1 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
2 | GeSbTe deposition for the PRAM application |
3 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
4 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
5 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
6 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
7 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
8 | Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films |
9 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
10 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
11 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
12 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
13 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
14 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
15 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
16 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
17 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
18 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
19 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
20 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
21 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
22 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
23 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
24 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
25 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
26 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
27 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
28 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
29 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
30 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
31 | Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer |
32 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
33 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
34 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
35 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
36 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
37 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
38 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
39 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
40 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
41 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
42 | Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition |
43 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
44 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
45 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
46 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
47 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
48 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
49 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
50 | Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization |
51 | Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors |
52 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
53 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
54 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
55 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
56 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
57 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
58 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
59 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
60 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
61 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
62 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
63 | Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors |
64 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
65 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
66 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
67 | TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition |
68 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
69 | Atomic layer deposition of titanium nitride from TDMAT precursor |
70 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
71 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
72 | Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film |
73 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
74 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
75 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
76 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
77 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
78 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
79 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
80 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
81 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
82 | Atomic Layer Deposition of the Conductive Delafossite PtCoO2 |
83 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
84 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
85 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
86 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
87 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
88 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
89 | Plasma-enhanced atomic layer deposition of vanadium nitride |
90 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
91 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
92 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
93 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
94 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
95 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
96 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
97 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
98 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
99 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
100 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
101 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
102 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
103 | Nanowire single-photon detectors made of atomic layer-deposited niobium nitride |
104 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
105 | Atomic layer deposition of titanium nitride for quantum circuits |
106 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
107 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
108 | Microwave properties of superconducting atomic-layer deposited TiN films |
109 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
110 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
111 | High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications |
112 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
113 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
114 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
115 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
116 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
117 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
118 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
119 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
120 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
121 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
122 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
123 | Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling |
124 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
125 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
126 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
127 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
128 | Film Uniformity in Atomic Layer Deposition |
129 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
130 | Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices |
131 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
132 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
133 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
134 | A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition |
135 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
136 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
137 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
138 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
139 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
140 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
141 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
142 | Plasma-enhanced atomic layer deposition of Co on metal surfaces |
143 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
144 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
145 | Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers |
146 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
147 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
148 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
149 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
150 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
151 | Fully CMOS-compatible titanium nitride nanoantennas |
152 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
153 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
154 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
155 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
156 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
157 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
158 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
159 | Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature |
160 | Plasma-enhanced atomic layer deposition of tungsten nitride |
161 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
162 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
163 | Atmospheric pressure plasma enhanced spatial ALD of silver |
164 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
165 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
166 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
167 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
168 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
169 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
170 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
171 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
172 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
173 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
174 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
175 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
176 | Room-Temperature Atomic Layer Deposition of Platinum |
177 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
178 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
179 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
180 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
181 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
182 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
183 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
184 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
185 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
186 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
187 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
188 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
189 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
190 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
191 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
192 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
193 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
194 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
195 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
196 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
197 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
198 | Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications |
199 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
200 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
201 | Evaluation of plasma parameters on PEALD deposited TaCN |
202 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
203 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
204 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
205 | Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment |
206 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
207 | Plasma-Enhanced Atomic Layer Deposition of Ni |
208 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
209 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
210 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
211 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
212 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
213 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
214 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
215 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
216 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
217 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
218 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
219 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
220 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
221 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
222 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
223 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
224 | Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier |
225 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
226 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
227 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
228 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
229 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
230 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
231 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
232 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
233 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
234 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
235 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
236 | Plasma-Modified Atomic Layer Deposition |
237 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
238 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
239 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
240 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
241 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
242 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
243 | Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition |
244 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
245 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
246 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
247 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
248 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
249 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
250 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
251 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
252 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
253 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
254 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
255 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
256 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
257 | A route to low temperature growth of single crystal GaN on sapphire |
258 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
259 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
260 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
261 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
262 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
263 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
264 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |