Crystallinity, Crystal Structure, Grain Size, Atomic Structure Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
4A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
5A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
6A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
7A route to low temperature growth of single crystal GaN on sapphire
8Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
9Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
10Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
11ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
12ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
13AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
14AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
15Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
16Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
17An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
18Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
19Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
20Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
21Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
22Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
23Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
24Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
25Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
26Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
27Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
28Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
29Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
30Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
31Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
32Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
33Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
34Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
35Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
36Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
37Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
38Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
39Atomic layer deposition of GaN at low temperatures
40Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
41Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
42Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
43Atomic layer deposition of InN using trimethylindium and ammonia plasma
44Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
45Atomic layer deposition of metal-oxide thin films on cellulose fibers
46Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
47Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
48Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
49Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
50Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
51Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
52Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
53Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
54Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
55Atomic layer deposition of titanium nitride for quantum circuits
56Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
57Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
58Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
59Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
60Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
61Atomic layer epitaxy of Si using atomic H
62Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
63Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
64Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
65Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
66Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
67Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
68Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
69Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
70Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
71Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
72Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
73Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
74Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
75Characteristics of HfO2 thin films grown by plasma atomic layer deposition
76Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
77Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
78Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
79Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
80Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
81Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
82Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
83Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
84Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
85Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
86Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
87Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
88Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
89Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
90Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
91Comparative study of ALD SiO2 thin films for optical applications
92Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
93Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
94Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
95Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
96Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
97Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
98Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
99Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
100Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
101Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
102Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
103Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
104Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
105Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
106Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
107Crystalline growth of AlN thin films by atomic layer deposition
108Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
109Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
110Densification of Thin Aluminum Oxide Films by Thermal Treatments
111Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
112Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
113Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
114Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
115Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
116Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
117Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
118Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
119Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
120Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
121Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
122Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
123Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
124Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
125Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
126Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
127Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
128Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
129Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
130Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
131Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
132Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
133Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
134Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
135Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
136Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
137Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
138Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
139Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
140Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
141Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
142Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
143Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
144Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
145Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
146Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
147Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
148Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
149Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
150Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
151Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
152Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
153Evaluation of plasma parameters on PEALD deposited TaCN
154Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
155Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
156Fast PEALD ZnO Thin-Film Transistor Circuits
157Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
158Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
159Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
160Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
161Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
162Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
163Formation of aluminum nitride thin films as gate dielectrics on Si(100)
164Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
165Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
166Fully CMOS-compatible titanium nitride nanoantennas
167Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations
168GeSbTe deposition for the PRAM application
169Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
170Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
171Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
172Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
173Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
174Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
175Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
176Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
177Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
178Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
179Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
180Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
181Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
182Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment
183Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
184Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
185Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method
186Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
187HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
188HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
189High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
190High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
191High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
192High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
193High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
194High-Reflective Coatings For Ground and Space Based Applications
195High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
196Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
197Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
198Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
199Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
200Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
201Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
202Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
203Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
204Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
205Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
206Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
207Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
208In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
209In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
210In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
211In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
212In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
213In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
214Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
215Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
216Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
217Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
218Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
219Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
220Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
221Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
222Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
223Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
224Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
225Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
226Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
227Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
228Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
229Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
230Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
231Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
232Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
233Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
234Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
235Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
236Layer-by-layer epitaxial growth of GaN at low temperatures
237Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
238Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
239Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
240Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
241Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
242Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
243Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
244Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
245Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
246Low temperature plasma enhanced deposition of GaP films on Si substrate
247Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
248Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
249Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
250Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
251Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
252Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
253Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
254Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
255Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
256Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
257Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
258Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
259Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
260Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
261Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
262Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
263Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
264Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
265Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
266Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
267Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
268Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
269Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
270New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
271NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
272Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
273Nitride memristors
274Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
275Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
276Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
277Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
278Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
279Oxygen migration in TiO2-based higher-k gate stacks
280P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
281Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
282PEALD AlN: controlling growth and film crystallinity
283PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
284PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
285PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
286Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
287Perspectives on future directions in III-N semiconductor research
288Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
289Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
290Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
291Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
292Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
293Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
294Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
295Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
296Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
297Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
298Plasma enhanced atomic layer deposition of aluminum sulfide thin films
299Plasma enhanced atomic layer deposition of Fe2O3 thin films
300Plasma enhanced atomic layer deposition of Ga2O3 thin films
301Plasma enhanced atomic layer deposition of gallium sulfide thin films
302Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
303Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
304Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
305Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
306Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
307Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
308Plasma enhanced atomic layer deposition of zinc sulfide thin films
309Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
310Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
311Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
312Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
313Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
314Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
315Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
316Plasma-Assisted Atomic Layer Deposition of Palladium
317Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
318Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
319Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
320Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
321Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
322Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
323Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
324Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
325Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
326Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
327Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
328Plasma-enhanced atomic layer deposition of BaTiO3
329Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
330Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
331Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
332Plasma-Enhanced Atomic Layer Deposition of Ni
333Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
334Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
335Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
336Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
337Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
338Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
339Plasma-enhanced atomic layer deposition of superconducting niobium nitride
340Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
341Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
342Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
343Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
344Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
345Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
346Plasma-enhanced atomic layer deposition of titanium vanadium nitride
347Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
348Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
349Plasma-enhanced atomic layer deposition of vanadium nitride
350Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
351Plasma-Modified Atomic Layer Deposition
352Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
353Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
354Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
355Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
356Properties of AlN grown by plasma enhanced atomic layer deposition
357Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
358Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
359Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
360Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
361Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
362Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
363Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
364Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
365Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
366Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
367Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
368Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
369Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
370Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
371Remote Plasma ALD of Platinum and Platinum Oxide Films
372Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
373Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
374Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
375Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
376Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
377Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
378Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
379Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
380Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
381Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
382Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
383Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
384Room-Temperature Atomic Layer Deposition of Platinum
385Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
386Ru thin film grown on TaN by plasma enhanced atomic layer deposition
387Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
388Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
389Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
390Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
391Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
392Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
393Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
394SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
395Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
396Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
397Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
398Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
399Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
400Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
401Structural and optical characterization of low-temperature ALD crystalline AlN
402Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
403Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
404Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
405Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
406Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
407Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
408Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
409Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
410Study on the characteristics of aluminum thin films prepared by atomic layer deposition
411Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
412Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
413Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
414Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
415Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
416Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
417Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
418Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
419Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
420Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
421Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
422TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
423Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
424Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
425TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
426Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
427Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
428Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
429The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
430The effects of layering in ferroelectric Si-doped HfO2 thin films
431The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
432The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
433The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
434The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
435The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
436The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
437The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
438The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
439The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
440The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
441The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
442Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
443Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
444Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
445Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
446Thin film GaP for solar cell application
447Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
448TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
449TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
450Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
451Tribological properties of thin films made by atomic layer deposition sliding against silicon
452Trilayer Tunnel Selectors for Memristor Memory Cells
453Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
454Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
455Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
456Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
457Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
458Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
459Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
460Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
461Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
462Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
463WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
464Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
465X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
466ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium