
504Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
505Plasma-enhanced atomic layer deposition for plasmonic TiN
506Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
507Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
508Plasma-enhanced atomic layer deposition of BaTiO3
509Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
510Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
511Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
512Plasma-Enhanced Atomic Layer Deposition of Ni
513Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
514Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
515Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
516Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
517Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
518Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
519Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
520Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
521Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
522Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
523Plasma-enhanced atomic layer deposition of superconducting niobium nitride
524Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
525Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
526Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
527Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
528Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
529Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
530Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
531Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
532Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
533Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
534Plasma-enhanced atomic layer deposition of titanium vanadium nitride
535Plasma-enhanced atomic layer deposition of tungsten nitride
536Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
537Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
538Plasma-enhanced atomic layer deposition of vanadium nitride
539Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
540Plasma-enhanced atomic layer deposition of zinc phosphate
541Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
542Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
543Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
544Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
545Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
546Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
547Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
548Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
549Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
550Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
551Properties of AlN grown by plasma enhanced atomic layer deposition
552Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
553Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
554Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
555Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
556Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
557Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
558Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
559Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
560Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
561Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
562Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
563Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
564Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
565Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
566Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
567Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
568Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
569Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
570Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
571Remote Plasma ALD of Platinum and Platinum Oxide Films
572Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
573Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
574Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
575Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
576Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2
577Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
578Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
579Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
580Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
581Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
582Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
583Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
584Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
585Room temperature atomic layer deposition of TiO2 on gold nanoparticles
586Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
587Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
588Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
589Room-Temperature Atomic Layer Deposition of Platinum
590Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
591Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
592Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
593RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
594RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
595Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
596Ru thin film grown on TaN by plasma enhanced atomic layer deposition
597Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
598Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
599Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
600Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
601Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
602Self-Limiting Growth of GaN at Low Temperatures
603Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
604Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
605Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
606Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
607Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
608Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
609Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
610Spectroscopy and control of near-surface defects in conductive thin film ZnO
611Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
612Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
613Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
614Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
615Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
616Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
617Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
618Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
619Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
620Structural and optical characterization of low-temperature ALD crystalline AlN
621Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
622Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
623Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
624Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
625Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
626Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
627Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
628Study on the characteristics of aluminum thin films prepared by atomic layer deposition
629Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
630Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
631Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
632Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
633Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
634Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
635Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
636Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
637Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
638Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
639Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
640Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
641Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
642Symmetrical Al2O3-based passivation layers for p- and n-type silicon
643Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
644Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
645Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
646Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
647Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
648Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
649Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
650Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
651TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
652Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
653Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
654TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
655Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
656Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
657The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
658The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
659The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
660The effects of layering in ferroelectric Si-doped HfO2 thin films
661The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
662The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
663The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
664The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
665The important role of water in growth of monolayer transition metal dichalcogenides
666The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
667The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
668The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
669The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
670The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
671The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
672The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
673Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
674Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
675Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
676Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
677Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
678Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
679Thin film GaP for solar cell application
680Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
681Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
682TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
683TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
684Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
685Topographically selective deposition
686Tribological properties of thin films made by atomic layer deposition sliding against silicon
687Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
688Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
689Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
690Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
691Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
692Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
693Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
694Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
695Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
696Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
697Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
698Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
699Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
700Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
701Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
702Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
703Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
704Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
705Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
706Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
707WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
708Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
709Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
710XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
711ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
712ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
713ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium