Thickness Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
13D structure evolution using metastable atomic layer deposition based on planar silver templates
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
6A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
8A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
9A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
10A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
11A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
12A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
13A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
14A route to low temperature growth of single crystal GaN on sapphire
15Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
16Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
17Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
18Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
19Advances in the fabrication of graphene transistors on flexible substrates
20Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
21Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
22Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
23ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
24ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
25ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
26AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
27AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
28Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
29Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
30Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
31Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
32Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
33Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
34An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
35An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
36An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
37Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
38Analysis of nitrogen species in titanium oxynitride ALD films
39Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
40Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
41Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
42Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
43Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
44Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
45Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
46Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
47Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
48Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
49Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
50Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
51Atmospheric pressure plasma enhanced spatial ALD of silver
52Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
53Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
54Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
55Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
56Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
57Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
58Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
59Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
60Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
61Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
62Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
63Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
64Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
65Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
66Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
67Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
68Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
69Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
70Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
71Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
72Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
73Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
74Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
75Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
76Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
77Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
78Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
79Atomic layer deposition of GaN at low temperatures
80Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
81Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
82Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
83Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
84Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
85Atomic layer deposition of InN using trimethylindium and ammonia plasma
86Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
87Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
88Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma
89Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
90Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
91Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
92Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries
93Atomic Layer Deposition of Niobium Nitride from Different Precursors
94Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
95Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
96Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
97Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
98Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
99Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
100Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
101Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
102Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
103Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
104Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
105Atomic Layer Deposition of the Solid Electrolyte LiPON
106Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
107Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
108Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
109Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
110Atomic layer deposition of titanium nitride from TDMAT precursor
111Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
112Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
113Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
114Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
115Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
116Atomic layer epitaxy for quantum well nitride-based devices
117Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
118Atomic layer epitaxy of Si using atomic H
119Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis
120Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
121AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
122Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
123Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
124Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
125Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
126Carbon content control of silicon oxycarbide film with methane containing plasma
127Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
128Challenges in spacer process development for leading-edge high-k metal gate technology
129Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
130Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
131Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
132Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
133Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
134Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
135Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
136Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
137Characteristics of HfO2 thin films grown by plasma atomic layer deposition
138Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
139Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
140Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
141Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
142Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
143Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
144Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
145Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
146Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
147Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
148Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
149Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
150Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
151Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
152Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
153Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
154Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
155Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
156Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
157Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
158Comparative study of ALD SiO2 thin films for optical applications
159Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
160Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
161Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
162Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
163Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
164Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
165Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
166Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
167Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
168Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
169Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
170Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
171Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
172Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
173Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
174Composite materials and nanoporous thin layers made by atomic layer deposition
175Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
176Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
177Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
178Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
179Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
180Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
181Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
182Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
183Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
184Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
185Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
186Copper-ALD Seed Layer as an Enabler for Device Scaling
187Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
188Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
189Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
190Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
191Crystalline growth of AlN thin films by atomic layer deposition
192Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
193Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
194Damage evaluation in graphene underlying atomic layer deposition dielectrics
195DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
196Densification of Thin Aluminum Oxide Films by Thermal Treatments
197Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
198Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
199Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
200Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
201Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
202Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
203Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
204Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
205Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
206Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
207Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
208Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
209Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
210Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
211Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
212Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
213Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
214Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
215Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
216Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
217Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
218Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
219Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
220Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
221Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
222Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
223Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
224Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
225Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
226Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
227Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
228Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
229Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
230Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
231Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
232Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
233Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
234Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
235Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
236Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
237Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
238Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
239Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
240Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
241Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
242Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
243Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
244Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
245Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition
246Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
247Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
248Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
249Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
250Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
251Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
252Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
253Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
254Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
255Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
256Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
257Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
258Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
259Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
260Evaluation of plasma parameters on PEALD deposited TaCN
261Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
262Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
263Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
264Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
265Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
266Fast PEALD ZnO Thin-Film Transistor Circuits
267Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
268Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
269Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
270Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
271Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
272Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
273Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
274Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
275Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
276Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
277Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
278Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
279GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
280Gadolinium nitride films deposited using a PEALD based process
281GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
282GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
283Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
284Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
285Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
286GeSbTe deposition for the PRAM application
287Graphene-based MMIC process development and RF passives design
288Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
289Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
290Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
291Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
292Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
293Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
294Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
295Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
296Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
297Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
298Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
299Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
300Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
301Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
302Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
303Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
304Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
305Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
306Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
307High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
308High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
309High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
310High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
311High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
312High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
313Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
314Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
315Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
316Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
317Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
318Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
319Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
320Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
321Hydrogen plasma-enhanced atomic layer deposition of copper thin films
322Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
323Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
324Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
325Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
326Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition
327Impact of interface materials on side permeation in indirect encapsulation of organic electronics
328Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
329Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
330Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
331Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
332Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
333Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
334Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
335Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
336Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
337Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
338Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
339Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
340In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
341In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
342In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
343In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
344In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
345In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
346In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
347In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
348In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
349In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
350In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
351In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
352Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
353Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
354Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
355Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
356Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
357Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
358Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
359Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
360Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
361Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
362Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
363Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
364Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition
365Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
366Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
367Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
368Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
369Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
370Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
371Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
372Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
373Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
374Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
375Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
376Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
377Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
378Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
379Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
380Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
381Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
382Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
383Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
384Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
385Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
386Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
387Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
388Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
389Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
390Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
391Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
392Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
393Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
394Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
395Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
396Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
397Layer-by-layer epitaxial growth of GaN at low temperatures
398Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
399Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
400Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
401Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
402Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
403Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
404Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
405Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
406Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
407Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
408Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
409Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
410Low temperature plasma enhanced deposition of GaP films on Si substrate
411Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
412Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
413Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
414Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
415Low temperature temporal and spatial atomic layer deposition of TiO2 films
416Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
417Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
418Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
419Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
420Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
421Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
422Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
423Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
424Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
425Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
426Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
427Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
428Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
429Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
430Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
431Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
432Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
433Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
434Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
435Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
436Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
437Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
438Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
439Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
440Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
441Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates
442Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
443Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
444Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
445Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
446Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
447Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
448Microwave properties of superconducting atomic-layer deposited TiN films
449Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
450Modal properties of a strip-loaded horizontal slot waveguide
451Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
452Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
453MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
454Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
455N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
456Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
457Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
458Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
459Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
460New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
461Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
462Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
463Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
464Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
465Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
466On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
467Optical and Electrical Properties of AlxTi1-xO Films
468Optical and Electrical Properties of TixSi1-xOy Films
469Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
470Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
471Optimization of the Surface Structure on Black Silicon for Surface Passivation
472Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
473Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
474Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
475Patterned deposition by plasma enhanced spatial atomic layer deposition
476PEALD AlN: controlling growth and film crystallinity
477PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
478PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
479PEALD of Copper using New Precursors for Next Generation of Interconnections
480PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
481PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
482PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
483Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
484Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
485Perspectives on future directions in III-N semiconductor research
486Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
487Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
488Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
489Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
490Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
491Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
492Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
493Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
494Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
495Plasma enhanced atomic layer deposition of aluminum sulfide thin films
496Plasma enhanced atomic layer deposition of Fe2O3 thin films
497Plasma enhanced atomic layer deposition of Ga2O3 thin films
498Plasma enhanced atomic layer deposition of gallium sulfide thin films
499Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
500Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
501Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
502Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
503Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
504Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
505Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
506Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
507Plasma enhanced atomic layer deposition of SiNx:H and SiO2
508Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
509Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
510Plasma enhanced atomic layer deposition of zinc sulfide thin films
511Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
512Plasma Enhanced Atomic Layer Deposition on Powders
513Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
514Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
515Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
516Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
517Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
518Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
519Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
520Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
521Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
522Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
523Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
524Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
525Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
526Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
527Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
528Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
529Plasma-Assisted Atomic Layer Deposition of Palladium
530Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
531Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
532Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
533Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
534Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
535Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
536Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
537Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
538Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
539Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
540Plasma-enhanced ALD system for SRF cavity
541Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
542Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
543Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
544Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
545Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
546Plasma-enhanced atomic layer deposition for plasmonic TiN
547Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
548Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
549Plasma-enhanced atomic layer deposition of BaTiO3
550Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
551Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
552Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
553Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
554Plasma-Enhanced Atomic Layer Deposition of Ni
555Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
556Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
557Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
558Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
559Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
560Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
561Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
562Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
563Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
564Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
565Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
566Plasma-enhanced atomic layer deposition of superconducting niobium nitride
567Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
568Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
569Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
570Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
571Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
572Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
573Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
574Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
575Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
576Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
577Plasma-enhanced atomic layer deposition of titanium vanadium nitride
578Plasma-enhanced atomic layer deposition of tungsten nitride
579Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
580Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
581Plasma-enhanced atomic layer deposition of vanadium nitride
582Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
583Plasma-enhanced atomic layer deposition of zinc phosphate
584Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
585Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
586Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
587Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
588Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
589Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
590Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
591Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
592Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
593Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
594Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
595Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
596Properties of AlN grown by plasma enhanced atomic layer deposition
597Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
598Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
599Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
600Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
601Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
602Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
603Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
604Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
605Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
606Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
607Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
608Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
609Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
610Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
611Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
612Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
613Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
614Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
615Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
616Remote Plasma ALD of Platinum and Platinum Oxide Films
617Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
618Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
619Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
620Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
621Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
622Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
623Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2
624Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
625Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
626Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
627Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
628Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
629Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
630Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
631Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
632Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
633Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
634Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
635Room temperature atomic layer deposition of TiO2 on gold nanoparticles
636Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
637Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
638Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
639Room-Temperature Atomic Layer Deposition of Platinum
640Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
641Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
642Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
643RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
644RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
645Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
646Ru thin film grown on TaN by plasma enhanced atomic layer deposition
647Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
648Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
649Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
650Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
651Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
652Self-Limiting Growth of GaN at Low Temperatures
653Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
654Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
655SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
656Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
657Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
658Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
659Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
660Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
661Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
662Spectroscopy and control of near-surface defects in conductive thin film ZnO
663Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
664Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
665Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
666Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
667Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
668Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
669Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
670Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
671Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
672Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
673Structural and optical characterization of low-temperature ALD crystalline AlN
674Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
675Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
676Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
677Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
678Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
679Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
680Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
681Study on the characteristics of aluminum thin films prepared by atomic layer deposition
682Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
683Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
684Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
685Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
686Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
687Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
688Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
689Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
690Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
691Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
692Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
693Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
694Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
695Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
696Symmetrical Al2O3-based passivation layers for p- and n-type silicon
697Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
698Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
699Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
700Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
701Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
702Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
703Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
704Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
705Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
706TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
707Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
708Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
709TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
710Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
711Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
712Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
713Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
714The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
715The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
716The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
717The effects of layering in ferroelectric Si-doped HfO2 thin films
718The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
719The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
720The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
721The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
722The important role of water in growth of monolayer transition metal dichalcogenides
723The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
724The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
725The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
726The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
727The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
728The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
729The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
730Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
731Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
732Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
733Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
734Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition
735Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
736Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
737Thin film GaP for solar cell application
738Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
739Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
740TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
741TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
742Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
743Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
744Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches
745Topographically selective deposition
746Tribological properties of thin films made by atomic layer deposition sliding against silicon
747Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
748Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
749Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
750Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
751Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
752Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
753Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
754Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
755Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
756Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
757Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
758Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
759Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
760Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
761Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
762Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
763Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
764Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
765Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
766Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
767Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
768Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
769WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
770Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
771Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
772XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
773ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
774ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window"
775ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
776ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
777α-Ga2O3 grown by low temperature atomic layer deposition on sapphire