Chemical Composition, Impurities Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Chemical Composition, Impurities returned 596 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
9A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
10A route to low temperature growth of single crystal GaN on sapphire
11A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
12A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
13Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
14Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
15Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
16Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
17Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
18Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
19ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
20ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
21ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
22ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
23AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
24Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
25AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
26Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
27Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
28An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
29An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
30An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
31Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
32Analysis of nitrogen species in titanium oxynitride ALD films
33Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
34Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
35Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
36Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
37Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
38Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
39Atmospheric pressure plasma enhanced spatial ALD of silver
40Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
41Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
42Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
43Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
44Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
45Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
46Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
47Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
48Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
49Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
50Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
51Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
52Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
53Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
54Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
55Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
56Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
57Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
58Atomic layer deposition of GaN at low temperatures
59Atomic Layer Deposition of Gold Metal
60Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
61Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
62Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
63Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
64Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
65Atomic layer deposition of metal-oxide thin films on cellulose fibers
66Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
67Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
68Atomic Layer Deposition of Niobium Nitride from Different Precursors
69Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
70Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
71Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
72Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
73Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
74Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
75Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
76Atomic Layer Deposition of the Solid Electrolyte LiPON
77Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
78Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
79Atomic layer deposition of titanium nitride from TDMAT precursor
80Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
81Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
82Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
83Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
84Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
85Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
86Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
87Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
88Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
89Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
90Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
91Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
92Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
93Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
94Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
95Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
96Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
97Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
98Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
99Characteristics of HfO2 thin films grown by plasma atomic layer deposition
100Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
101Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
102Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
103Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
104Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
105Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
106Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
107Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
108Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
109Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
110Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
111Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
112Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
113Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
114Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
115Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
116Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
117Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
118Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
119Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
120Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
121Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
122Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
123Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
124Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
125Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
126Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
127Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
128Composite materials and nanoporous thin layers made by atomic layer deposition
129Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
130Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
131Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
132Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
133Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
134Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
135Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
136Copper-ALD Seed Layer as an Enabler for Device Scaling
137Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
138Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
139Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
140Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
141Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
142Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
143Damage evaluation in graphene underlying atomic layer deposition dielectrics
144Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
145Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
146Densification of Thin Aluminum Oxide Films by Thermal Treatments
147Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
148Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
149Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
150Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
151Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
152Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
153Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
154Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
155Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
156Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
157Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
158Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
159Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
160Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
161Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
162Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
163Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
164Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
165Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
166Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
167Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
168Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
169Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
170Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
171Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
172Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
173Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
174Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
175Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
176Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
177Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
178Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
179Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
180Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
181Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
182Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
183Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
184Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
185Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
186Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
187Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
188Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
189Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
190Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
191Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
192Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
193Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
194Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
195Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
196Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
197Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
198Evaluation of plasma parameters on PEALD deposited TaCN
199Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
200Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
201Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
202Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
203Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
204Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
205Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
206Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
207Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
208Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
209Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
210Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
211Flexible Memristive Memory Array on Plastic Substrates
212Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
213Formation of aluminum nitride thin films as gate dielectrics on Si(100)
214Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
215Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
216Fully CMOS-compatible titanium nitride nanoantennas
217Fundamental beam studies of radical enhanced atomic layer deposition of TiN
218GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
219Gadolinium nitride films deposited using a PEALD based process
220GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
221Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
222Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
223Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
224Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
225Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
226Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
227Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
228Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
229Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
230Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
231Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
232Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
233Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
234Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
235Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
236HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
237HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
238High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
239High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
240High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
241High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
242High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
243High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
244High-Reflective Coatings For Ground and Space Based Applications
245Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
246Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
247Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
248Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
249Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
250Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
251Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
252Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
253Hydrogen plasma-enhanced atomic layer deposition of copper thin films
254Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
255Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
256Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
257Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
258Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
259Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
260Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
261Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
262Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
263Improved understanding of recombination at the Si/Al2O3 interface
264Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
265Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
266Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
267Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
268In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
269In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
270In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
271In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
272In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
273In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
274In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
275In-gap states in titanium dioxide and oxynitride atomic layer deposited films
276Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
277Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
278Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
279Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
280Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
281Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
282Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
283Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
284Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
285Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
286Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
287Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
288Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
289Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
290Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
291Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
292Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
293Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
294Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
295Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
296Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
297Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
298Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
299Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
300Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
301Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
302Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
303Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
304Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
305Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
306Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
307Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
308Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
309Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
310Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
311Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
312Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
313Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
314Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
315Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
316Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
317Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
318Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
319Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
320Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
321Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
322Low temperature temporal and spatial atomic layer deposition of TiO2 films
323Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
324Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
325Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
326Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
327Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
328Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
329Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
330Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
331Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
332Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
333Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
334Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
335Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
336Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
337Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
338Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
339Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
340Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
341Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
342Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
343Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
344Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
345Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
346Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
347Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
348MANOS performance dependence on ALD Al2O3 oxidation source
349Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
350Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
351Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
352Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
353Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
354Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
355Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
356Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
357Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
358Nitride memristors
359Nitride passivation of the interface between high-k dielectrics and SiGe
360Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
361Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
362Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
363Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
364Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
365On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
366Optical and Electrical Properties of TixSi1-xOy Films
367Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
368Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
369Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
370Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
371Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
372Oxygen migration in TiO2-based higher-k gate stacks
373Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
374PEALD AlN: controlling growth and film crystallinity
375PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
376PEALD of Copper using New Precursors for Next Generation of Interconnections
377PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
378PEALD ZrO2 Films Deposition on TiN and Si Substrates
379Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
380Perspectives on future directions in III-N semiconductor research
381Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
382Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
383Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
384Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
385Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
386Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
387Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
388Plasma enhanced atomic layer deposition of aluminum sulfide thin films
389Plasma enhanced atomic layer deposition of Fe2O3 thin films
390Plasma enhanced atomic layer deposition of Ga2O3 thin films
391Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
392Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
393Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
394Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
395Plasma enhanced atomic layer deposition of SiNx:H and SiO2
396Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
397Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
398Plasma enhanced atomic layer deposition of zinc sulfide thin films
399Plasma Enhanced Atomic Layer Deposition on Powders
400Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
401Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
402Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
403Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
404Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
405Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
406Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
407Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
408Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
409Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
410Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
411Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
412Plasma-Assisted Atomic Layer Deposition of Palladium
413Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
414Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
415Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
416Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
417Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
418Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
419Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
420Plasma-enhanced ALD system for SRF cavity
421Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
422Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
423Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
424Plasma-enhanced atomic layer deposition for plasmonic TiN
425Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
426Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
427Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
428Plasma-enhanced atomic layer deposition of BaTiO3
429Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
430Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
431Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
432Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
433Plasma-Enhanced Atomic Layer Deposition of Ni
434Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
435Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
436Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
437Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
438Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
439Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
440Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
441Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
442Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
443Plasma-enhanced atomic layer deposition of superconducting niobium nitride
444Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
445Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
446Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
447Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
448Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
449Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
450Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
451Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
452Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
453Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
454Plasma-enhanced atomic layer deposition of titanium vanadium nitride
455Plasma-enhanced atomic layer deposition of tungsten nitride
456Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
457Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
458Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
459Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
460Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
461Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
462Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
463Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
464Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
465Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
466Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
467Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
468Properties of AlN grown by plasma enhanced atomic layer deposition
469Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
470Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
471Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
472Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
473Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
474Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
475Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
476Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
477Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
478Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
479Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
480Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
481Remote Plasma ALD of Platinum and Platinum Oxide Films
482Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
483Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
484Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
485Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
486Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
487Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
488Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
489Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
490Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
491Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
492Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
493Room temperature atomic layer deposition of TiO2 on gold nanoparticles
494Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
495Room-Temperature Atomic Layer Deposition of Platinum
496Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
497Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
498RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
499RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
500Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
501Ru thin film grown on TaN by plasma enhanced atomic layer deposition
502Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
503Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
504Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
505Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
506Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
507Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
508Self-Limiting Growth of GaN at Low Temperatures
509Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
510Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
511Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
512Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
513Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
514Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
515Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
516Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
517Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
518Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
519Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
520Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
521Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
522Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
523Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
524Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
525Structural and optical characterization of low-temperature ALD crystalline AlN
526Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
527Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
528Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
529Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
530Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
531Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
532Study on the characteristics of aluminum thin films prepared by atomic layer deposition
533Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
534Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
535Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
536Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
537Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
538Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
539Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
540Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
541Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
542Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
543Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
544Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
545TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
546Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
547Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
548Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
549The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
550The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
551The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
552The effects of layering in ferroelectric Si-doped HfO2 thin films
553The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
554The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
555The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
556The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
557The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
558The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
559The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
560The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
561The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
562Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
563Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
564Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
565Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
566Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
567Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
568Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
569TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
570Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
571TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
572Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
573Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
574Trilayer Tunnel Selectors for Memristor Memory Cells
575Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
576Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
577Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
578Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
579Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
580Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
581Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
582Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
583Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
584Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
585Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
586Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
587Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
588Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
589Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
590Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
591Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
592Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
593Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
594X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
595ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
596ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


Shortcuts

Films
Precursors
Deposition Hardware
Authors
Film and Plasma Characteristics
Multi-factor Search
ALD and PEALD Background
On-line PEALD Theses
About plasma-ald.com

Contact Us
ALD Links

© 2014-2019 plasma-ald.com