Chemical Composition, Impurities Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
9A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
10A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
11A route to low temperature growth of single crystal GaN on sapphire
12A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
13A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
14Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
15Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
16Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
17Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
18Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
19Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
20ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
21ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
22ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
23ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
24ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
25AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
26Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
27AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
28Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
29Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
30An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
31An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
32An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
33An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
34Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
35Analysis of nitrogen species in titanium oxynitride ALD films
36Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
37Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
38Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
39Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
40Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
41Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
42Atmospheric pressure plasma enhanced spatial ALD of silver
43Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
44Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
45Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
46Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
47Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
48Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
49Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
50Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
51Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
52Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
53Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
54Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
55Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
56Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
57Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
58Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
59Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
60Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
61Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
62Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
63Atomic layer deposition of GaN at low temperatures
64Atomic Layer Deposition of Gold Metal
65Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
66Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
67Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
68Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
69Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
70Atomic layer deposition of metal-oxide thin films on cellulose fibers
71Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
72Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
73Atomic Layer Deposition of Niobium Nitride from Different Precursors
74Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
75Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
76Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
77Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
78Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
79Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
80Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
81Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
82Atomic Layer Deposition of the Solid Electrolyte LiPON
83Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
84Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
85Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
86Atomic layer deposition of titanium nitride from TDMAT precursor
87Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
88Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
89Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
90Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
91Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
92Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
93Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
94Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
95Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
96Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
97Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
98Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
99Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
100Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
101Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
102Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
103Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
104Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
105Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
106Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
107Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
108Characteristics of HfO2 thin films grown by plasma atomic layer deposition
109Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
110Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
111Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
112Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
113Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
114Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
115Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
116Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
117Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
118Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
119Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
120Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
121Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
122Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
123Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
124Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
125Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
126Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
127Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
128Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
129Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
130Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
131Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
132Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
133Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
134Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
135Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
136Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
137Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
138Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
139Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
140Composite materials and nanoporous thin layers made by atomic layer deposition
141Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
142Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
143Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
144Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
145Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
146Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
147Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
148Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
149Copper-ALD Seed Layer as an Enabler for Device Scaling
150Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
151Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
152Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
153Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
154Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
155Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
156Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
157Damage evaluation in graphene underlying atomic layer deposition dielectrics
158Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
159Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
160Densification of Thin Aluminum Oxide Films by Thermal Treatments
161Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
162Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
163Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
164Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
165Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
166Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
167Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
168Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
169Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
170Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
171Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
172Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
173Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
174Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
175Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
176Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
177Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
178Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
179Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
180Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
181Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
182Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
183Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
184Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
185Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
186Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
187Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
188Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
189Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
190Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
191Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
192Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
193Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
194Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
195Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
196Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
197Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
198Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
199Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
200Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
201Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
202Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
203Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
204Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
205Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
206Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
207Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
208Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
209Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
210Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
211Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
212Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
213Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
214Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
215Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
216Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
217Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
218Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
219Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
220Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
221Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
222Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
223Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
224Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
225Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
226Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
227Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
228Evaluation of plasma parameters on PEALD deposited TaCN
229Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
230Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
231Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
232Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
233Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
234Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
235Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
236Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
237Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
238Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
239Flexible Memristive Memory Array on Plastic Substrates
240Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
241Formation of aluminum nitride thin films as gate dielectrics on Si(100)
242Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
243Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
244Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
245Fully CMOS-compatible titanium nitride nanoantennas
246Fundamental beam studies of radical enhanced atomic layer deposition of TiN
247GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
248Gadolinium nitride films deposited using a PEALD based process
249GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
250GeSbTe deposition for the PRAM application
251Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
252Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
253Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
254Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
255Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
256Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
257Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
258Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
259Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
260Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
261Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
262Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
263Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
264Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
265Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
266Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
267Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
268Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
269Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
270HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
271HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
272High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
273High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
274High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
275High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
276High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
277High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
278High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
279High-Reflective Coatings For Ground and Space Based Applications
280High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
281Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
282Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
283Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
284Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
285Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
286Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
287Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
288Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
289Hydrogen plasma-enhanced atomic layer deposition of copper thin films
290Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
291Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
292Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
293Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
294Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
295Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
296Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
297Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
298Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
299Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
300Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
301Improved understanding of recombination at the Si/Al2O3 interface
302Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
303Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
304Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
305Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
306Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
307Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
308In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
309In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
310In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
311In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
312In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
313In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
314In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
315In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
316In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
317In-gap states in titanium dioxide and oxynitride atomic layer deposited films
318In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
319Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
320Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
321Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
322Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
323Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
324Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
325Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
326Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
327Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
328Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
329Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
330Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
331Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
332Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
333Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
334Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
335Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
336Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
337Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
338Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
339Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
340Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
341Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
342Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
343Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
344Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
345Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
346Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
347Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
348Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
349Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
350Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
351Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
352Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
353Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
354Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
355Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
356Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
357Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
358Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
359Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
360Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
361Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
362Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
363Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
364Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
365Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
366Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
367Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
368Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
369Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
370Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
371Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
372Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
373Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
374Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
375Low temperature temporal and spatial atomic layer deposition of TiO2 films
376Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
377Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
378Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
379Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
380Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
381Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
382Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
383Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
384Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
385Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
386Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
387Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
388Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
389Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
390Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
391Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
392Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
393Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
394Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
395Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
396Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
397Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
398Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
399Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
400MANOS performance dependence on ALD Al2O3 oxidation source
401Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
402Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
403Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
404Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
405Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
406Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
407Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
408Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
409Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
410Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
411Nitride memristors
412Nitride passivation of the interface between high-k dielectrics and SiGe
413Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
414Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
415Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
416Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
417Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
418On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
419Optical and Electrical Properties of TixSi1-xOy Films
420Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
421Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
422Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
423Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
424Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
425Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
426Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
427Oxygen migration in TiO2-based higher-k gate stacks
428Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
429PEALD AlN: controlling growth and film crystallinity
430PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
431PEALD of Copper using New Precursors for Next Generation of Interconnections
432PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
433PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
434PEALD ZrO2 Films Deposition on TiN and Si Substrates
435Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
436Perspectives on future directions in III-N semiconductor research
437Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
438Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
439Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
440Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
441Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
442Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
443Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
444Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
445Plasma enhanced atomic layer deposition of aluminum sulfide thin films
446Plasma enhanced atomic layer deposition of Fe2O3 thin films
447Plasma enhanced atomic layer deposition of Ga2O3 thin films
448Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
449Plasma enhanced atomic layer deposition of gallium sulfide thin films
450Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
451Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
452Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
453Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
454Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
455Plasma enhanced atomic layer deposition of SiNx:H and SiO2
456Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
457Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
458Plasma enhanced atomic layer deposition of zinc sulfide thin films
459Plasma Enhanced Atomic Layer Deposition on Powders
460Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
461Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
462Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
463Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
464Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
465Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
466Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
467Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
468Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
469Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
470Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
471Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
472Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
473Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
474Plasma-Assisted Atomic Layer Deposition of Palladium
475Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
476Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
477Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
478Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
479Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
480Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
481Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
482Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
483Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
484Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
485Plasma-enhanced ALD system for SRF cavity
486Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
487Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
488Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
489Plasma-enhanced atomic layer deposition for plasmonic TiN
490Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
491Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
492Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
493Plasma-enhanced atomic layer deposition of BaTiO3
494Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
495Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
496Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
497Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
498Plasma-Enhanced Atomic Layer Deposition of Ni
499Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
500Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
501Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
502Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
503Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
504Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
505Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
506Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
507Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
508Plasma-enhanced atomic layer deposition of superconducting niobium nitride
509Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
510Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
511Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
512Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
513Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
514Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
515Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
516Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
517Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
518Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
519Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
520Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
521Plasma-enhanced atomic layer deposition of titanium vanadium nitride
522Plasma-enhanced atomic layer deposition of tungsten nitride
523Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
524Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
525Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
526Plasma-enhanced atomic layer deposition of vanadium nitride
527Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
528Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
529Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
530Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
531Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
532Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
533Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
534Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
535Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
536Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
537Properties of AlN grown by plasma enhanced atomic layer deposition
538Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
539Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
540Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
541Protective capping and surface passivation of III-V nanowires by atomic layer deposition
542Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
543Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
544Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
545Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
546Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
547Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
548Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
549Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
550Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
551Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
552Remote Plasma ALD of Platinum and Platinum Oxide Films
553Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
554Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
555Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
556Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
557Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
558Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
559Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
560Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
561Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
562Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
563Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
564Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
565Room temperature atomic layer deposition of TiO2 on gold nanoparticles
566Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
567Room-Temperature Atomic Layer Deposition of Platinum
568Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
569Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
570Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
571RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
572RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
573Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
574Ru thin film grown on TaN by plasma enhanced atomic layer deposition
575Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
576Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
577Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
578Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
579Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
580Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
581Self-Limiting Growth of GaN at Low Temperatures
582Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
583Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
584Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
585Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
586Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
587Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
588Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
589Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
590Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
591Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
592Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
593Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
594Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
595Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
596Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
597Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
598Structural and optical characterization of low-temperature ALD crystalline AlN
599Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
600Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
601Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
602Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
603Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
604Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
605Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
606Study on the characteristics of aluminum thin films prepared by atomic layer deposition
607Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
608Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
609Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
610Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
611Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
612Surface and sensing properties of PE-ALD SnO2 thin film
613Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
614Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
615Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
616Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
617Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
618Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
619Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
620Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
621Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
622TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
623Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
624Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
625Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
626The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
627The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
628The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
629The effects of layering in ferroelectric Si-doped HfO2 thin films
630The effects of plasma treatment on the thermal stability of HfO2 thin films
631The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
632The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
633The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
634The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
635The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
636The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
637The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
638The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
639The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
640The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
641The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
642Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
643Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
644Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
645Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
646Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
647Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
648Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
649Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
650Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
651TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
652Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
653TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
654Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
655Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
656Trilayer Tunnel Selectors for Memristor Memory Cells
657Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
658Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
659Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
660Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
661Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
662Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
663Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
664Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
665Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
666Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
667Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
668Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
669Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
670Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
671Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
672Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
673Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
674Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
675Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
676Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
677X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
678ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
679ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
680ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition


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