Chemical Composition, Impurities Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
9A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
10A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
11A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
12A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
13A route to low temperature growth of single crystal GaN on sapphire
14A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
15A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
16Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
17Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
18Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
19Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
20Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
21Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
22ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
23ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
24ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
25ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
26ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
27AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
28All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
29Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
30AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
31Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
32Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
33Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
34An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
35An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
36An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
37An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
38Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
39Analysis of nitrogen species in titanium oxynitride ALD films
40Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
41Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
42Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
43Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
44Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
45Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
46Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
47Atmospheric pressure plasma enhanced spatial ALD of silver
48Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
49Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
50Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
51Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
52Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
53Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
54Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
55Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
56Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
57Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
58Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
59Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
60Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
61Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
62Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
63Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
64Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
65Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
66Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
67Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
68Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
69Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
70Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
71Atomic layer deposition of GaN at low temperatures
72Atomic Layer Deposition of Gold Metal
73Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
74Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
75Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
76Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
77Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
78Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
79Atomic layer deposition of metal-oxide thin films on cellulose fibers
80Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
81Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
82Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries
83Atomic Layer Deposition of Niobium Nitride from Different Precursors
84Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
85Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
86Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
87Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
88Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
89Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
90Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
91Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
92Atomic Layer Deposition of the Solid Electrolyte LiPON
93Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
94Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
95Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
96Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
97Atomic layer deposition of titanium nitride from TDMAT precursor
98Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
99Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
100Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
101Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
102Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
103Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
104Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
105Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
106Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
107Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis
108Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
109Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
110Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
111Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
112Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
113Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
114Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
115Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
116Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
117Carbon content control of silicon oxycarbide film with methane containing plasma
118Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
119Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
120Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
121Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
122Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
123Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
124Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
125Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
126Characteristics of HfO2 thin films grown by plasma atomic layer deposition
127Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
128Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
129Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
130Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
131Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
132Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
133Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
134Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
135Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
136Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
137Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
138Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
139Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
140Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
141Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
142Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
143Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
144Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
145Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
146Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
147Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
148Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
149Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
150Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
151Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
152Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
153Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
154Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
155Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
156Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
157Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
158Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
159Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
160Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
161Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
162Composite materials and nanoporous thin layers made by atomic layer deposition
163Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
164Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
165Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
166Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
167Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
168Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
169Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
170Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
171Copper-ALD Seed Layer as an Enabler for Device Scaling
172Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
173Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
174Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
175Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
176Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
177Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
178Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
179Damage evaluation in graphene underlying atomic layer deposition dielectrics
180Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
181Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
182Densification of Thin Aluminum Oxide Films by Thermal Treatments
183Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
184Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
185Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
186Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
187Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
188Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
189Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
190Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
191Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
192Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
193Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
194Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
195Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
196Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
197Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
198Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
199Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
200Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
201Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
202Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
203Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
204Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
205Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
206Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
207Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
208Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
209Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
210Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
211Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
212Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
213Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
214Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
215Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
216Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
217Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
218Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
219Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
220Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
221Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
222Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
223Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
224Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
225Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
226Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
227Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
228Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
229Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
230Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
231Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
232Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
233Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
234Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
235Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
236Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
237Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
238Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
239Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
240Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
241Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
242Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
243Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
244Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
245Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
246Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
247Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
248Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
249Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
250Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
251Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
252Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
253Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
254Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
255Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
256Evaluation of plasma parameters on PEALD deposited TaCN
257Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
258Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
259Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
260Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
261Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
262Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
263Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
264Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
265Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
266Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
267Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
268Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
269Flexible Memristive Memory Array on Plastic Substrates
270Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
271Formation of aluminum nitride thin films as gate dielectrics on Si(100)
272Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
273Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
274Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
275From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications
276Fully CMOS-compatible titanium nitride nanoantennas
277Fundamental beam studies of radical enhanced atomic layer deposition of TiN
278GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
279Gadolinium nitride films deposited using a PEALD based process
280GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
281GeSbTe deposition for the PRAM application
282Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
283Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
284Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
285Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
286Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
287Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
288Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
289Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
290Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
291Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
292Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
293Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
294Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
295Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
296Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
297Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
298Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
299Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
300Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
301Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
302HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
303HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
304High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
305High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
306High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
307High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
308High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
309High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
310High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
311High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
312High-Reflective Coatings For Ground and Space Based Applications
313High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
314Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
315Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
316Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
317Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
318Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
319Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
320Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
321Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
322Hydrogen plasma-enhanced atomic layer deposition of copper thin films
323Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
324Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
325Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
326Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition
327Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
328Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
329Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
330Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
331Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
332Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
333Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
334Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
335Improved understanding of recombination at the Si/Al2O3 interface
336Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
337Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
338Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
339Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
340Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
341Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
342In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
343In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
344In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
345In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
346In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
347In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
348In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
349In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
350In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
351In-gap states in titanium dioxide and oxynitride atomic layer deposited films
352In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
353Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
354Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
355Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
356Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
357Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
358Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
359Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
360Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
361Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
362Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
363Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
364Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
365Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
366Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
367Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
368Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
369Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
370Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
371Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
372Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
373Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
374Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
375Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
376Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
377Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
378Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
379Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
380Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
381Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
382Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
383Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
384Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
385Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
386Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
387Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
388Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
389Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
390Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
391Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
392Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
393Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
394Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
395Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
396Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
397Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
398Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
399Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
400Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
401Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
402Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
403Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
404Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
405Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
406Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
407Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
408Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
409Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
410Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
411Low temperature temporal and spatial atomic layer deposition of TiO2 films
412Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
413Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
414Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
415Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
416Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
417Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
418Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
419Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
420Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
421Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
422Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
423Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
424Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
425Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
426Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
427Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
428Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
429Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
430Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
431Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
432Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
433Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
434Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
435Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
436MANOS performance dependence on ALD Al2O3 oxidation source
437Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
438Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
439Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
440Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
441Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
442Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
443Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
444Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
445Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
446MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
447Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
448Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
449Nitride memristors
450Nitride passivation of the interface between high-k dielectrics and SiGe
451Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
452Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
453Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
454Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
455Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
456On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
457Optical and Electrical Properties of TixSi1-xOy Films
458Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
459Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
460Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
461Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
462Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
463Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
464Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
465Oxygen migration in TiO2-based higher-k gate stacks
466Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
467PEALD AlN: controlling growth and film crystallinity
468PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
469PEALD of Copper using New Precursors for Next Generation of Interconnections
470PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
471PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
472PEALD ZrO2 Films Deposition on TiN and Si Substrates
473Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
474Perspectives on future directions in III-N semiconductor research
475Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
476Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
477Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
478Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
479Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
480Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
481Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
482Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
483Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
484Plasma enhanced atomic layer deposition of aluminum sulfide thin films
485Plasma enhanced atomic layer deposition of Fe2O3 thin films
486Plasma enhanced atomic layer deposition of Ga2O3 thin films
487Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
488Plasma enhanced atomic layer deposition of gallium sulfide thin films
489Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
490Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
491Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
492Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
493Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
494Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
495Plasma enhanced atomic layer deposition of SiNx:H and SiO2
496Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
497Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
498Plasma enhanced atomic layer deposition of zinc sulfide thin films
499Plasma Enhanced Atomic Layer Deposition on Powders
500Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
501Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
502Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
503Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
504Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
505Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
506Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
507Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
508Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
509Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
510Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
511Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
512Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
513Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
514Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
515Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
516Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
517Plasma-Assisted Atomic Layer Deposition of Palladium
518Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
519Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
520Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
521Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
522Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
523Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
524Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
525Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
526Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
527Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
528Plasma-enhanced ALD system for SRF cavity
529Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
530Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
531Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
532Plasma-enhanced atomic layer deposition for plasmonic TiN
533Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
534Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
535Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
536Plasma-enhanced atomic layer deposition of BaTiO3
537Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
538Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
539Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
540Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
541Plasma-Enhanced Atomic Layer Deposition of Ni
542Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
543Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
544Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
545Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
546Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
547Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
548Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
549Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
550Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
551Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
552Plasma-enhanced atomic layer deposition of superconducting niobium nitride
553Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
554Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
555Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
556Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
557Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
558Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
559Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
560Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
561Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
562Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
563Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
564Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
565Plasma-enhanced atomic layer deposition of titanium vanadium nitride
566Plasma-enhanced atomic layer deposition of tungsten nitride
567Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
568Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
569Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
570Plasma-enhanced atomic layer deposition of vanadium nitride
571Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
572Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
573Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
574Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
575Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
576Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
577Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
578Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
579Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
580Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
581Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
582Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
583Properties of AlN grown by plasma enhanced atomic layer deposition
584Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
585Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
586Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
587Protective capping and surface passivation of III-V nanowires by atomic layer deposition
588Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
589Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
590Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
591Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
592Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
593Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
594Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
595Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
596Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
597Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
598Remote Plasma ALD of Platinum and Platinum Oxide Films
599Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
600Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
601Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
602Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
603Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
604Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
605Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
606Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
607Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
608Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
609Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
610Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
611Room temperature atomic layer deposition of TiO2 on gold nanoparticles
612Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
613Room-Temperature Atomic Layer Deposition of Platinum
614Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
615Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
616Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
617RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
618RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
619Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
620Ru thin film grown on TaN by plasma enhanced atomic layer deposition
621Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
622Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
623Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
624Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
625Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
626Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
627Self-Limiting Growth of GaN at Low Temperatures
628Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
629Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
630Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
631Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
632Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
633Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
634Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
635Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
636Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
637Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
638Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
639Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
640Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
641Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
642Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
643Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
644Structural and optical characterization of low-temperature ALD crystalline AlN
645Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
646Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
647Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
648Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
649Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
650Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
651Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy
652Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
653Study on the characteristics of aluminum thin films prepared by atomic layer deposition
654Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
655Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
656Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
657Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
658Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
659Surface and sensing properties of PE-ALD SnO2 thin film
660Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
661Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
662Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
663Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
664Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
665Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
666Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
667Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
668Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
669TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
670TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
671Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
672Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
673Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
674The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
675The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
676The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
677The effects of layering in ferroelectric Si-doped HfO2 thin films
678The effects of plasma treatment on the thermal stability of HfO2 thin films
679The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
680The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
681The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
682The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
683The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
684The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
685The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
686The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
687The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
688The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
689The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
690The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
691Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
692Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
693Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
694Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
695Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
696Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
697Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
698Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
699Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
700Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
701TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
702Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
703TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
704Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
705Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
706Trilayer Tunnel Selectors for Memristor Memory Cells
707Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
708Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
709Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
710Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
711Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
712Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
713Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
714Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
715Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
716Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
717Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
718Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
719Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
720Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
721Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
722Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
723Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
724Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
725Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
726Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
727Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
728Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
729Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
730X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
731XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
732ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
733ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
734ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition