| 1 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
| 2 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 3 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
| 4 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 5 | Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate |
| 6 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 7 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 8 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 9 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 10 | Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 11 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
| 12 | SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition |
| 13 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
| 14 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
| 15 | Plasma-Assisted Atomic Layer Deposition of Palladium |
| 16 | Layer-by-layer epitaxial growth of GaN at low temperatures |
| 17 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 18 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
| 19 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 20 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 21 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
| 22 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
| 23 | Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate |
| 24 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 25 | Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon |
| 26 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
| 27 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 28 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 29 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
| 30 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
| 31 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
| 32 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 33 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 34 | Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation |
| 35 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
| 36 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 37 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
| 38 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
| 39 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 40 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
| 41 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
| 42 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
| 43 | Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces |
| 44 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 45 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
| 46 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 47 | TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition |
| 48 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
| 49 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
| 50 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 51 | Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing |
| 52 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 53 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 54 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
| 55 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 56 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
| 57 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
| 58 | Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl |
| 59 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
| 60 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
| 61 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
| 62 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
| 63 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 64 | Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling |
| 65 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
| 66 | Atmospheric pressure plasma enhanced spatial ALD of silver |
| 67 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
| 68 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
| 69 | Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications |
| 70 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 71 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
| 72 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
| 73 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 74 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
| 75 | Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis |
| 76 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
| 77 | Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma |
| 78 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 79 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 80 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
| 81 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 82 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 83 | Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries |
| 84 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 85 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 86 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 87 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
| 88 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
| 89 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
| 90 | Texture of atomic layer deposited ruthenium |
| 91 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
| 92 | Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source |
| 93 | Plasma-enhanced atomic layer deposition of vanadium nitride |
| 94 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 95 | Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor |
| 96 | Atomic Layer Deposition of SiN for spacer applications in high-end logic devices |
| 97 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
| 98 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
| 99 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
| 100 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 101 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 102 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 103 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 104 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
| 105 | Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S |
| 106 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
| 107 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 108 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 109 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
| 110 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 111 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 112 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 113 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 114 | Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition |
| 115 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
| 116 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 117 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
| 118 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 119 | Atomic layer epitaxy of germanium |
| 120 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
| 121 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
| 122 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 123 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 124 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 125 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
| 126 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
| 127 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
| 128 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 129 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 130 | Spectroscopy and control of near-surface defects in conductive thin film ZnO |
| 131 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
| 132 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 133 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 134 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
| 135 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
| 136 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
| 137 | In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells |
| 138 | Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum |
| 139 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 140 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 141 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 142 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
| 143 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 144 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 145 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
| 146 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
| 147 | Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition |
| 148 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 149 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 150 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
| 151 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 152 | Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration |
| 153 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
| 154 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 155 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 156 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 157 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 158 | Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide |
| 159 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
| 160 | Innovative remote plasma source for atomic layer deposition for GaN devices |
| 161 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
| 162 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
| 163 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
| 164 | Atomic hydrogen-assisted ALE of germanium |
| 165 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
| 166 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 167 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 168 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 169 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
| 170 | Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces |
| 171 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
| 172 | A route to low temperature growth of single crystal GaN on sapphire |
| 173 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 174 | An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor |
| 175 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 176 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
| 177 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
| 178 | α-Ga2O3 grown by low temperature atomic layer deposition on sapphire |
| 179 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
| 180 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
| 181 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
| 182 | Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition |
| 183 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 184 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
| 185 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
| 186 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
| 187 | Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition |
| 188 | Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition |
| 189 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
| 190 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 191 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
| 192 | ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition |
| 193 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 194 | Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology |
| 195 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 196 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 197 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
| 198 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
| 199 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
| 200 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 201 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
| 202 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
| 203 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
| 204 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 205 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
| 206 | Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 207 | Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma |
| 208 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
| 209 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 210 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
| 211 | Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells |
| 212 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 213 | Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range |
| 214 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 215 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 216 | Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia |
| 217 | Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP) |
| 218 | Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors |
| 219 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
| 220 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
| 221 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 222 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 223 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
| 224 | Hysteresis behaviour of top-down fabricated ZnO nanowire transistors |
| 225 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
| 226 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
| 227 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
| 228 | Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology |
| 229 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
| 230 | Plasma Enhanced Atomic Layer Deposition on Powders |
| 231 | Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen |
| 232 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
| 233 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
| 234 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
| 235 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 236 | Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process |
| 237 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
| 238 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
| 239 | GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope |
| 240 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
| 241 | Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure |
| 242 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
| 243 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 244 | Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches |
| 245 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 246 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
| 247 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 248 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
| 249 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
| 250 | Self-Limiting Growth of GaN at Low Temperatures |
| 251 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 252 | Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis |
| 253 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
| 254 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
| 255 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
| 256 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 257 | Plasma-enhanced atomic layer deposition of zinc phosphate |
| 258 | Plasma-Enhanced Atomic Layer Deposition of Ni |
| 259 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 260 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
| 261 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
| 262 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 263 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
| 264 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
| 265 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| 266 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 267 | Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources |
| 268 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 269 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
| 270 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
| 271 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 272 | Plasma-enhanced atomic layer deposition for plasmonic TiN |
| 273 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 274 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
| 275 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
| 276 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
| 277 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 278 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 279 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 280 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
| 281 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 282 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
| 283 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 284 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 285 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 286 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 287 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 288 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 289 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 290 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
| 291 | Optical and Electrical Properties of TixSi1-xOy Films |
| 292 | Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells |
| 293 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
| 294 | GeSbTe deposition for the PRAM application |
| 295 | Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs |
| 296 | Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition |
| 297 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 298 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
| 299 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
| 300 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 301 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 302 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 303 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
| 304 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
| 305 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 306 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 307 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
| 308 | Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films |
| 309 | Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications |
| 310 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 311 | Plasma-enhanced ALD system for SRF cavity |
| 312 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 313 | Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition |
| 314 | Large-Scale Deposition and Growth Mechanism of Silver Nanoparticles by Plasma-Enhanced Atomic Layer Deposition |
| 315 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 316 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 317 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 318 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 319 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 320 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| 321 | Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition |
| 322 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
| 323 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 324 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
| 325 | Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition |
| 326 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
| 327 | Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas |
| 328 | Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD |
| 329 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 330 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
| 331 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 332 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 333 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
| 334 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 335 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
| 336 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
| 337 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 338 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 339 | Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition |
| 340 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
| 341 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 342 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
| 343 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
| 344 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
| 345 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
| 346 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 347 | Optical and Electrical Properties of AlxTi1-xO Films |
| 348 | Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma |
| 349 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
| 350 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
| 351 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 352 | Plasma enhanced atomic layer deposition of zinc sulfide thin films |
| 353 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 354 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
| 355 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
| 356 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 357 | Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment |
| 358 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
| 359 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
| 360 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
| 361 | Low temperature plasma enhanced deposition of GaP films on Si substrate |
| 362 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 363 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
| 364 | Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes |
| 365 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 366 | High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane |
| 367 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 368 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
| 369 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
| 370 | Atomic layer deposition of YMnO3 thin films |
| 371 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 372 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
| 373 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
| 374 | Plasma enhanced atomic layer deposition of gallium sulfide thin films |
| 375 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 376 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 377 | Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN |
| 378 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
| 379 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
| 380 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 381 | Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition |
| 382 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 383 | Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer |
| 384 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
| 385 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 386 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 387 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
| 388 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
| 389 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 390 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
| 391 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
| 392 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
| 393 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
| 394 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
| 395 | Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study |
| 396 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 397 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
| 398 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 399 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 400 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 401 | Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature |
| 402 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 403 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 404 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
| 405 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 406 | Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells |
| 407 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
| 408 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 409 | Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source |
| 410 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
| 411 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 412 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 413 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 414 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 415 | Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices |
| 416 | RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor |
| 417 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
| 418 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 419 | Room temperature atomic layer deposition of TiO2 on gold nanoparticles |
| 420 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
| 421 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
| 422 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
| 423 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
| 424 | Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition |
| 425 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 426 | Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon |
| 427 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
| 428 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
| 429 | Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2 |
| 430 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 431 | Atomic layer epitaxy of Si using atomic H |
| 432 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
| 433 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
| 434 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
| 435 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
| 436 | Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition |
| 437 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 438 | Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 439 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 440 | The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films |
| 441 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
| 442 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
| 443 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 444 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 445 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 446 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 447 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
| 448 | Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition |
| 449 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 450 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
| 451 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
| 452 | Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon |
| 453 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
| 454 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
| 455 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 456 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
| 457 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 458 | Topographically selective deposition |
| 459 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 460 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
| 461 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 462 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
| 463 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
| 464 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 465 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
| 466 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 467 | Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition |
| 468 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 469 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
| 470 | Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films |
| 471 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 472 | Challenges in spacer process development for leading-edge high-k metal gate technology |
| 473 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
| 474 | Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition |
| 475 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
| 476 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
| 477 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 478 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 479 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
| 480 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
| 481 | Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control |
| 482 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
| 483 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
| 484 | Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide |
| 485 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
| 486 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 487 | Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates |
| 488 | Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx |
| 489 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 490 | Modal properties of a strip-loaded horizontal slot waveguide |
| 491 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 492 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 493 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
| 494 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
| 495 | Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor |
| 496 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
| 497 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 498 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
| 499 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 500 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 501 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 502 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
| 503 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 504 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
| 505 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 506 | Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition |
| 507 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
| 508 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
| 509 | Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells |
| 510 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
| 511 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
| 512 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 513 | Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films |
| 514 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
| 515 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
| 516 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
| 517 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
| 518 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
| 519 | Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition |
| 520 | Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers |
| 521 | In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications |
| 522 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
| 523 | Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires |
| 524 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
| 525 | PEALD AlN: controlling growth and film crystallinity |
| 526 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
| 527 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
| 528 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 529 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
| 530 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 531 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 532 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
| 533 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
| 534 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
| 535 | Gadolinium nitride films deposited using a PEALD based process |
| 536 | Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films |
| 537 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
| 538 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
| 539 | Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries |
| 540 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 541 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
| 542 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 543 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
| 544 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
| 545 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
| 546 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
| 547 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 548 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 549 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 550 | Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment |
| 551 | Electron-enhanced atomic layer deposition of silicon thin films at room temperature |
| 552 | Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy |
| 553 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
| 554 | Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition |
| 555 | Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition |
| 556 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
| 557 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 558 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 559 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 560 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
| 561 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
| 562 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 563 | Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia |
| 564 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 565 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
| 566 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 567 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
| 568 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 569 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
| 570 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 571 | Atomic layer deposition of GaN at low temperatures |
| 572 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 573 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 574 | Thin film GaP for solar cell application |
| 575 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
| 576 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
| 577 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 578 | Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution |
| 579 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
| 580 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
| 581 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 582 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
| 583 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
| 584 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 585 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 586 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
| 587 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 588 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 589 | Atomic layer controlled deposition of silicon nitride with self-limiting mechanism |
| 590 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
| 591 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
| 592 | Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation |
| 593 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 594 | Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas |
| 595 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
| 596 | Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing |
| 597 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
| 598 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
| 599 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
| 600 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 601 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 602 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
| 603 | Controlling transition metal atomic ordering in two-dimensional Mo1-xWxS2 alloys |
| 604 | Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature |
| 605 | Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach |
| 606 | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide |
| 607 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
| 608 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
| 609 | Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier |
| 610 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
| 611 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 612 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 613 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
| 614 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
| 615 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 616 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 617 | Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries |
| 618 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
| 619 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 620 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 621 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 622 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
| 623 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
| 624 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
| 625 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
| 626 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
| 627 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
| 628 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 629 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
| 630 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 631 | New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell |
| 632 | Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor |
| 633 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 634 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
| 635 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 636 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
| 637 | Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition |
| 638 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 639 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 640 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
| 641 | The important role of water in growth of monolayer transition metal dichalcogenides |
| 642 | Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium |
| 643 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 644 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 645 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 646 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |
| 647 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 648 | Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier |
| 649 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
| 650 | Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma |
| 651 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 652 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 653 | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| 654 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 655 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
| 656 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization |
| 657 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
| 658 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 659 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 660 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 661 | Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET |
| 662 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
| 663 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
| 664 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
| 665 | Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns |
| 666 | Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition |
| 667 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
| 668 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 669 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
| 670 | Perspectives on future directions in III-N semiconductor research |
| 671 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 672 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
| 673 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
| 674 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
| 675 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
| 676 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
| 677 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
| 678 | Carbon content control of silicon oxycarbide film with methane containing plasma |
| 679 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 680 | Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition |
| 681 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
| 682 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 683 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
| 684 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 685 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 686 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 687 | Gallium nitride thin films by microwave plasma-assisted ALD |
| 688 | Graphene-based MMIC process development and RF passives design |
| 689 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
| 690 | Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO |
| 691 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 692 | Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering |
| 693 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
| 694 | A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition |
| 695 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
| 696 | Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection |
| 697 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 698 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
| 699 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
| 700 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 701 | Sub-nanometer heating depth of atomic layer annealing |
| 702 | In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition |
| 703 | Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition |
| 704 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 705 | Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy |
| 706 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 707 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
| 708 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 709 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
| 710 | Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries |
| 711 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 712 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
| 713 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
| 714 | Experimental and theoretical determination of the role of ions in atomic layer annealing |
| 715 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 716 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
| 717 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 718 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
| 719 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 720 | Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition |
| 721 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 722 | Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone |
| 723 | Plasma enhanced atomic layer deposition of Fe2O3 thin films |
| 724 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
| 725 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 726 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
| 727 | Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma |
| 728 | Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 |
| 729 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 730 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
| 731 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 732 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 733 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 734 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 735 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
| 736 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 737 | Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds |
| 738 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
| 739 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
| 740 | Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries |
| 741 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 742 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
| 743 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
| 744 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 745 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
| 746 | Evaluation of plasma parameters on PEALD deposited TaCN |
| 747 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 748 | A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application |
| 749 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
| 750 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 751 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 752 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 753 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
| 754 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
| 755 | Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers |
| 756 | Fast PEALD ZnO Thin-Film Transistor Circuits |
| 757 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 758 | Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition |
| 759 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 760 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 761 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
| 762 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
| 763 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
| 764 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
| 765 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 766 | Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3 |
| 767 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 768 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 769 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 770 | Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition |
| 771 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 772 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 773 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
| 774 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
| 775 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
| 776 | Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating |
| 777 | Crystalline growth of AlN thin films by atomic layer deposition |
| 778 | Atomic layer epitaxy for quantum well nitride-based devices |
| 779 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
| 780 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 781 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 782 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 783 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
| 784 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 785 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
| 786 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
| 787 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
| 788 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
| 789 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
| 790 | In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition |
| 791 | Self-limiting diamond growth from alternating CFx and H fluxes |
| 792 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
| 793 | Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition |
| 794 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
| 795 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 796 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 797 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 798 | Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting |
| 799 | Comparative study of ALD SiO2 thin films for optical applications |
| 800 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 801 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
| 802 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 803 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 804 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 805 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 806 | Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer |
| 807 | Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches |
| 808 | Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films |
| 809 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
| 810 | Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma |
| 811 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
| 812 | Advances in the fabrication of graphene transistors on flexible substrates |
| 813 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
| 814 | High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD |
| 815 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 816 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
| 817 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 818 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 819 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
| 820 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
| 821 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
| 822 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 823 | Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity |
| 824 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 825 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 826 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
| 827 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 828 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
| 829 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
| 830 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
| 831 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
| 832 | Room-Temperature Atomic Layer Deposition of Platinum |
| 833 | Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance |
| 834 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
| 835 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 836 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
| 837 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 838 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
| 839 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 840 | Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl |
| 841 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 842 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 843 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
| 844 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 845 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
| 846 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
| 847 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 848 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
| 849 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
| 850 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 851 | Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate |
| 852 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
| 853 | Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers |
| 854 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 855 | Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth |
| 856 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
| 857 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
| 858 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
| 859 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
| 860 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
| 861 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
| 862 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
| 863 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 864 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 865 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
| 866 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
| 867 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
| 868 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
| 869 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 870 | Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma |
| 871 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 872 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
