| 1 | (Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors |
| 2 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 3 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 4 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
| 5 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
| 6 | A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application |
| 7 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
| 8 | A route to low temperature growth of single crystal GaN on sapphire |
| 9 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 10 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
| 11 | Advances in the fabrication of graphene transistors on flexible substrates |
| 12 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
| 13 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 14 | ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices |
| 15 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 16 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 17 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
| 18 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| 19 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
| 20 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
| 21 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 22 | An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor |
| 23 | Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition |
| 24 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
| 25 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
| 26 | Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers |
| 27 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
| 28 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
| 29 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
| 30 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
| 31 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
| 32 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 33 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 34 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
| 35 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 36 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
| 37 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
| 38 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 39 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
| 40 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
| 41 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
| 42 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
| 43 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 44 | Atomic layer deposition of GaN at low temperatures |
| 45 | Atomic Layer Deposition of Gold Metal |
| 46 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
| 47 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
| 48 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 49 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
| 50 | Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source |
| 51 | Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma |
| 52 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
| 53 | Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries |
| 54 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 55 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 56 | Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma |
| 57 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 58 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 59 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
| 60 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
| 61 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
| 62 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 63 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
| 64 | Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection |
| 65 | Atomic layer epitaxy of Si using atomic H |
| 66 | Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis |
| 67 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 68 | Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition |
| 69 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
| 70 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 71 | Biofilm prevention on cochlear implants |
| 72 | Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition |
| 73 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 74 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 75 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 76 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
| 77 | Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films |
| 78 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
| 79 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 80 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
| 81 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 82 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 83 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
| 84 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
| 85 | Comparative study of ALD SiO2 thin films for optical applications |
| 86 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 87 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
| 88 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 89 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 90 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
| 91 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 92 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
| 93 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 94 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
| 95 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
| 96 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
| 97 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
| 98 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 99 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
| 100 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 101 | Crystalline growth of AlN thin films by atomic layer deposition |
| 102 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
| 103 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
| 104 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 105 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
| 106 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
| 107 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 108 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 109 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
| 110 | Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution |
| 111 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
| 112 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
| 113 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
| 114 | Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition |
| 115 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
| 116 | Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing |
| 117 | Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition |
| 118 | Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper |
| 119 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 120 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 121 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
| 122 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
| 123 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 124 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
| 125 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 126 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
| 127 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 128 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 129 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 130 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 131 | Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition |
| 132 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 133 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
| 134 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
| 135 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 136 | Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays |
| 137 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
| 138 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 139 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
| 140 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 141 | Evaluation of plasma parameters on PEALD deposited TaCN |
| 142 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
| 143 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
| 144 | Fast PEALD ZnO Thin-Film Transistor Circuits |
| 145 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 146 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 147 | Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter |
| 148 | Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process |
| 149 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
| 150 | From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications |
| 151 | Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations |
| 152 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
| 153 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 154 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 155 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
| 156 | Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant |
| 157 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 158 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 159 | Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment |
| 160 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
| 161 | Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method |
| 162 | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| 163 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 164 | High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition |
| 165 | High-Reflective Coatings For Ground and Space Based Applications |
| 166 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
| 167 | Highly reflective polymeric substrates functionalized utilizing atomic layer deposition |
| 168 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
| 169 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 170 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
| 171 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 172 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
| 173 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
| 174 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
| 175 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
| 176 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 177 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
| 178 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
| 179 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 180 | Improved understanding of recombination at the Si/Al2O3 interface |
| 181 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
| 182 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 183 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 184 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 185 | In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition |
| 186 | In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition |
| 187 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 188 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
| 189 | Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition |
| 190 | Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces |
| 191 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
| 192 | Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition |
| 193 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 194 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 195 | Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition |
| 196 | Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide |
| 197 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
| 198 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 199 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
| 200 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 201 | Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO |
| 202 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 203 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
| 204 | Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition |
| 205 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
| 206 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
| 207 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 208 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 209 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
| 210 | Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars |
| 211 | Layer-by-layer epitaxial growth of GaN at low temperatures |
| 212 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 213 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
| 214 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
| 215 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
| 216 | Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents |
| 217 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
| 218 | Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation |
| 219 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 220 | Low temperature plasma enhanced deposition of GaP films on Si substrate |
| 221 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 222 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
| 223 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
| 224 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 225 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
| 226 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 227 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 228 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 229 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 230 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 231 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
| 232 | Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology |
| 233 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
| 234 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
| 235 | Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure |
| 236 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 237 | Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing |
| 238 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 239 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 240 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
| 241 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
| 242 | Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition |
| 243 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
| 244 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 245 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
| 246 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 247 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
| 248 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
| 249 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
| 250 | New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping |
| 251 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
| 252 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
| 253 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
| 254 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 255 | Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings |
| 256 | Oxygen migration in TiO2-based higher-k gate stacks |
| 257 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
| 258 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
| 259 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
| 260 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 261 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
| 262 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
| 263 | Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon |
| 264 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
| 265 | Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 266 | Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries |
| 267 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
| 268 | Plasma enhanced atomic layer deposition of Fe2O3 thin films |
| 269 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 270 | Plasma enhanced atomic layer deposition of gallium sulfide thin films |
| 271 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 272 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 273 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
| 274 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 275 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 276 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
| 277 | Plasma enhanced atomic layer deposition of zinc sulfide thin films |
| 278 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
| 279 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 280 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
| 281 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
| 282 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
| 283 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 284 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 285 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 286 | Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory |
| 287 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
| 288 | Plasma-Assisted Atomic Layer Deposition of Palladium |
| 289 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 290 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 291 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
| 292 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
| 293 | Plasma-enhanced ALD system for SRF cavity |
| 294 | Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating |
| 295 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 296 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 297 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 298 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 299 | Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application |
| 300 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
| 301 | Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate |
| 302 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
| 303 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 304 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
| 305 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
| 306 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 307 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
| 308 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 309 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
| 310 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
| 311 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
| 312 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 313 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
| 314 | Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S |
| 315 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
| 316 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 317 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
| 318 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
| 319 | Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers |
| 320 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
| 321 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 322 | Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces |
| 323 | Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells |
| 324 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 325 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 326 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 327 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 328 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
| 329 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
| 330 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
| 331 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
| 332 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
| 333 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 334 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 335 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 336 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 337 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 338 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
| 339 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 340 | Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment |
| 341 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 342 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 343 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 344 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
| 345 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 346 | Room-Temperature Atomic Layer Deposition of Platinum |
| 347 | Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration |
| 348 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 349 | Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 350 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
| 351 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
| 352 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
| 353 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 354 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 355 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 356 | SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance |
| 357 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 358 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
| 359 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 360 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 361 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 362 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
| 363 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
| 364 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 365 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
| 366 | Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition |
| 367 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
| 368 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
| 369 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
| 370 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
| 371 | Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries |
| 372 | Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition |
| 373 | Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice |
| 374 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 375 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
| 376 | The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films |
| 377 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 378 | The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells |
| 379 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 380 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 381 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 382 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
| 383 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 384 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 385 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 386 | Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition |
| 387 | Thickness-dependent electrochemical response of plasma enhanced atomic layer deposited WS2 anodes in Na-ion battery |
| 388 | Thin film GaP for solar cell application |
| 389 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 390 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 391 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
| 392 | Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches |
| 393 | Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects |
| 394 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 395 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 396 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
| 397 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 398 | Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering |
| 399 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
| 400 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
| 401 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 402 | Very high frequency plasma reactant for atomic layer deposition |
| 403 | Water Vapor Treatment of Low-Temperature Deposited SnO2 Electron Selective Layers for Efficient Flexible Perovskite Solar Cells |
| 404 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
| 405 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
| 406 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
| 407 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
| 408 | ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition |
