Thickness Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
2A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
3A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
4A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
5A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
6A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
7A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
8A route to low temperature growth of single crystal GaN on sapphire
9Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
10Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
11Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
12Advances in the fabrication of graphene transistors on flexible substrates
13Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
14Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
15Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
16ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
17ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
18ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
19Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
20Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
21Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
22Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
23An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
24An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
25An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
26Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
27Analysis of nitrogen species in titanium oxynitride ALD films
28Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
29Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
30Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
31Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
32Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
33Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
34Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
35Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
36Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
37Atmospheric pressure plasma enhanced spatial ALD of silver
38Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
39Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
40Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
41Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
42Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
43Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
44Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
45Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
46Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
47Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
48Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
49Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
50Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
51Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
52Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
53Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
54Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
55Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
56Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
57Atomic layer deposition of GaN at low temperatures
58Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
59Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
60Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
61Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
62Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
63Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
64Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
65Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
66Atomic Layer Deposition of Niobium Nitride from Different Precursors
67Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
68Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
69Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
70Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
71Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
72Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
73Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
74Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
75Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
76Atomic Layer Deposition of the Solid Electrolyte LiPON
77Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
78Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
79Atomic layer deposition of titanium nitride from TDMAT precursor
80Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
81Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
82Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
83Atomic layer epitaxy for quantum well nitride-based devices
84Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
85AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
86Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
87Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
88Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
89Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
90Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
91Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
92Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
93Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
94Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
95Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
96Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
97Characteristics of HfO2 thin films grown by plasma atomic layer deposition
98Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
99Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
100Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
101Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
102Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
103Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
104Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
105Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
106Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
107Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
108Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
109Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
110Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
111Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
112Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
113Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
114Comparative study of ALD SiO2 thin films for optical applications
115Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
116Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
117Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
118Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
119Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
120Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
121Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
122Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
123Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
124Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
125Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
126Composite materials and nanoporous thin layers made by atomic layer deposition
127Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
128Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
129Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
130Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
131Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
132Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
133Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
134Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
135Copper-ALD Seed Layer as an Enabler for Device Scaling
136Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
137Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
138Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
139Crystalline growth of AlN thin films by atomic layer deposition
140Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
141Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
142Damage evaluation in graphene underlying atomic layer deposition dielectrics
143DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
144Densification of Thin Aluminum Oxide Films by Thermal Treatments
145Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
146Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
147Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
148Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
149Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
150Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
151Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
152Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
153Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
154Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
155Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
156Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
157Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
158Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
159Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
160Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
161Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
162Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
163Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
164Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
165Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
166Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
167Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
168Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
169Electrical characteristics of β-Ga2O3 thin films grown by PEALD
170Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
171Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
172Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
173Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
174Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
175Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
176Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
177Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
178Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
179Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
180Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
181Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
182Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
183Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
184Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
185Evaluation of plasma parameters on PEALD deposited TaCN
186Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
187Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
188Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
189Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
190Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
191Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
192Fast PEALD ZnO Thin-Film Transistor Circuits
193Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
194Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
195Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
196Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
197Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
198Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
199Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
200Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
201Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
202Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
203GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
204Gadolinium nitride films deposited using a PEALD based process
205GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
206GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
207Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
208Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
209Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
210Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
211Graphene-based MMIC process development and RF passives design
212Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
213Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
214Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
215Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
216Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
217Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
218Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
219Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
220Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
221Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
222Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
223Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
224Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
225High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
226High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
227High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
228High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
229High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
230Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
231Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
232Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
233Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
234Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
235Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
236Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
237Hydrogen plasma-enhanced atomic layer deposition of copper thin films
238Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
239Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
240Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
241Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
242Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
243Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
244Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
245Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
246Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
247Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
248In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
249In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
250In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
251In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
252In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
253Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
254Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
255Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
256Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
257Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
258Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
259Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
260Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
261Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
262Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
263Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
264Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
265Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
266Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
267Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
268Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
269Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
270Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
271Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
272Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
273Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
274Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
275Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
276Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
277Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
278Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
279Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
280Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
281Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
282Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
283Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
284Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
285Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
286Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
287Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
288Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
289Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
290Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
291Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
292Low temperature plasma enhanced deposition of GaP films on Si substrate
293Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
294Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
295Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
296Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
297Low temperature temporal and spatial atomic layer deposition of TiO2 films
298Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
299Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
300Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
301Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
302Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
303Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
304Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
305Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
306Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
307Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
308Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
309Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
310Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
311Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
312Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
313Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
314Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
315Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
316Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
317Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
318Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
319Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
320Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
321Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
322Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
323Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
324Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
325Microwave properties of superconducting atomic-layer deposited TiN films
326Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
327Modal properties of a strip-loaded horizontal slot waveguide
328Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
329N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
330Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
331Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
332Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
333Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
334Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
335Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
336On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
337Optical and Electrical Properties of AlxTi1-xO Films
338Optical and Electrical Properties of TixSi1-xOy Films
339Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
340Optimization of the Surface Structure on Black Silicon for Surface Passivation
341Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
342Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
343Patterned deposition by plasma enhanced spatial atomic layer deposition
344PEALD AlN: controlling growth and film crystallinity
345PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
346PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
347PEALD of Copper using New Precursors for Next Generation of Interconnections
348PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
349PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
350Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
351Perspectives on future directions in III-N semiconductor research
352Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
353Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
354Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
355Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
356Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
357Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
358Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
359Plasma enhanced atomic layer deposition of aluminum sulfide thin films
360Plasma enhanced atomic layer deposition of Fe2O3 thin films
361Plasma enhanced atomic layer deposition of Ga2O3 thin films
362Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
363Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
364Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
365Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
366Plasma enhanced atomic layer deposition of SiNx:H and SiO2
367Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
368Plasma enhanced atomic layer deposition of zinc sulfide thin films
369Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
370Plasma Enhanced Atomic Layer Deposition on Powders
371Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
372Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
373Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
374Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
375Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
376Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
377Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
378Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
379Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
380Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
381Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
382Plasma-Assisted Atomic Layer Deposition of Palladium
383Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
384Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
385Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
386Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
387Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
388Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
389Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
390Plasma-enhanced ALD system for SRF cavity
391Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
392Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
393Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
394Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
395Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
396Plasma-enhanced atomic layer deposition for plasmonic TiN
397Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
398Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
399Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
400Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
401Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
402Plasma-Enhanced Atomic Layer Deposition of Ni
403Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
404Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
405Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
406Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
407Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
408Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
409Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
410Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
411Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
412Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
413Plasma-enhanced atomic layer deposition of superconducting niobium nitride
414Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
415Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
416Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
417Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
418Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
419Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
420Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
421Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
422Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
423Plasma-enhanced atomic layer deposition of titanium vanadium nitride
424Plasma-enhanced atomic layer deposition of tungsten nitride
425Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
426Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
427Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
428Plasma-enhanced atomic layer deposition of zinc phosphate
429Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
430Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
431Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
432Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
433Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
434Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
435Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
436Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
437Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
438Properties of AlN grown by plasma enhanced atomic layer deposition
439Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
440Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
441Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
442Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
443Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
444Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
445Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
446Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
447Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
448Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
449Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
450Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
451Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
452Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
453Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
454Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
455Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
456Remote Plasma ALD of Platinum and Platinum Oxide Films
457Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
458Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
459Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
460Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
461Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
462Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
463Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
464Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
465Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
466Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
467Room temperature atomic layer deposition of TiO2 on gold nanoparticles
468Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
469Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
470Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
471Room-Temperature Atomic Layer Deposition of Platinum
472Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
473Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
474RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
475RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
476Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
477Ru thin film grown on TaN by plasma enhanced atomic layer deposition
478Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
479Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
480Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
481Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
482Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
483Self-Limiting Growth of GaN at Low Temperatures
484Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
485Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
486Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
487Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
488Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
489Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
490Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
491Spectroscopy and control of near-surface defects in conductive thin film ZnO
492Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
493Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
494Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
495Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
496Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
497Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
498Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
499Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
500Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
501Structural and optical characterization of low-temperature ALD crystalline AlN
502Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
503Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
504Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
505Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
506Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
507Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
508Study on the characteristics of aluminum thin films prepared by atomic layer deposition
509Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
510Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
511Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
512Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
513Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
514Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
515Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
516Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
517Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
518Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
519Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
520Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
521Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
522Symmetrical Al2O3-based passivation layers for p- and n-type silicon
523Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
524Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
525Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
526Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
527Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
528Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
529Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
530Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
531TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
532Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
533Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
534The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
535The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
536The effects of layering in ferroelectric Si-doped HfO2 thin films
537The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
538The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
539The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
540The important role of water in growth of monolayer transition metal dichalcogenides
541The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
542The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
543The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
544The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
545The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
546Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
547Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
548Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
549Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
550Thin film GaP for solar cell application
551Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
552Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
553TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
554TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
555Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
556Tribological properties of thin films made by atomic layer deposition sliding against silicon
557Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
558Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
559Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
560Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
561Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
562Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
563Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
564Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
565Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
566Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
567Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
568Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
569Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
570Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
571Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
572Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
573Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
574WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
575Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
576Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
577ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
578ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


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