Chemical Composition, Impurities Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
9A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
10A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
11A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
12A route to low temperature growth of single crystal GaN on sapphire
13A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
14A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
15Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
16Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
17Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
18Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
19Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
20Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
21ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
22ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
23ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
24ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
25ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
26AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
27All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
28Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
29AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
30Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
31Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
32An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
33An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
34An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
35An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
36Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
37Analysis of nitrogen species in titanium oxynitride ALD films
38Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
39Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
40Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
41Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
42Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
43Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
44Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
45Atmospheric pressure plasma enhanced spatial ALD of silver
46Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
47Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
48Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
49Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
50Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
51Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
52Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
53Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
54Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
55Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
56Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
57Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
58Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
59Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
60Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
61Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
62Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
63Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
64Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
65Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
66Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
67Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
68Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
69Atomic layer deposition of GaN at low temperatures
70Atomic Layer Deposition of Gold Metal
71Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
72Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
73Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
74Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
75Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
76Atomic layer deposition of metal-oxide thin films on cellulose fibers
77Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
78Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
79Atomic Layer Deposition of Niobium Nitride from Different Precursors
80Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
81Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
82Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
83Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
84Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
85Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
86Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
87Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
88Atomic Layer Deposition of the Solid Electrolyte LiPON
89Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
90Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
91Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
92Atomic layer deposition of titanium nitride from TDMAT precursor
93Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
94Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
95Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
96Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
97Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
98Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
99Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
100Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
101Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
102Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
103Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
104Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
105Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
106Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
107Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
108Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
109Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
110Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
111Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
112Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
113Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
114Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
115Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
116Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
117Characteristics of HfO2 thin films grown by plasma atomic layer deposition
118Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
119Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
120Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
121Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
122Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
123Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
124Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
125Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
126Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
127Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
128Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
129Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
130Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
131Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
132Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
133Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
134Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
135Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
136Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
137Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
138Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
139Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
140Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
141Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
142Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
143Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
144Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
145Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
146Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
147Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
148Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
149Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
150Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
151Composite materials and nanoporous thin layers made by atomic layer deposition
152Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
153Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
154Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
155Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
156Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
157Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
158Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
159Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
160Copper-ALD Seed Layer as an Enabler for Device Scaling
161Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
162Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
163Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
164Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
165Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
166Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
167Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
168Damage evaluation in graphene underlying atomic layer deposition dielectrics
169Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
170Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
171Densification of Thin Aluminum Oxide Films by Thermal Treatments
172Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
173Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
174Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
175Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
176Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
177Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
178Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
179Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
180Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
181Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
182Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
183Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
184Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
185Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
186Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
187Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
188Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
189Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
190Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
191Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
192Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
193Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
194Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
195Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
196Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
197Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
198Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
199Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
200Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
201Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
202Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
203Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
204Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
205Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
206Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
207Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
208Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
209Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
210Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
211Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
212Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
213Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
214Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
215Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
216Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
217Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
218Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
219Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
220Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
221Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
222Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
223Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
224Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
225Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
226Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
227Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
228Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
229Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
230Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
231Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
232Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
233Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
234Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
235Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
236Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
237Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
238Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
239Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
240Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
241Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
242Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
243Evaluation of plasma parameters on PEALD deposited TaCN
244Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
245Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
246Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
247Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
248Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
249Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
250Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
251Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
252Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
253Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
254Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
255Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
256Flexible Memristive Memory Array on Plastic Substrates
257Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
258Formation of aluminum nitride thin films as gate dielectrics on Si(100)
259Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
260Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
261Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
262Fully CMOS-compatible titanium nitride nanoantennas
263Fundamental beam studies of radical enhanced atomic layer deposition of TiN
264GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
265Gadolinium nitride films deposited using a PEALD based process
266GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
267GeSbTe deposition for the PRAM application
268Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
269Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
270Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
271Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
272Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
273Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
274Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
275Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
276Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
277Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
278Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
279Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
280Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
281Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
282Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
283Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
284Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
285Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
286Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
287Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
288HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
289HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
290High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
291High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
292High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
293High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
294High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
295High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
296High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
297High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
298High-Reflective Coatings For Ground and Space Based Applications
299High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
300Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
301Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
302Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
303Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
304Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
305Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
306Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
307Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
308Hydrogen plasma-enhanced atomic layer deposition of copper thin films
309Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
310Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
311Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
312Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
313Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
314Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
315Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
316Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
317Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
318Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
319Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
320Improved understanding of recombination at the Si/Al2O3 interface
321Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
322Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
323Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
324Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
325Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
326Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
327In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
328In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
329In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
330In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
331In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
332In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
333In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
334In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
335In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
336In-gap states in titanium dioxide and oxynitride atomic layer deposited films
337In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
338Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
339Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
340Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
341Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
342Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
343Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
344Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
345Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
346Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
347Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
348Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
349Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
350Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
351Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
352Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
353Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
354Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
355Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
356Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
357Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
358Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
359Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
360Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
361Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
362Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
363Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
364Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
365Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
366Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
367Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
368Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
369Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
370Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
371Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
372Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
373Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
374Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
375Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
376Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
377Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
378Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
379Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
380Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
381Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
382Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
383Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
384Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
385Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
386Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
387Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
388Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
389Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
390Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
391Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
392Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
393Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
394Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
395Low temperature temporal and spatial atomic layer deposition of TiO2 films
396Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
397Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
398Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
399Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
400Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
401Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
402Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
403Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
404Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
405Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
406Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
407Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
408Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
409Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
410Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
411Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
412Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
413Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
414Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
415Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
416Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
417Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
418Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
419Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
420MANOS performance dependence on ALD Al2O3 oxidation source
421Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
422Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
423Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
424Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
425Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
426Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
427Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
428Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
429MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
430Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
431Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
432Nitride memristors
433Nitride passivation of the interface between high-k dielectrics and SiGe
434Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
435Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
436Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
437Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
438Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
439On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
440Optical and Electrical Properties of TixSi1-xOy Films
441Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
442Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
443Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
444Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
445Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
446Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
447Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
448Oxygen migration in TiO2-based higher-k gate stacks
449Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
450PEALD AlN: controlling growth and film crystallinity
451PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
452PEALD of Copper using New Precursors for Next Generation of Interconnections
453PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
454PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
455PEALD ZrO2 Films Deposition on TiN and Si Substrates
456Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
457Perspectives on future directions in III-N semiconductor research
458Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
459Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
460Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
461Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
462Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
463Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
464Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
465Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
466Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
467Plasma enhanced atomic layer deposition of aluminum sulfide thin films
468Plasma enhanced atomic layer deposition of Fe2O3 thin films
469Plasma enhanced atomic layer deposition of Ga2O3 thin films
470Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
471Plasma enhanced atomic layer deposition of gallium sulfide thin films
472Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
473Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
474Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
475Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
476Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
477Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
478Plasma enhanced atomic layer deposition of SiNx:H and SiO2
479Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
480Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
481Plasma enhanced atomic layer deposition of zinc sulfide thin films
482Plasma Enhanced Atomic Layer Deposition on Powders
483Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
484Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
485Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
486Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
487Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
488Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
489Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
490Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
491Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
492Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
493Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
494Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
495Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
496Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
497Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
498Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
499Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
500Plasma-Assisted Atomic Layer Deposition of Palladium
501Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
502Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
503Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
504Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
505Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
506Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
507Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
508Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
509Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
510Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
511Plasma-enhanced ALD system for SRF cavity
512Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
513Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
514Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
515Plasma-enhanced atomic layer deposition for plasmonic TiN
516Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
517Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
518Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
519Plasma-enhanced atomic layer deposition of BaTiO3
520Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
521Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
522Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
523Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
524Plasma-Enhanced Atomic Layer Deposition of Ni
525Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
526Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
527Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
528Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
529Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
530Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
531Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
532Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
533Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
534Plasma-enhanced atomic layer deposition of superconducting niobium nitride
535Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
536Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
537Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
538Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
539Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
540Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
541Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
542Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
543Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
544Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
545Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
546Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
547Plasma-enhanced atomic layer deposition of titanium vanadium nitride
548Plasma-enhanced atomic layer deposition of tungsten nitride
549Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
550Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
551Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
552Plasma-enhanced atomic layer deposition of vanadium nitride
553Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
554Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
555Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
556Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
557Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
558Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
559Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
560Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
561Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
562Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
563Properties of AlN grown by plasma enhanced atomic layer deposition
564Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
565Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
566Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
567Protective capping and surface passivation of III-V nanowires by atomic layer deposition
568Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
569Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
570Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
571Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
572Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
573Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
574Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
575Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
576Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
577Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
578Remote Plasma ALD of Platinum and Platinum Oxide Films
579Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
580Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
581Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
582Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
583Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
584Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
585Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
586Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
587Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
588Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
589Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
590Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
591Room temperature atomic layer deposition of TiO2 on gold nanoparticles
592Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
593Room-Temperature Atomic Layer Deposition of Platinum
594Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
595Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
596Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
597RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
598RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
599Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
600Ru thin film grown on TaN by plasma enhanced atomic layer deposition
601Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
602Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
603Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
604Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
605Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
606Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
607Self-Limiting Growth of GaN at Low Temperatures
608Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
609Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
610Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
611Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
612Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
613Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
614Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
615Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
616Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
617Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
618Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
619Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
620Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
621Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
622Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
623Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
624Structural and optical characterization of low-temperature ALD crystalline AlN
625Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
626Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
627Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
628Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
629Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
630Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
631Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
632Study on the characteristics of aluminum thin films prepared by atomic layer deposition
633Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
634Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
635Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
636Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
637Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
638Surface and sensing properties of PE-ALD SnO2 thin film
639Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
640Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
641Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
642Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
643Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
644Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
645Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
646Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
647Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
648TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
649TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
650Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
651Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
652Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
653The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
654The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
655The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
656The effects of layering in ferroelectric Si-doped HfO2 thin films
657The effects of plasma treatment on the thermal stability of HfO2 thin films
658The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
659The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
660The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
661The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
662The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
663The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
664The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
665The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
666The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
667The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
668The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
669The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
670Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
671Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
672Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
673Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
674Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
675Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
676Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
677Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
678Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
679Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
680TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
681Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
682TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
683Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
684Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
685Trilayer Tunnel Selectors for Memristor Memory Cells
686Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
687Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
688Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
689Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
690Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
691Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
692Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
693Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
694Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
695Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
696Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
697Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
698Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
699Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
700Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
701Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
702Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
703Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
704Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
705Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
706Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
707Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
708X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
709XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
710ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
711ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
712ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition