Chemical Composition, Impurities Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
9A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
10A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
11A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
12A route to low temperature growth of single crystal GaN on sapphire
13A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
14A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
15Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
16Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
17Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
18Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
19Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
20Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
21ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
22ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
23ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
24ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
25ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
26AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
27Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
28AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
29Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
30Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
31An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
32An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
33An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
34An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
35Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
36Analysis of nitrogen species in titanium oxynitride ALD films
37Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
38Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
39Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
40Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
41Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
42Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
43Atmospheric pressure plasma enhanced spatial ALD of silver
44Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
45Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
46Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
47Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
48Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
49Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
50Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
51Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
52Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
53Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
54Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
55Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
56Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
57Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
58Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
59Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
60Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
61Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
62Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
63Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
64Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
65Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
66Atomic layer deposition of GaN at low temperatures
67Atomic Layer Deposition of Gold Metal
68Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
69Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
70Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
71Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
72Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
73Atomic layer deposition of metal-oxide thin films on cellulose fibers
74Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
75Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
76Atomic Layer Deposition of Niobium Nitride from Different Precursors
77Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
78Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
79Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
80Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
81Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
82Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
83Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
84Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
85Atomic Layer Deposition of the Solid Electrolyte LiPON
86Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
87Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
88Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
89Atomic layer deposition of titanium nitride from TDMAT precursor
90Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
91Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
92Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
93Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
94Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
95Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
96Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
97Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
98Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
99Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
100Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
101Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
102Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
103Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
104Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
105Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
106Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
107Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
108Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
109Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
110Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
111Characteristics of HfO2 thin films grown by plasma atomic layer deposition
112Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
113Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
114Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
115Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
116Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
117Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
118Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
119Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
120Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
121Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
122Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
123Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
124Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
125Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
126Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
127Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
128Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
129Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
130Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
131Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
132Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
133Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
134Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
135Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
136Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
137Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
138Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
139Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
140Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
141Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
142Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
143Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
144Composite materials and nanoporous thin layers made by atomic layer deposition
145Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
146Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
147Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
148Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
149Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
150Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
151Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
152Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
153Copper-ALD Seed Layer as an Enabler for Device Scaling
154Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
155Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
156Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
157Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
158Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
159Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
160Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
161Damage evaluation in graphene underlying atomic layer deposition dielectrics
162Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
163Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
164Densification of Thin Aluminum Oxide Films by Thermal Treatments
165Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
166Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
167Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
168Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
169Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
170Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
171Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
172Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
173Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
174Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
175Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
176Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
177Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
178Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
179Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
180Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
181Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
182Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
183Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
184Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
185Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
186Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
187Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
188Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
189Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
190Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
191Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
192Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
193Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
194Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
195Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
196Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
197Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
198Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
199Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
200Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
201Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
202Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
203Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
204Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
205Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
206Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
207Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
208Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
209Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
210Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
211Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
212Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
213Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
214Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
215Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
216Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
217Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
218Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
219Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
220Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
221Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
222Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
223Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
224Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
225Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
226Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
227Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
228Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
229Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
230Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
231Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
232Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
233Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
234Evaluation of plasma parameters on PEALD deposited TaCN
235Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
236Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
237Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
238Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
239Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
240Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
241Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
242Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
243Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
244Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
245Flexible Memristive Memory Array on Plastic Substrates
246Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
247Formation of aluminum nitride thin films as gate dielectrics on Si(100)
248Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
249Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
250Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
251Fully CMOS-compatible titanium nitride nanoantennas
252Fundamental beam studies of radical enhanced atomic layer deposition of TiN
253GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
254Gadolinium nitride films deposited using a PEALD based process
255GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
256GeSbTe deposition for the PRAM application
257Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
258Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
259Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
260Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
261Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
262Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
263Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
264Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
265Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
266Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
267Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
268Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
269Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
270Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
271Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
272Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
273Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
274Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
275Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
276HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
277HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
278High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
279High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
280High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
281High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
282High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
283High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
284High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
285High-Reflective Coatings For Ground and Space Based Applications
286High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
287Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
288Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
289Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
290Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
291Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
292Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
293Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
294Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
295Hydrogen plasma-enhanced atomic layer deposition of copper thin films
296Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
297Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
298Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
299Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
300Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
301Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
302Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
303Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
304Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
305Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
306Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
307Improved understanding of recombination at the Si/Al2O3 interface
308Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
309Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
310Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
311Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
312Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
313Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
314In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
315In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
316In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
317In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
318In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
319In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
320In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
321In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
322In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
323In-gap states in titanium dioxide and oxynitride atomic layer deposited films
324In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
325Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
326Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
327Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
328Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
329Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
330Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
331Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
332Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
333Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
334Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
335Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
336Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
337Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
338Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
339Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
340Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
341Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
342Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
343Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
344Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
345Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
346Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
347Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
348Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
349Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
350Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
351Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
352Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
353Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
354Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
355Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
356Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
357Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
358Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
359Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
360Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
361Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
362Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
363Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
364Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
365Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
366Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
367Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
368Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
369Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
370Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
371Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
372Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
373Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
374Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
375Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
376Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
377Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
378Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
379Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
380Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
381Low temperature temporal and spatial atomic layer deposition of TiO2 films
382Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
383Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
384Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
385Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
386Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
387Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
388Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
389Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
390Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
391Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
392Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
393Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
394Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
395Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
396Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
397Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
398Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
399Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
400Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
401Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
402Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
403Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
404Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
405Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
406MANOS performance dependence on ALD Al2O3 oxidation source
407Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
408Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
409Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
410Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
411Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
412Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
413Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
414Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
415MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
416Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
417Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
418Nitride memristors
419Nitride passivation of the interface between high-k dielectrics and SiGe
420Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
421Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
422Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
423Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
424Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
425On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
426Optical and Electrical Properties of TixSi1-xOy Films
427Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
428Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
429Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
430Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
431Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
432Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
433Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
434Oxygen migration in TiO2-based higher-k gate stacks
435Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
436PEALD AlN: controlling growth and film crystallinity
437PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
438PEALD of Copper using New Precursors for Next Generation of Interconnections
439PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
440PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
441PEALD ZrO2 Films Deposition on TiN and Si Substrates
442Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
443Perspectives on future directions in III-N semiconductor research
444Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
445Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
446Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
447Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
448Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
449Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
450Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
451Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
452Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
453Plasma enhanced atomic layer deposition of aluminum sulfide thin films
454Plasma enhanced atomic layer deposition of Fe2O3 thin films
455Plasma enhanced atomic layer deposition of Ga2O3 thin films
456Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
457Plasma enhanced atomic layer deposition of gallium sulfide thin films
458Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
459Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
460Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
461Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
462Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
463Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
464Plasma enhanced atomic layer deposition of SiNx:H and SiO2
465Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
466Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
467Plasma enhanced atomic layer deposition of zinc sulfide thin films
468Plasma Enhanced Atomic Layer Deposition on Powders
469Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
470Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
471Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
472Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
473Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
474Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
475Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
476Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
477Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
478Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
479Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
480Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
481Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
482Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
483Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
484Plasma-Assisted Atomic Layer Deposition of Palladium
485Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
486Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
487Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
488Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
489Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
490Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
491Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
492Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
493Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
494Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
495Plasma-enhanced ALD system for SRF cavity
496Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
497Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
498Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
499Plasma-enhanced atomic layer deposition for plasmonic TiN
500Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
501Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
502Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
503Plasma-enhanced atomic layer deposition of BaTiO3
504Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
505Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
506Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
507Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
508Plasma-Enhanced Atomic Layer Deposition of Ni
509Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
510Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
511Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
512Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
513Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
514Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
515Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
516Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
517Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
518Plasma-enhanced atomic layer deposition of superconducting niobium nitride
519Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
520Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
521Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
522Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
523Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
524Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
525Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
526Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
527Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
528Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
529Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
530Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
531Plasma-enhanced atomic layer deposition of titanium vanadium nitride
532Plasma-enhanced atomic layer deposition of tungsten nitride
533Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
534Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
535Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
536Plasma-enhanced atomic layer deposition of vanadium nitride
537Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
538Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
539Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
540Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
541Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
542Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
543Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
544Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
545Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
546Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
547Properties of AlN grown by plasma enhanced atomic layer deposition
548Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
549Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
550Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
551Protective capping and surface passivation of III-V nanowires by atomic layer deposition
552Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
553Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
554Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
555Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
556Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
557Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
558Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
559Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
560Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
561Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
562Remote Plasma ALD of Platinum and Platinum Oxide Films
563Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
564Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
565Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
566Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
567Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
568Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
569Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
570Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
571Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
572Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
573Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
574Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
575Room temperature atomic layer deposition of TiO2 on gold nanoparticles
576Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
577Room-Temperature Atomic Layer Deposition of Platinum
578Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
579Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
580Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
581RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
582RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
583Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
584Ru thin film grown on TaN by plasma enhanced atomic layer deposition
585Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
586Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
587Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
588Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
589Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
590Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
591Self-Limiting Growth of GaN at Low Temperatures
592Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
593Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
594Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
595Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
596Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
597Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
598Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
599Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
600Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
601Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
602Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
603Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
604Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
605Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
606Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
607Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
608Structural and optical characterization of low-temperature ALD crystalline AlN
609Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
610Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
611Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
612Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
613Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
614Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
615Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
616Study on the characteristics of aluminum thin films prepared by atomic layer deposition
617Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
618Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
619Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
620Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
621Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
622Surface and sensing properties of PE-ALD SnO2 thin film
623Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
624Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
625Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
626Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
627Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
628Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
629Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
630Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
631Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
632TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
633TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
634Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
635Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
636Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
637The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
638The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
639The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
640The effects of layering in ferroelectric Si-doped HfO2 thin films
641The effects of plasma treatment on the thermal stability of HfO2 thin films
642The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
643The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
644The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
645The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
646The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
647The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
648The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
649The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
650The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
651The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
652The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
653Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
654Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
655Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
656Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
657Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
658Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
659Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
660Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
661Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
662TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
663Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
664TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
665Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
666Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
667Trilayer Tunnel Selectors for Memristor Memory Cells
668Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
669Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
670Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
671Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
672Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
673Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
674Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
675Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
676Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
677Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
678Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
679Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
680Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
681Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
682Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
683Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
684Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
685Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
686Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
687Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
688Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
689Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
690X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
691ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
692ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
693ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition


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