| 1 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 2 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 3 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 4 | A route to low temperature growth of single crystal GaN on sapphire |
| 5 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
| 6 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
| 7 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
| 8 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 9 | Atmospheric pressure plasma enhanced spatial ALD of silver |
| 10 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 11 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 12 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
| 13 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 14 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 15 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
| 16 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
| 17 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
| 18 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 19 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 20 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
| 21 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 22 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
| 23 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 24 | Atomic layer deposition of titanium nitride for quantum circuits |
| 25 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 26 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 27 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 28 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
| 29 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 30 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
| 31 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 32 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 33 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 34 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 35 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 36 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
| 37 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
| 38 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
| 39 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 40 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
| 41 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 42 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
| 43 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
| 44 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
| 45 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
| 46 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
| 47 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 48 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 49 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 50 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
| 51 | Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition |
| 52 | Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier |
| 53 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
| 54 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
| 55 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 56 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 57 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 58 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 59 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 60 | Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film |
| 61 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
| 62 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
| 63 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 64 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
| 65 | Evaluation of plasma parameters on PEALD deposited TaCN |
| 66 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 67 | Film Uniformity in Atomic Layer Deposition |
| 68 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 69 | Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications |
| 70 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
| 71 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
| 72 | Fully CMOS-compatible titanium nitride nanoantennas |
| 73 | GeSbTe deposition for the PRAM application |
| 74 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 75 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 76 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 77 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 78 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 79 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
| 80 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 81 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 82 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 83 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
| 84 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
| 85 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 86 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
| 87 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
| 88 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 89 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
| 90 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
| 91 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 92 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
| 93 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 94 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 95 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
| 96 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
| 97 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 98 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
| 99 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
| 100 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 101 | Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer |
| 102 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
| 103 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 104 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
| 105 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
| 106 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
| 107 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 108 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
| 109 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 110 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 111 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 112 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
| 113 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
| 114 | Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors |
| 115 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 116 | Nanowire single-photon detectors made of atomic layer-deposited niobium nitride |
| 117 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
| 118 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
| 119 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 120 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 121 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
| 122 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
| 123 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
| 124 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 125 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 126 | Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling |
| 127 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 128 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 129 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 130 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
| 131 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 132 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
| 133 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 134 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 135 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 136 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 137 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 138 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 139 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
| 140 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 141 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 142 | Plasma-Enhanced Atomic Layer Deposition of Ni |
| 143 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
| 144 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 145 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 146 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
| 147 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
| 148 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
| 149 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 150 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 151 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
| 152 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
| 153 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
| 154 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
| 155 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
| 156 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
| 157 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 158 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 159 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 160 | Plasma-enhanced atomic layer deposition of vanadium nitride |
| 161 | Plasma-Modified Atomic Layer Deposition |
| 162 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
| 163 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 164 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 165 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 166 | Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization |
| 167 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 168 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 169 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 170 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 171 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
| 172 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
| 173 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
| 174 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
| 175 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 176 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 177 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 178 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 179 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
| 180 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 181 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
| 182 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 183 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 184 | Room-Temperature Atomic Layer Deposition of Platinum |
| 185 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 186 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 187 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 188 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 189 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
| 190 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 191 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 192 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
| 193 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
| 194 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
| 195 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
| 196 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 197 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
| 198 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
| 199 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 200 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 201 | TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition |
| 202 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
| 203 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
| 204 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
| 205 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 206 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 207 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 208 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 209 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 210 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 211 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 212 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 213 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 214 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 215 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 216 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 217 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
| 218 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
| 219 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 220 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 221 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |