Resistivity, Sheet Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Resistivity, Sheet Resistance returned 258 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
4A route to low temperature growth of single crystal GaN on sapphire
5Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
6Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
7All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
8Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
9Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
10Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
11Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
12Atmospheric pressure plasma enhanced spatial ALD of silver
13Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
14Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
15Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
16Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
17Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
18Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
19Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
20Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
21Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
22Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
23Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
24Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
25Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
26Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
27Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
28Atomic layer deposition of titanium nitride for quantum circuits
29Atomic layer deposition of titanium nitride from TDMAT precursor
30Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
31Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
32Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
33Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
34Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
35Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
36Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
37Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
38Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
39Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
40Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
41Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
42Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
43Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition
44Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
45Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
46Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
47Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
48Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
49Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
50Copper-ALD Seed Layer as an Enabler for Device Scaling
51Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
52Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
53Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
54Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
55Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
56Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
57Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
58Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
59Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
60Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon
61Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
62Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
63Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
64Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
65Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
66Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
67Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
68Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
69Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
70Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
71Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
72Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film
73Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
74Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
75Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
76Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
77Evaluation of plasma parameters on PEALD deposited TaCN
78Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
79Film Uniformity in Atomic Layer Deposition
80Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
81Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
82Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
83Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
84Fully CMOS-compatible titanium nitride nanoantennas
85GeSbTe deposition for the PRAM application
86Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
87Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
88Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
89Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment
90Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
91Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
92High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
93High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
94High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
95High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
96Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
97Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
98Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
99Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
100Hydrogen plasma-enhanced atomic layer deposition of copper thin films
101Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
102Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
103Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
104Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
105Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
106In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
107In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
108In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
109In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
110In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
111Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
112Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
113Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
114Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
115Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
116Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
117Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
118Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
119Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
120Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
121Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
122Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
123Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
124Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
125Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
126Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
127Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
128Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
129Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
130Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
131Microwave properties of superconducting atomic-layer deposited TiN films
132Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
133Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
134Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
135Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
136Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
137Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
138Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
139PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
140PEALD of Copper using New Precursors for Next Generation of Interconnections
141Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
142Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
143Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
144Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
145Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
146Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
147Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
148Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
149Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
150Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
151Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
152Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
153Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
154Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
155Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
156Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
157Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
158Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
159Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
160Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
161Plasma-enhanced atomic layer deposition of Co on metal surfaces
162Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
163Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
164Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
165Plasma-Enhanced Atomic Layer Deposition of Ni
166Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
167Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
168Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
169Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
170Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
171Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
172Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
173Plasma-enhanced atomic layer deposition of superconducting niobium nitride
174Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
175Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
176Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
177Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
178Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
179Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
180Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
181Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
182Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
183Plasma-enhanced atomic layer deposition of titanium vanadium nitride
184Plasma-enhanced atomic layer deposition of tungsten nitride
185Plasma-enhanced atomic layer deposition of vanadium nitride
186Plasma-Modified Atomic Layer Deposition
187Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
188Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
189Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
190Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
191Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
192Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
193Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
194Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
195Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
196Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
197Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
198Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
199Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
200Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
201Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
202Remote Plasma ALD of Platinum and Platinum Oxide Films
203Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
204Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
205Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
206Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
207Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
208Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
209Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
210Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
211Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
212Room-Temperature Atomic Layer Deposition of Platinum
213Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
214Ru thin film grown on TaN by plasma enhanced atomic layer deposition
215Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
216Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
217Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
218Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
219Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
220Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
221Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
222Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
223Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
224Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
225Study on the characteristics of aluminum thin films prepared by atomic layer deposition
226Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
227Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
228Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
229Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
230TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
231Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
232Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
233Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
234The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
235The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
236The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
237The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
238The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
239The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
240Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
241Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
242Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
243Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
244TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
245Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
246Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
247Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
248Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
249Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
250Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
251Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
252Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
253Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
254Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
255Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
256WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
257ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window"