| 1 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 2 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 3 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 4 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 5 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 6 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 7 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 8 | A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect |
| 9 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 10 | A route to low temperature growth of single crystal GaN on sapphire |
| 11 | A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment |
| 12 | A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems |
| 13 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 14 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
| 15 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 16 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 17 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
| 18 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 19 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
| 20 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 21 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 22 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 23 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 24 | Alloyed 2D Metal-Semiconductor Atomic Layer Junctions |
| 25 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 26 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 27 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
| 28 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 29 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 30 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
| 31 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
| 32 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 33 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 34 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
| 35 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 36 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
| 37 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
| 38 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
| 39 | Atmospheric pressure plasma enhanced spatial ALD of silver |
| 40 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 41 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
| 42 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 43 | Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects |
| 44 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 45 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 46 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 47 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 48 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
| 49 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 50 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 51 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
| 52 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 53 | Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode |
| 54 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
| 55 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
| 56 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
| 57 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 58 | Atomic layer deposition of GaN at low temperatures |
| 59 | Atomic Layer Deposition of Gold Metal |
| 60 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
| 61 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
| 62 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 63 | Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source |
| 64 | Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries |
| 65 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 66 | Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma |
| 67 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
| 68 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
| 69 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 70 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 71 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 72 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
| 73 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 74 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 75 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
| 76 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 77 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
| 78 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 79 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
| 80 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 81 | Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate |
| 82 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
| 83 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 84 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
| 85 | Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen |
| 86 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 87 | Atomic structure of conducting nanofilaments in TiO2 resistive switching memory |
| 88 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
| 89 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 90 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
| 91 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 92 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 93 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
| 94 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 95 | Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma |
| 96 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 97 | Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl |
| 98 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 99 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 100 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
| 101 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
| 102 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 103 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
| 104 | Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films |
| 105 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
| 106 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
| 107 | Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl |
| 108 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 109 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 110 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
| 111 | Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition |
| 112 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 113 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 114 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
| 115 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
| 116 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
| 117 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
| 118 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 119 | Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8] |
| 120 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 121 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 122 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 123 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 124 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
| 125 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
| 126 | Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition |
| 127 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
| 128 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 129 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 130 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 131 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 132 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 133 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
| 134 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
| 135 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
| 136 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 137 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 138 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
| 139 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
| 140 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 141 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
| 142 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 143 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
| 144 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 145 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 146 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
| 147 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
| 148 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 149 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
| 150 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
| 151 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 152 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 153 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 154 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 155 | Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition |
| 156 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
| 157 | Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte |
| 158 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 159 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 160 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
| 161 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
| 162 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
| 163 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
| 164 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 165 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
| 166 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 167 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 168 | Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride |
| 169 | Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 170 | Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition |
| 171 | Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition |
| 172 | Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper |
| 173 | Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 174 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 175 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 176 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 177 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 178 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
| 179 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
| 180 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
| 181 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 182 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 183 | Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier |
| 184 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 185 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 186 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
| 187 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 188 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 189 | Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD) |
| 190 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 191 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
| 192 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
| 193 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 194 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 195 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
| 196 | Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays |
| 197 | Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes |
| 198 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
| 199 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
| 200 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 201 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 202 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 203 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
| 204 | Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks |
| 205 | Evaluation of plasma parameters on PEALD deposited TaCN |
| 206 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
| 207 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 208 | Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions |
| 209 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 210 | Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition |
| 211 | Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition |
| 212 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 213 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 214 | Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors |
| 215 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
| 216 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
| 217 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 218 | Flexible Memristive Memory Array on Plastic Substrates |
| 219 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
| 220 | Formation of aluminum nitride thin films as gate dielectrics on Si(100) |
| 221 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
| 222 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
| 223 | Fully CMOS-compatible titanium nitride nanoantennas |
| 224 | Fundamental beam studies of radical enhanced atomic layer deposition of TiN |
| 225 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
| 226 | Gadolinium nitride films deposited using a PEALD based process |
| 227 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 228 | Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides |
| 229 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 230 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 231 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
| 232 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
| 233 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
| 234 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
| 235 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 236 | Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition |
| 237 | Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3 |
| 238 | Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant |
| 239 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 240 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 241 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 242 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 243 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 244 | HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method |
| 245 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 246 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 247 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
| 248 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
| 249 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 250 | High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition |
| 251 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 252 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
| 253 | High-Reflective Coatings For Ground and Space Based Applications |
| 254 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
| 255 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
| 256 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
| 257 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 258 | Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures |
| 259 | Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes |
| 260 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 261 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 262 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
| 263 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
| 264 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
| 265 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
| 266 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
| 267 | Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices |
| 268 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 269 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
| 270 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 271 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 272 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 273 | Improved understanding of recombination at the Si/Al2O3 interface |
| 274 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 275 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 276 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 277 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 278 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 279 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
| 280 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
| 281 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
| 282 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
| 283 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 284 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 285 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 286 | Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates |
| 287 | Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces |
| 288 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
| 289 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
| 290 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 291 | Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition |
| 292 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 293 | Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films |
| 294 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 295 | Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition |
| 296 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 297 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 298 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
| 299 | Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon |
| 300 | Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia |
| 301 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 302 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
| 303 | Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment |
| 304 | Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation |
| 305 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 306 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
| 307 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
| 308 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 309 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
| 310 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 311 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 312 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 313 | Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions |
| 314 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
| 315 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization |
| 316 | Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics |
| 317 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
| 318 | Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars |
| 319 | Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition |
| 320 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
| 321 | Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study |
| 322 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
| 323 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 324 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 325 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
| 326 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
| 327 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
| 328 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
| 329 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 330 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 331 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
| 332 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 333 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
| 334 | Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels |
| 335 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
| 336 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 337 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 338 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 339 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
| 340 | Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells |
| 341 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 342 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 343 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
| 344 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 345 | Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma |
| 346 | Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition |
| 347 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 348 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 349 | Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures |
| 350 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 351 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
| 352 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 353 | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide |
| 354 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
| 355 | Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure |
| 356 | Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100) |
| 357 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 358 | Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys |
| 359 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
| 360 | Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing |
| 361 | MANOS performance dependence on ALD Al2O3 oxidation source |
| 362 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 363 | Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors |
| 364 | Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition |
| 365 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect |
| 366 | Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films |
| 367 | Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition |
| 368 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
| 369 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 370 | Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co |
| 371 | Nitride memristors |
| 372 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 373 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
| 374 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
| 375 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 376 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
| 377 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
| 378 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
| 379 | Optical and Electrical Properties of TixSi1-xOy Films |
| 380 | Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition |
| 381 | Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition |
| 382 | Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings |
| 383 | Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study |
| 384 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
| 385 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 386 | Oxygen migration in TiO2-based higher-k gate stacks |
| 387 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
| 388 | PEALD AlN: controlling growth and film crystallinity |
| 389 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
| 390 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
| 391 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 392 | PEALD ZrO2 Films Deposition on TiN and Si Substrates |
| 393 | Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition |
| 394 | Perspectives on future directions in III-N semiconductor research |
| 395 | Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon |
| 396 | Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition |
| 397 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
| 398 | Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 399 | Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate |
| 400 | Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride |
| 401 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 402 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
| 403 | Plasma enhanced atomic layer deposition of Fe2O3 thin films |
| 404 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 405 | Plasma enhanced atomic layer deposition of gallium sulfide thin films |
| 406 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 407 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
| 408 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 409 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 410 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 411 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
| 412 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 413 | Plasma enhanced atomic layer deposition of zinc sulfide thin films |
| 414 | Plasma Enhanced Atomic Layer Deposition on Powders |
| 415 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 416 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
| 417 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 418 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 419 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
| 420 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
| 421 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 422 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 423 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
| 424 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 425 | Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory |
| 426 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
| 427 | Plasma-Assisted Atomic Layer Deposition of Palladium |
| 428 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
| 429 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 430 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 431 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 432 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 433 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
| 434 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
| 435 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
| 436 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 437 | Plasma-enhanced ALD system for SRF cavity |
| 438 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
| 439 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 440 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
| 441 | Plasma-enhanced atomic layer deposition for plasmonic TiN |
| 442 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
| 443 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 444 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 445 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 446 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 447 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 448 | Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films |
| 449 | Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries |
| 450 | Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate |
| 451 | Plasma-Enhanced Atomic Layer Deposition of Ni |
| 452 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
| 453 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 454 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 455 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
| 456 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 457 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
| 458 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 459 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
| 460 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
| 461 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 462 | Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers |
| 463 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 464 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
| 465 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
| 466 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
| 467 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
| 468 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
| 469 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 470 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 471 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 472 | Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries |
| 473 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 474 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 475 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
| 476 | Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S |
| 477 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
| 478 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
| 479 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
| 480 | Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells |
| 481 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
| 482 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 483 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
| 484 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 485 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
| 486 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
| 487 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 488 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 489 | Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells |
| 490 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 491 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 492 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 493 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
| 494 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
| 495 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
| 496 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
| 497 | Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition |
| 498 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
| 499 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 500 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
| 501 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 502 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 503 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 504 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
| 505 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
| 506 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 507 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
| 508 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
| 509 | Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application |
| 510 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
| 511 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
| 512 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 513 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
| 514 | Room temperature atomic layer deposition of TiO2 on gold nanoparticles |
| 515 | Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source |
| 516 | Room-Temperature Atomic Layer Deposition of Platinum |
| 517 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 518 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
| 519 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
| 520 | RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor |
| 521 | Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing |
| 522 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 523 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 524 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 525 | Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 526 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
| 527 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
| 528 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 529 | Self-Limiting Growth of GaN at Low Temperatures |
| 530 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 531 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 532 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
| 533 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
| 534 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 535 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
| 536 | Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| 537 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 538 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 539 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 540 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
| 541 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
| 542 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 543 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 544 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 545 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
| 546 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 547 | Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD |
| 548 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
| 549 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 550 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
| 551 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
| 552 | Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells |
| 553 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
| 554 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
| 555 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 556 | Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films |
| 557 | Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition |
| 558 | Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition |
| 559 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 560 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
| 561 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 562 | Surface and sensing properties of PE-ALD SnO2 thin film |
| 563 | Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte |
| 564 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
| 565 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
| 566 | Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide |
| 567 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 568 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
| 569 | Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition |
| 570 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 571 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
| 572 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
| 573 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 574 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
| 575 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
| 576 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
| 577 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 578 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
| 579 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
| 580 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 581 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 582 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 583 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 584 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 585 | The physical properties of cubic plasma-enhanced atomic layer deposition TaN films |
| 586 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 587 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 588 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 589 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 590 | Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells |
| 591 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 592 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 593 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 594 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 595 | Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests |
| 596 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 597 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
| 598 | Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects |
| 599 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 600 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
| 601 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 602 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 603 | Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting |
| 604 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
| 605 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 606 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 607 | Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition |
| 608 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
| 609 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
| 610 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
| 611 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
| 612 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
| 613 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 614 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 615 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 616 | Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition |
| 617 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 618 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
| 619 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
| 620 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
| 621 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
| 622 | ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition |