Crystallinity, Crystal Structure, Grain Size, Atomic Structure Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
4A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
5A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
6A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
7A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
8A route to low temperature growth of single crystal GaN on sapphire
9Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
10Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
11Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
12ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
13ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
14AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
15AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
16Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
17Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
18An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
19Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
20Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
21Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
22Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
23Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
24Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
25Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
26Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
27Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
28Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
29Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
30Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
31Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
32Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
33Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
34Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
35Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
36Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
37Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
38Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
39Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
40Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
41Atomic layer deposition of GaN at low temperatures
42Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
43Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
44Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
45Atomic layer deposition of InN using trimethylindium and ammonia plasma
46Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
47Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
48Atomic layer deposition of metal-oxide thin films on cellulose fibers
49Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
50Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
51Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
52Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
53Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
54Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
55Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
56Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
57Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
58Atomic layer deposition of titanium nitride for quantum circuits
59Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
60Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
61Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
62Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
63Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
64Atomic layer epitaxy of Si using atomic H
65Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
66Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
67Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
68Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
69Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
70Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
71Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
72Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
73Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
74Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
75Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
76Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
77Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
78Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
79Characteristics of HfO2 thin films grown by plasma atomic layer deposition
80Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
81Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
82Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
83Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
84Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
85Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
86Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
87Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
88Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
89Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
90Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
91Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
92Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
93Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
94Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
95Comparative study of ALD SiO2 thin films for optical applications
96Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
97Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
98Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
99Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
100Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
101Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
102Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
103Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
104Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
105Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
106Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
107Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
108Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
109Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
110Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
111Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
112Crystalline growth of AlN thin films by atomic layer deposition
113Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
114Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
115Densification of Thin Aluminum Oxide Films by Thermal Treatments
116Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
117Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
118Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
119Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
120Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
121Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
122Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
123Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
124Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
125Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
126Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
127Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
128Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
129Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
130Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
131Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
132Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
133Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
134Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
135Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
136Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
137Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
138Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
139Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
140Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
141Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition
142Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
143Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
144Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
145Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
146Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
147Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
148Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
149Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
150Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
151Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
152Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
153Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
154Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
155Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
156Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
157Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
158Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
159Evaluation of plasma parameters on PEALD deposited TaCN
160Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
161Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
162Fast PEALD ZnO Thin-Film Transistor Circuits
163Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
164Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
165Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
166Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
167Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
168Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
169Formation of aluminum nitride thin films as gate dielectrics on Si(100)
170Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
171Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
172From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications
173Fully CMOS-compatible titanium nitride nanoantennas
174Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations
175GeSbTe deposition for the PRAM application
176Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
177Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
178Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
179Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
180Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
181Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
182Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
183Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
184Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
185Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
186Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
187Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
188Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
189Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment
190Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
191Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
192Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method
193Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
194HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
195HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
196High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
197High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
198High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
199High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
200High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
201High-Reflective Coatings For Ground and Space Based Applications
202High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
203Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
204Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
205Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
206Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
207Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
208Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
209Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
210Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
211Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
212Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
213Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
214Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
215In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
216In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
217In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
218In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
219In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
220In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
221In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
222Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
223Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
224Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
225Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
226Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
227Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
228Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
229Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
230Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
231Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
232Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
233Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
234Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
235Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
236Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
237Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
238Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
239Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
240Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
241Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
242Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
243Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
244Layer-by-layer epitaxial growth of GaN at low temperatures
245Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
246Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
247Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
248Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
249Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
250Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
251Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
252Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
253Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
254Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
255Low temperature plasma enhanced deposition of GaP films on Si substrate
256Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
257Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
258Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
259Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
260Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
261Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
262Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
263Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
264Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
265Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
266Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
267Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
268Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
269Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
270Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
271Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
272Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
273Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
274Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
275Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
276Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
277Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
278Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
279New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
280NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
281Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
282Nitride memristors
283Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
284Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
285Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
286Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
287Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
288Oxygen migration in TiO2-based higher-k gate stacks
289P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
290Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
291PEALD AlN: controlling growth and film crystallinity
292PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
293PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
294PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
295Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
296Perspectives on future directions in III-N semiconductor research
297Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
298Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
299Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
300Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
301Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
302Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
303Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
304Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
305Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
306Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
307Plasma enhanced atomic layer deposition of aluminum sulfide thin films
308Plasma enhanced atomic layer deposition of Fe2O3 thin films
309Plasma enhanced atomic layer deposition of Ga2O3 thin films
310Plasma enhanced atomic layer deposition of gallium sulfide thin films
311Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
312Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
313Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
314Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
315Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
316Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
317Plasma enhanced atomic layer deposition of zinc sulfide thin films
318Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
319Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
320Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
321Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
322Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
323Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
324Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
325Plasma-Assisted Atomic Layer Deposition of Palladium
326Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
327Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
328Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
329Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
330Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
331Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
332Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
333Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
334Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
335Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
336Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
337Plasma-enhanced atomic layer deposition of BaTiO3
338Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
339Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
340Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
341Plasma-Enhanced Atomic Layer Deposition of Ni
342Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
343Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
344Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
345Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
346Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
347Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
348Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
349Plasma-enhanced atomic layer deposition of superconducting niobium nitride
350Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
351Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
352Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
353Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
354Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
355Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
356Plasma-enhanced atomic layer deposition of titanium vanadium nitride
357Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
358Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
359Plasma-enhanced atomic layer deposition of vanadium nitride
360Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
361Plasma-Modified Atomic Layer Deposition
362Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
363Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
364Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
365Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
366Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
367Properties of AlN grown by plasma enhanced atomic layer deposition
368Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
369Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
370Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
371Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
372Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
373Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
374Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
375Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
376Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
377Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
378Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
379Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
380Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
381Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
382Remote Plasma ALD of Platinum and Platinum Oxide Films
383Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
384Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
385Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
386Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
387Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
388Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
389Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
390Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
391Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
392Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
393Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
394Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
395Room-Temperature Atomic Layer Deposition of Platinum
396Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
397Ru thin film grown on TaN by plasma enhanced atomic layer deposition
398Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
399Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
400Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
401Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
402Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
403Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
404Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
405SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
406Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
407Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
408Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
409Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
410Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
411Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
412Structural and optical characterization of low-temperature ALD crystalline AlN
413Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
414Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
415Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
416Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
417Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
418Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
419Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
420Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
421Study on the characteristics of aluminum thin films prepared by atomic layer deposition
422Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
423Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
424Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
425Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
426Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
427Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
428Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
429Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
430Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
431Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
432Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
433TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
434Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
435Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
436TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
437Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
438Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
439Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
440The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
441The effects of layering in ferroelectric Si-doped HfO2 thin films
442The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
443The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
444The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
445The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
446The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
447The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
448The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
449The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
450The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
451The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
452The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
453Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
454Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
455Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
456Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery
457Thin film GaP for solar cell application
458Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
459TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
460TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
461Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
462Tribological properties of thin films made by atomic layer deposition sliding against silicon
463Trilayer Tunnel Selectors for Memristor Memory Cells
464Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
465Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
466Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
467Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
468Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
469Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
470Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
471Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
472Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
473Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
474WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
475Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
476X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
477ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium