Resistivity, Sheet Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Resistivity, Sheet Resistance returned 243 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
4A route to low temperature growth of single crystal GaN on sapphire
5Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
6Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
7All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
8Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
9Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
10Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
11Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
12Atmospheric pressure plasma enhanced spatial ALD of silver
13Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
14Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
15Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
16Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
17Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
18Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
19Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
20Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
21Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
22Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
23Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
24Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
25Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
26Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
27Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
28Atomic layer deposition of titanium nitride for quantum circuits
29Atomic layer deposition of titanium nitride from TDMAT precursor
30Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
31Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
32Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
33Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
34Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
35Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
36Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
37Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
38Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
39Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
40Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
41Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
42Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
43Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
44Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
45Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
46Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
47Copper-ALD Seed Layer as an Enabler for Device Scaling
48Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
49Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
50Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
51Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
52Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
53Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
54Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
55Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
56Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
57Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
58Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
59Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
60Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
61Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
62Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
63Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
64Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
65Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film
66Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
67Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
68Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
69Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
70Evaluation of plasma parameters on PEALD deposited TaCN
71Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
72Film Uniformity in Atomic Layer Deposition
73Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
74Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
75Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
76Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
77Fully CMOS-compatible titanium nitride nanoantennas
78GeSbTe deposition for the PRAM application
79Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
80Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
81Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
82Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment
83Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
84Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
85High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
86High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
87High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
88High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
89Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
90Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
91Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
92Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
93Hydrogen plasma-enhanced atomic layer deposition of copper thin films
94Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
95Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
96Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
97Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
98Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
99In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
100In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
101In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
102In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
103In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
104Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
105Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
106Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
107Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
108Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
109Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
110Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
111Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
112Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
113Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
114Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
115Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
116Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
117Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
118Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
119Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
120Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
121Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
122Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
123Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
124Microwave properties of superconducting atomic-layer deposited TiN films
125Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
126Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
127Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
128Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
129Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
130PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
131PEALD of Copper using New Precursors for Next Generation of Interconnections
132Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
133Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
134Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
135Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
136Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
137Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
138Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
139Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
140Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
141Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
142Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
143Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
144Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
145Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
146Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
147Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
148Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
149Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
150Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
151Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
152Plasma-Enhanced Atomic Layer Deposition of Ni
153Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
154Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
155Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
156Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
157Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
158Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
159Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
160Plasma-enhanced atomic layer deposition of superconducting niobium nitride
161Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
162Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
163Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
164Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
165Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
166Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
167Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
168Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
169Plasma-enhanced atomic layer deposition of titanium vanadium nitride
170Plasma-enhanced atomic layer deposition of tungsten nitride
171Plasma-enhanced atomic layer deposition of vanadium nitride
172Plasma-Modified Atomic Layer Deposition
173Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
174Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
175Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
176Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
177Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
178Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
179Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
180Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
181Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
182Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
183Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
184Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
185Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
186Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
187Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
188Remote Plasma ALD of Platinum and Platinum Oxide Films
189Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
190Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
191Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
192Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
193Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
194Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
195Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
196Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
197Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
198Room-Temperature Atomic Layer Deposition of Platinum
199Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
200Ru thin film grown on TaN by plasma enhanced atomic layer deposition
201Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
202Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
203Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
204Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
205Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
206Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
207Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
208Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
209Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
210Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
211Study on the characteristics of aluminum thin films prepared by atomic layer deposition
212Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
213Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
214Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
215Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
216TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
217Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
218Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
219Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
220The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
221The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
222The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
223The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
224The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
225The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
226Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
227Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
228Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
229Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
230TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
231Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
232Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
233Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
234Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
235Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
236Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
237Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
238Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
239Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
240Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
241WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
242ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window"