Chemical Composition, Impurities Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Chemical Composition, Impurities returned 643 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
9A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
10A route to low temperature growth of single crystal GaN on sapphire
11A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
12A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
13Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
14Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
15Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
16Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
17Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
18Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
19ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
20ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
21ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
22ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
23AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
24Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
25AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
26Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
27Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
28An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
29An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
30An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
31Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
32Analysis of nitrogen species in titanium oxynitride ALD films
33Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
34Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
35Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
36Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
37Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
38Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
39Atmospheric pressure plasma enhanced spatial ALD of silver
40Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
41Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
42Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
43Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
44Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
45Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
46Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
47Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
48Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
49Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
50Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
51Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
52Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
53Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
54Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
55Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
56Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
57Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
58Atomic layer deposition of GaN at low temperatures
59Atomic Layer Deposition of Gold Metal
60Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
61Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
62Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
63Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
64Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
65Atomic layer deposition of metal-oxide thin films on cellulose fibers
66Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
67Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
68Atomic Layer Deposition of Niobium Nitride from Different Precursors
69Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
70Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
71Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
72Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
73Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
74Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
75Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
76Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
77Atomic Layer Deposition of the Solid Electrolyte LiPON
78Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
79Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
80Atomic layer deposition of titanium nitride from TDMAT precursor
81Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
82Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
83Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
84Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
85Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
86Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
87Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
88Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
89Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
90Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
91Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
92Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
93Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
94Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
95Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
96Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
97Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
98Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
99Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
100Characteristics of HfO2 thin films grown by plasma atomic layer deposition
101Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
102Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
103Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
104Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
105Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
106Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
107Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
108Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
109Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
110Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
111Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
112Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
113Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
114Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
115Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
116Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
117Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
118Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
119Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
120Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
121Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
122Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
123Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
124Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
125Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
126Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
127Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
128Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
129Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
130Composite materials and nanoporous thin layers made by atomic layer deposition
131Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
132Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
133Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
134Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
135Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
136Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
137Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
138Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
139Copper-ALD Seed Layer as an Enabler for Device Scaling
140Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
141Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
142Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
143Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
144Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
145Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
146Damage evaluation in graphene underlying atomic layer deposition dielectrics
147Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
148Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
149Densification of Thin Aluminum Oxide Films by Thermal Treatments
150Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
151Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
152Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
153Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
154Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
155Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
156Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
157Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
158Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
159Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
160Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
161Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
162Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
163Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
164Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
165Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
166Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
167Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
168Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
169Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
170Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
171Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
172Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
173Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
174Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
175Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
176Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
177Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
178Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
179Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
180Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
181Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
182Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
183Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
184Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
185Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
186Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
187Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
188Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
189Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
190Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
191Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
192Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
193Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
194Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
195Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
196Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
197Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
198Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
199Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
200Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
201Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
202Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
203Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
204Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
205Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
206Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
207Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
208Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
209Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
210Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
211Evaluation of plasma parameters on PEALD deposited TaCN
212Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
213Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
214Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
215Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
216Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
217Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
218Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
219Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
220Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
221Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
222Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
223Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
224Flexible Memristive Memory Array on Plastic Substrates
225Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
226Formation of aluminum nitride thin films as gate dielectrics on Si(100)
227Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
228Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
229Fully CMOS-compatible titanium nitride nanoantennas
230Fundamental beam studies of radical enhanced atomic layer deposition of TiN
231GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
232Gadolinium nitride films deposited using a PEALD based process
233GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
234Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
235Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
236Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
237Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
238Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
239Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
240Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
241Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
242Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
243Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
244Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
245Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
246Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
247Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
248Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
249Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
250Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
251HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
252HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
253High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
254High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
255High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
256High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
257High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
258High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
259High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
260High-Reflective Coatings For Ground and Space Based Applications
261High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
262Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
263Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
264Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
265Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
266Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
267Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
268Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
269Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
270Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
271Hydrogen plasma-enhanced atomic layer deposition of copper thin films
272Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
273Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
274Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
275Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
276Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
277Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
278Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
279Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
280Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
281Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
282Improved understanding of recombination at the Si/Al2O3 interface
283Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
284Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
285Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
286Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
287In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
288In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
289In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
290In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
291In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
292In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
293In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
294In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
295In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
296In-gap states in titanium dioxide and oxynitride atomic layer deposited films
297In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
298Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
299Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
300Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
301Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
302Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
303Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
304Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
305Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
306Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
307Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
308Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
309Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
310Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
311Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
312Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
313Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
314Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
315Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
316Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
317Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
318Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
319Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
320Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
321Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
322Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
323Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
324Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
325Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
326Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
327Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
328Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
329Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
330Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
331Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
332Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
333Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
334Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
335Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
336Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
337Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
338Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
339Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
340Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
341Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
342Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
343Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
344Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
345Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
346Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
347Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
348Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
349Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
350Low temperature temporal and spatial atomic layer deposition of TiO2 films
351Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
352Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
353Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
354Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
355Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
356Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
357Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
358Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
359Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
360Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
361Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
362Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
363Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
364Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
365Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
366Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
367Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
368Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
369Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
370Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
371Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
372Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
373Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
374Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
375Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
376Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
377Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
378Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
379Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
380MANOS performance dependence on ALD Al2O3 oxidation source
381Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
382Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
383Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
384Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
385Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
386Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
387Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
388Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
389Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
390Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
391Nitride memristors
392Nitride passivation of the interface between high-k dielectrics and SiGe
393Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
394Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
395Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
396Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
397Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
398On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
399Optical and Electrical Properties of TixSi1-xOy Films
400Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
401Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
402Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
403Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
404Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
405Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
406Oxygen migration in TiO2-based higher-k gate stacks
407Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
408PEALD AlN: controlling growth and film crystallinity
409PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
410PEALD of Copper using New Precursors for Next Generation of Interconnections
411PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
412PEALD ZrO2 Films Deposition on TiN and Si Substrates
413Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
414Perspectives on future directions in III-N semiconductor research
415Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
416Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
417Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
418Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
419Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
420Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
421Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
422Plasma enhanced atomic layer deposition of aluminum sulfide thin films
423Plasma enhanced atomic layer deposition of Fe2O3 thin films
424Plasma enhanced atomic layer deposition of Ga2O3 thin films
425Plasma enhanced atomic layer deposition of gallium sulfide thin films
426Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
427Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
428Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
429Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
430Plasma enhanced atomic layer deposition of SiNx:H and SiO2
431Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
432Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
433Plasma enhanced atomic layer deposition of zinc sulfide thin films
434Plasma Enhanced Atomic Layer Deposition on Powders
435Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
436Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
437Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
438Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
439Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
440Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
441Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
442Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
443Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
444Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
445Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
446Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
447Plasma-Assisted Atomic Layer Deposition of Palladium
448Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
449Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
450Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
451Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
452Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
453Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
454Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
455Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
456Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
457Plasma-enhanced ALD system for SRF cavity
458Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
459Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
460Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
461Plasma-enhanced atomic layer deposition for plasmonic TiN
462Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
463Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
464Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
465Plasma-enhanced atomic layer deposition of BaTiO3
466Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
467Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
468Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
469Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
470Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
471Plasma-Enhanced Atomic Layer Deposition of Ni
472Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
473Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
474Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
475Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
476Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
477Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
478Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
479Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
480Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
481Plasma-enhanced atomic layer deposition of superconducting niobium nitride
482Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
483Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
484Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
485Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
486Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
487Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
488Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
489Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
490Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
491Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
492Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
493Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
494Plasma-enhanced atomic layer deposition of titanium vanadium nitride
495Plasma-enhanced atomic layer deposition of tungsten nitride
496Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
497Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
498Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
499Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
500Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
501Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
502Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
503Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
504Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
505Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
506Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
507Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
508Properties of AlN grown by plasma enhanced atomic layer deposition
509Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
510Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
511Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
512Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
513Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
514Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
515Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
516Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
517Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
518Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
519Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
520Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
521Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
522Remote Plasma ALD of Platinum and Platinum Oxide Films
523Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
524Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
525Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
526Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
527Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
528Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
529Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
530Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
531Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
532Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
533Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
534Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
535Room temperature atomic layer deposition of TiO2 on gold nanoparticles
536Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
537Room-Temperature Atomic Layer Deposition of Platinum
538Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
539Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
540RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
541RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
542Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
543Ru thin film grown on TaN by plasma enhanced atomic layer deposition
544Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
545Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
546Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
547Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
548Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
549Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
550Self-Limiting Growth of GaN at Low Temperatures
551Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
552Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
553Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
554Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
555Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
556Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
557Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
558Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
559Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
560Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
561Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
562Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
563Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
564Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
565Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
566Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
567Structural and optical characterization of low-temperature ALD crystalline AlN
568Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
569Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
570Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
571Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
572Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
573Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
574Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
575Study on the characteristics of aluminum thin films prepared by atomic layer deposition
576Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
577Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
578Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
579Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
580Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
581Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
582Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
583Surface and sensing properties of PE-ALD SnO2 thin film
584Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
585Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
586Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
587Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
588Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
589Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
590Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
591TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
592Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
593Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
594Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
595The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
596The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
597The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
598The effects of layering in ferroelectric Si-doped HfO2 thin films
599The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
600The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
601The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
602The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
603The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
604The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
605The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
606The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
607The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
608Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
609Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
610Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
611Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
612Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
613Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
614Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
615TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
616Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
617TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
618Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
619Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
620Trilayer Tunnel Selectors for Memristor Memory Cells
621Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
622Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
623Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
624Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
625Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
626Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
627Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
628Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
629Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
630Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
631Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
632Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
633Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
634Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
635Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
636Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
637Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
638Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
639Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
640X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
641ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
642ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
643ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition


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