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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Electron-enhanced atomic layer deposition of silicon thin films at room temperature
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A118 (2018)
Date:
2017-11-30
Author Information
| Name | Institution |
|---|---|
| Jaclyn K. Sprenger | University of Colorado, Boulder |
| Huaxing Sun | University of Colorado, Boulder |
| A. S. Cavanagh | University of Colorado, Boulder |
| Steven George | University of Colorado, Boulder |
Films
Plasma Si
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Substrates
| Al2O3 |
| ZnMgO |
Keywords
Notes
| 1635 |