Electron-enhanced atomic layer deposition of silicon thin films at room temperature

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A118 (2018)
Date:
2017-11-30
DOI:
http://dx.doi.org/10.1116/1.5006696

Author Information

Name Institution
Jaclyn K. SprengerUniversity of Colorado, Boulder
Huaxing SunUniversity of Colorado, Boulder
A. S. CavanaghUniversity of Colorado, Boulder
Steven GeorgeUniversity of Colorado, Boulder

Films

Plasma Si

Hardware used: Custom Hot-wire
Disilane, Si2H6
CAS#: 1590-87-0
Deposition Temperature = 27C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: RBD Instrument microCMA

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5600 ESCA

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bede D1

Substrates

Al2O3
ZnMgO

Notes

1635