Thickness Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Thickness returned 839 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
13D structure evolution using metastable atomic layer deposition based on planar silver templates
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
6A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
8A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
9A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
10A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
11A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
12A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
13A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
14A route to low temperature growth of single crystal GaN on sapphire
15Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
16Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
17Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
18Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
19Advances in the fabrication of graphene transistors on flexible substrates
20Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
21Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
22Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
23ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
24ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
25ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
26AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
27AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
28Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
29Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
30Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
31Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
32Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
33Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
34Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
35An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
36An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
37An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
38Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
39Analysis of nitrogen species in titanium oxynitride ALD films
40Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
41Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
42Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
43Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
44Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
45Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
46Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
47Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
48Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
49Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
50Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
51Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
52Atmospheric pressure plasma enhanced spatial ALD of silver
53Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
54Atomic hydrogen-assisted ALE of germanium
55Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
56Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
57Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
58Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
59Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
60Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
61Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
62Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
63Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
64Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
65Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
66Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features
67Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
68Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
69Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
70Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
71Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
72Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
73Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
74Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
75Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
76Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
77Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
78Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
79Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
80Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
81Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
82Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
83Atomic layer deposition of GaN at low temperatures
84Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
85Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
86Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
87Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
88Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
89Atomic layer deposition of InN using trimethylindium and ammonia plasma
90Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
91Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
92Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma
93Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
94Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
95Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity
96Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
97Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries
98Atomic Layer Deposition of Niobium Nitride from Different Precursors
99Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
100Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
101Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
102Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
103Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
104Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
105Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
106Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
107Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
108Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
109Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
110Atomic Layer Deposition of the Solid Electrolyte LiPON
111Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
112Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
113Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
114Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
115Atomic layer deposition of titanium nitride from TDMAT precursor
116Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
117Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
118Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
119Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
120Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
121Atomic layer deposition of YMnO3 thin films
122Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
123Atomic layer epitaxy for quantum well nitride-based devices
124Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
125Atomic layer epitaxy of germanium
126Atomic layer epitaxy of Si using atomic H
127Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis
128Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
129AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
130Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
131Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
132Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
133Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
134Carbon content control of silicon oxycarbide film with methane containing plasma
135Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
136Challenges in spacer process development for leading-edge high-k metal gate technology
137Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
138Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
139Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
140Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
141Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
142Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
143Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
144Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
145Characteristics of HfO2 thin films grown by plasma atomic layer deposition
146Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
147Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
148Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
149Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
150Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
151Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
152Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
153Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
154Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
155Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
156Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
157Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
158Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
159Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
160Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
161Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
162Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
163Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
164Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
165Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
166Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
167Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
168Comparative study of ALD SiO2 thin films for optical applications
169Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
170Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
171Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
172Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
173Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
174Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
175Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
176Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
177Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
178Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
179Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
180Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
181Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
182Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
183Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
184Composite materials and nanoporous thin layers made by atomic layer deposition
185Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
186Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
187Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
188Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
189Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
190Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
191Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
192Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
193Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
194Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
195Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
196Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
197Copper-ALD Seed Layer as an Enabler for Device Scaling
198Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
199Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
200Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
201Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
202Crystalline growth of AlN thin films by atomic layer deposition
203Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
204Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
205Damage evaluation in graphene underlying atomic layer deposition dielectrics
206DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
207Densification of Thin Aluminum Oxide Films by Thermal Treatments
208Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers
209Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
210Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
211Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
212Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
213Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
214Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
215Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
216Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
217Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
218Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
219Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon
220Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
221Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
222Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
223Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
224Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
225Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
226Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
227Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
228Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
229Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
230Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
231Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
232Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
233Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
234Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition
235Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
236Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
237Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
238Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
239Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
240Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
241Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
242Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
243Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
244Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
245Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
246Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
247Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
248Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
249Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
250Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
251Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
252Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
253Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
254Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
255Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
256Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
257Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
258Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
259Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
260Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
261Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
262Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
263Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
264Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation
265Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition
266Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
267Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
268Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
269Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
270Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
271Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
272Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
273Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
274Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
275Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
276Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
277Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
278Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
279Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
280Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
281Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
282Evaluation of plasma parameters on PEALD deposited TaCN
283Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
284Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
285Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
286Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
287Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
288Fast PEALD ZnO Thin-Film Transistor Circuits
289Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
290Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
291Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
292Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
293Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
294Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
295Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
296Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
297Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
298Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
299Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
300Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
301GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
302Gadolinium nitride films deposited using a PEALD based process
303GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
304GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
305Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
306Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
307Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
308GeSbTe deposition for the PRAM application
309Graphene-based MMIC process development and RF passives design
310Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
311Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
312Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
313Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
314Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
315Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
316Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
317Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
318Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
319Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
320Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
321Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
322Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
323Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
324Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
325Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting
326Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
327Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
328Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
329Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
330Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
331HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition
332High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
333High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
334High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
335High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
336High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
337High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
338Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
339Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
340Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
341Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
342Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
343Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
344Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
345Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
346Hydrogen plasma-enhanced atomic layer deposition of copper thin films
347Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
348Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
349Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
350Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
351Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition
352Impact of interface materials on side permeation in indirect encapsulation of organic electronics
353Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
354Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
355Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
356Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
357Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
358Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
359Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
360Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
361Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
362Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
363Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
364Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
365In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
366In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
367In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
368In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
369In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
370In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
371In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
372In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
373In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
374In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
375In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
376In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
377Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
378Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
379Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
380Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
381Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
382Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
383Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
384Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
385Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
386Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
387Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
388Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
389Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition
390Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
391Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
392Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
393Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
394Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
395Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
396Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
397Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
398Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
399Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
400Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
401Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
402Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
403Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
404Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
405Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
406Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
407Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
408Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
409Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
410Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
411Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
412Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
413Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
414Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
415Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
416Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
417Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
418Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
419Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
420Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
421Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
422Layer-by-layer epitaxial growth of GaN at low temperatures
423Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
424Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
425Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
426Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
427Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
428Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
429Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
430Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
431Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
432Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
433Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
434Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
435Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
436Low temperature plasma enhanced deposition of GaP films on Si substrate
437Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
438Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
439Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
440Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
441Low temperature temporal and spatial atomic layer deposition of TiO2 films
442Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
443Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
444Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
445Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
446Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
447Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
448Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
449Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
450Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
451Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
452Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
453Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications
454Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
455Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
456Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
457Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
458Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
459Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
460Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
461Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
462Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
463Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
464Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
465Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
466Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
467Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
468Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates
469Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
470Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
471Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
472Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
473Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
474Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
475Microwave properties of superconducting atomic-layer deposited TiN films
476Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
477Modal properties of a strip-loaded horizontal slot waveguide
478Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
479Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
480MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
481Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
482Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
483N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
484Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
485Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
486Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
487Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
488New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
489Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
490Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
491Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
492Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
493Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
494Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
495On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
496Optical and Electrical Properties of AlxTi1-xO Films
497Optical and Electrical Properties of TixSi1-xOy Films
498Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
499Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
500Optimization of the Surface Structure on Black Silicon for Surface Passivation
501Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
502Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
503Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
504Patterned deposition by plasma enhanced spatial atomic layer deposition
505PEALD AlN: controlling growth and film crystallinity
506PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
507PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
508PEALD of Copper using New Precursors for Next Generation of Interconnections
509PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
510PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
511PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
512Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
513Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
514Perspectives on future directions in III-N semiconductor research
515Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
516Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
517Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
518Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
519Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
520Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
521Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
522Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
523Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
524Plasma enhanced atomic layer deposition of aluminum sulfide thin films
525Plasma enhanced atomic layer deposition of Fe2O3 thin films
526Plasma enhanced atomic layer deposition of Ga2O3 thin films
527Plasma enhanced atomic layer deposition of gallium sulfide thin films
528Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
529Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
530Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
531Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
532Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
533Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
534Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
535Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
536Plasma enhanced atomic layer deposition of SiNx:H and SiO2
537Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
538Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
539Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
540Plasma enhanced atomic layer deposition of zinc sulfide thin films
541Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
542Plasma Enhanced Atomic Layer Deposition on Powders
543Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
544Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
545Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
546Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
547Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
548Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
549Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
550Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
551Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
552Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
553Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
554Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
555Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
556Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
557Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
558Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
559Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
560Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
561Plasma-Assisted Atomic Layer Deposition of Palladium
562Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
563Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
564Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
565Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
566Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
567Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
568Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
569Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
570Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
571Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
572Plasma-enhanced ALD system for SRF cavity
573Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
574Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
575Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
576Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
577Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
578Plasma-enhanced atomic layer deposition for plasmonic TiN
579Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
580Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
581Plasma-enhanced atomic layer deposition of BaTiO3
582Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
583Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
584Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
585Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
586Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
587Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
588Plasma-Enhanced Atomic Layer Deposition of Ni
589Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
590Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
591Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
592Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
593Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
594Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
595Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
596Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
597Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
598Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
599Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
600Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
601Plasma-enhanced atomic layer deposition of superconducting niobium nitride
602Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
603Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
604Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
605Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
606Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
607Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
608Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
609Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
610Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
611Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
612Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
613Plasma-enhanced atomic layer deposition of titanium vanadium nitride
614Plasma-enhanced atomic layer deposition of tungsten nitride
615Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
616Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
617Plasma-enhanced atomic layer deposition of vanadium nitride
618Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
619Plasma-enhanced atomic layer deposition of zinc phosphate
620Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
621Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
622Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
623Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
624Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
625Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
626Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
627Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
628Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
629Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
630Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
631Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
632Properties of AlN grown by plasma enhanced atomic layer deposition
633Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
634Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
635Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
636Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
637Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
638Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
639Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
640Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
641Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
642Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
643Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
644Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
645Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
646Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
647Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
648Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
649Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
650Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
651Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
652Remote Plasma ALD of Platinum and Platinum Oxide Films
653Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
654Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
655Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
656Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
657Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
658Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
659Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2
660Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
661Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
662Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
663Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
664Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
665Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
666Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
667Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
668Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
669Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
670Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
671Room temperature atomic layer deposition of TiO2 on gold nanoparticles
672Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
673Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
674Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
675Room-Temperature Atomic Layer Deposition of Platinum
676Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
677Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
678Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
679RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
680RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
681Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
682Ru thin film grown on TaN by plasma enhanced atomic layer deposition
683Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
684Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
685Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
686Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
687Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
688Self-Limiting Growth of GaN at Low Temperatures
689Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
690Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
691SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
692Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
693Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
694Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
695Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
696Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
697Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
698Spectroscopy and control of near-surface defects in conductive thin film ZnO
699Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
700Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
701Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
702Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
703Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
704Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
705Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
706Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
707Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
708Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
709Structural and optical characterization of low-temperature ALD crystalline AlN
710Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
711Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
712Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
713Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
714Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
715Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
716Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
717Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
718Study on the characteristics of aluminum thin films prepared by atomic layer deposition
719Sub-7-nm textured ZrO2 with giant ferroelectricity
720Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
721Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
722Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
723Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
724Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
725Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
726Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
727Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
728Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
729Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
730Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
731Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
732Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
733Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
734Symmetrical Al2O3-based passivation layers for p- and n-type silicon
735Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
736Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
737Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
738Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
739Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
740Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
741Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
742Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
743Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
744TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
745Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
746Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
747TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
748Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
749Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
750Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
751Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
752The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
753The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
754The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
755The effects of layering in ferroelectric Si-doped HfO2 thin films
756The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
757The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
758The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
759The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
760The important role of water in growth of monolayer transition metal dichalcogenides
761The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
762The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
763The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
764The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
765The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
766The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
767The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
768Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
769Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
770Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
771Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
772Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition
773Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
774Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
775Thin film GaP for solar cell application
776Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
777Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
778TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
779Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
780TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
781Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
782Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
783Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches
784Topographically selective deposition
785Tribological properties of thin films made by atomic layer deposition sliding against silicon
786Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
787Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
788Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
789Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
790Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
791Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
792Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
793Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
794Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
795Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
796Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
797Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
798Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
799Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
800Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
801Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
802Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
803Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
804Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
805Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
806Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
807Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
808Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
809Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
810WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
811Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
812Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
813XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
814XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
815ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
816ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window"
817ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
818ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
819α-Ga2O3 grown by low temperature atomic layer deposition on sapphire