Chemical Composition, Impurities Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
9A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
10A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
11A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
12A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
13A route to low temperature growth of single crystal GaN on sapphire
14A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
15A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
16Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
17Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
18Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
19Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
20Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
21Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
22ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
23ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
24ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
25ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
26ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
27AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
28All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
29Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
30AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
31Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
32Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
33Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
34An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
35An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
36An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
37An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
38Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
39Analysis of nitrogen species in titanium oxynitride ALD films
40Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
41Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
42Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
43Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
44Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
45Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
46Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
47Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
48Atmospheric pressure plasma enhanced spatial ALD of silver
49Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
50Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
51Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
52Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
53Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
54Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
55Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
56Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
57Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
58Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
59Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
60Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
61Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
62Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
63Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
64Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
65Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
66Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
67Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
68Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
69Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
70Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
71Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
72Atomic layer deposition of GaN at low temperatures
73Atomic Layer Deposition of Gold Metal
74Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
75Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
76Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
77Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
78Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
79Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
80Atomic layer deposition of metal-oxide thin films on cellulose fibers
81Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
82Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
83Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries
84Atomic Layer Deposition of Niobium Nitride from Different Precursors
85Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
86Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
87Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
88Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
89Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
90Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
91Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
92Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
93Atomic Layer Deposition of the Solid Electrolyte LiPON
94Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
95Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
96Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
97Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
98Atomic layer deposition of titanium nitride from TDMAT precursor
99Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
100Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
101Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
102Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
103Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
104Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
105Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
106Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
107Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
108Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis
109Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
110Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
111Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
112Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
113Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
114Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
115Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
116Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
117Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
118Carbon content control of silicon oxycarbide film with methane containing plasma
119Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
120Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
121Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
122Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
123Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
124Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
125Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
126Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
127Characteristics of HfO2 thin films grown by plasma atomic layer deposition
128Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
129Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
130Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
131Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
132Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
133Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
134Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
135Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
136Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
137Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
138Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
139Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
140Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
141Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
142Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
143Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
144Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
145Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
146Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
147Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
148Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
149Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
150Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
151Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
152Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
153Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
154Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
155Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
156Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
157Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
158Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
159Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
160Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
161Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
162Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
163Composite materials and nanoporous thin layers made by atomic layer deposition
164Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
165Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
166Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
167Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
168Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
169Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
170Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
171Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
172Copper-ALD Seed Layer as an Enabler for Device Scaling
173Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
174Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
175Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
176Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
177Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
178Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
179Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
180Damage evaluation in graphene underlying atomic layer deposition dielectrics
181Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
182Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
183Densification of Thin Aluminum Oxide Films by Thermal Treatments
184Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
185Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
186Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
187Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
188Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
189Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
190Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
191Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
192Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
193Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
194Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
195Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
196Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
197Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
198Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
199Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
200Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
201Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
202Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
203Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
204Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
205Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
206Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
207Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
208Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
209Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
210Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
211Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
212Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
213Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
214Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
215Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
216Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
217Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
218Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
219Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
220Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
221Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
222Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
223Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
224Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
225Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
226Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
227Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
228Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
229Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
230Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
231Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
232Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
233Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
234Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
235Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
236Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
237Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
238Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
239Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
240Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
241Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
242Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
243Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
244Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
245Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
246Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
247Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
248Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
249Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
250Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
251Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
252Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
253Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
254Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
255Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
256Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
257Evaluation of plasma parameters on PEALD deposited TaCN
258Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
259Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
260Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
261Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
262Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
263Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
264Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
265Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
266Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
267Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
268Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
269Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
270Flexible Memristive Memory Array on Plastic Substrates
271Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
272Formation of aluminum nitride thin films as gate dielectrics on Si(100)
273Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
274Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
275Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
276From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications
277Fully CMOS-compatible titanium nitride nanoantennas
278Fundamental beam studies of radical enhanced atomic layer deposition of TiN
279GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
280Gadolinium nitride films deposited using a PEALD based process
281GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
282GeSbTe deposition for the PRAM application
283Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
284Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
285Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
286Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
287Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
288Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
289Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
290Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
291Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
292Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
293Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
294Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
295Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
296Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
297Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
298Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
299Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
300Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
301Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
302Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
303HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
304HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
305High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
306High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
307High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
308High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
309High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
310High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
311High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
312High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
313High-Reflective Coatings For Ground and Space Based Applications
314High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
315Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
316Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
317Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
318Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
319Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
320Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
321Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
322Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
323Hydrogen plasma-enhanced atomic layer deposition of copper thin films
324Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
325Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
326Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
327Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition
328Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
329Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
330Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
331Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
332Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
333Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
334Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
335Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
336Improved understanding of recombination at the Si/Al2O3 interface
337Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
338Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
339Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
340Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
341Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
342Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
343In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
344In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
345In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
346In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
347In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
348In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
349In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
350In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
351In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
352In-gap states in titanium dioxide and oxynitride atomic layer deposited films
353In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
354Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
355Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
356Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
357Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
358Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
359Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
360Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
361Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
362Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
363Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
364Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
365Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
366Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
367Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
368Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
369Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
370Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
371Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
372Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
373Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
374Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
375Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
376Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
377Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
378Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
379Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
380Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
381Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
382Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
383Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
384Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
385Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
386Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
387Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
388Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
389Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
390Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
391Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
392Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
393Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
394Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
395Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
396Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
397Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
398Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
399Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
400Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
401Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
402Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
403Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
404Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
405Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
406Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
407Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
408Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
409Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
410Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
411Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
412Low temperature temporal and spatial atomic layer deposition of TiO2 films
413Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
414Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
415Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
416Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
417Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
418Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
419Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
420Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
421Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
422Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
423Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
424Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
425Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
426Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
427Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
428Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
429Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
430Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
431Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
432Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
433Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
434Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
435Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
436Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
437MANOS performance dependence on ALD Al2O3 oxidation source
438Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
439Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
440Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
441Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
442Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
443Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
444Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
445Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
446Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
447MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
448Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
449Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
450Nitride memristors
451Nitride passivation of the interface between high-k dielectrics and SiGe
452Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
453Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
454Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
455Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
456Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
457On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
458Optical and Electrical Properties of TixSi1-xOy Films
459Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
460Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
461Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
462Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
463Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
464Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
465Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
466Oxygen migration in TiO2-based higher-k gate stacks
467Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
468PEALD AlN: controlling growth and film crystallinity
469PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
470PEALD of Copper using New Precursors for Next Generation of Interconnections
471PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
472PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
473PEALD ZrO2 Films Deposition on TiN and Si Substrates
474Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
475Perspectives on future directions in III-N semiconductor research
476Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
477Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
478Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
479Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
480Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
481Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
482Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
483Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
484Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
485Plasma enhanced atomic layer deposition of aluminum sulfide thin films
486Plasma enhanced atomic layer deposition of Fe2O3 thin films
487Plasma enhanced atomic layer deposition of Ga2O3 thin films
488Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
489Plasma enhanced atomic layer deposition of gallium sulfide thin films
490Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
491Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
492Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
493Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
494Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
495Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
496Plasma enhanced atomic layer deposition of SiNx:H and SiO2
497Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
498Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
499Plasma enhanced atomic layer deposition of zinc sulfide thin films
500Plasma Enhanced Atomic Layer Deposition on Powders
501Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
502Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
503Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
504Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
505Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
506Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
507Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
508Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
509Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
510Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
511Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
512Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
513Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
514Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
515Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
516Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
517Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
518Plasma-Assisted Atomic Layer Deposition of Palladium
519Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
520Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
521Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
522Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
523Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
524Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
525Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
526Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
527Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
528Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
529Plasma-enhanced ALD system for SRF cavity
530Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
531Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
532Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
533Plasma-enhanced atomic layer deposition for plasmonic TiN
534Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
535Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
536Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
537Plasma-enhanced atomic layer deposition of BaTiO3
538Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
539Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
540Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
541Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
542Plasma-Enhanced Atomic Layer Deposition of Ni
543Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
544Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
545Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
546Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
547Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
548Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
549Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
550Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
551Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
552Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
553Plasma-enhanced atomic layer deposition of superconducting niobium nitride
554Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
555Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
556Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
557Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
558Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
559Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
560Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
561Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
562Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
563Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
564Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
565Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
566Plasma-enhanced atomic layer deposition of titanium vanadium nitride
567Plasma-enhanced atomic layer deposition of tungsten nitride
568Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
569Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
570Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
571Plasma-enhanced atomic layer deposition of vanadium nitride
572Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
573Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
574Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
575Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
576Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
577Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
578Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
579Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
580Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
581Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
582Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
583Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
584Properties of AlN grown by plasma enhanced atomic layer deposition
585Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
586Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
587Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
588Protective capping and surface passivation of III-V nanowires by atomic layer deposition
589Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
590Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
591Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
592Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
593Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
594Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
595Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
596Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
597Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
598Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
599Remote Plasma ALD of Platinum and Platinum Oxide Films
600Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
601Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
602Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
603Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
604Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
605Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
606Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
607Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
608Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
609Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
610Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
611Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
612Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
613Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
614Room temperature atomic layer deposition of TiO2 on gold nanoparticles
615Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
616Room-Temperature Atomic Layer Deposition of Platinum
617Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
618Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
619Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
620RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
621RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
622Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
623Ru thin film grown on TaN by plasma enhanced atomic layer deposition
624Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
625Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
626Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
627Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
628Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
629Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
630Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
631Self-Limiting Growth of GaN at Low Temperatures
632Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
633Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
634Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
635Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
636Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
637Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
638Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
639Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
640Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
641Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
642Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
643Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
644Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
645Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
646Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
647Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
648Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
649Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
650Structural and optical characterization of low-temperature ALD crystalline AlN
651Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
652Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
653Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
654Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
655Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
656Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
657Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy
658Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
659Study on the characteristics of aluminum thin films prepared by atomic layer deposition
660Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
661Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
662Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
663Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
664Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
665Surface and sensing properties of PE-ALD SnO2 thin film
666Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
667Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
668Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
669Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
670Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
671Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
672Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
673Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
674Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
675Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
676TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
677TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
678Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
679Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
680Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
681Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
682Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
683The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
684The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
685The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
686The effects of layering in ferroelectric Si-doped HfO2 thin films
687The effects of plasma treatment on the thermal stability of HfO2 thin films
688The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
689The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
690The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
691The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
692The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
693The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
694The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
695The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
696The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
697The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
698The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
699The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
700Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
701Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
702Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
703Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
704Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition
705Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
706Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
707Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
708Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
709Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
710Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
711TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
712Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
713TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
714Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
715Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
716Trilayer Tunnel Selectors for Memristor Memory Cells
717Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
718Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
719Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
720Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
721Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
722Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
723Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
724Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
725Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
726Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
727Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
728Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
729Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
730Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
731Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
732Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
733Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
734Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
735Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
736Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
737Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
738Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
739Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
740X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
741XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
742ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
743ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
744ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition