Resistivity, Sheet Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Resistivity, Sheet Resistance returned 230 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
2A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
3A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
4A route to low temperature growth of single crystal GaN on sapphire
5Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
6Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
7All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
8Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
9Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
10Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
11Atmospheric pressure plasma enhanced spatial ALD of silver
12Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
13Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
14Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
15Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
16Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
17Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
18Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
19Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
20Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
21Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
22Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
23Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
24Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
25Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
26Atomic layer deposition of titanium nitride for quantum circuits
27Atomic layer deposition of titanium nitride from TDMAT precursor
28Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
29Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
30Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
31Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
32Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
33Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
34Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
35Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
36Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
37Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
38Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
39Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
40Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
41Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
42Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
43Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
44Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
45Copper-ALD Seed Layer as an Enabler for Device Scaling
46Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
47Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
48Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
49Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
50Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
51Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
52Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
53Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
54Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
55Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
56Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
57Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
58Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
59Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
60Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
61Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
62Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
63Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film
64Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
65Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
66Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
67Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
68Evaluation of plasma parameters on PEALD deposited TaCN
69Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
70Film Uniformity in Atomic Layer Deposition
71Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
72Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
73Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
74Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
75Fully CMOS-compatible titanium nitride nanoantennas
76GeSbTe deposition for the PRAM application
77Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
78Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
79Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
80Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment
81Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
82Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
83High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
84High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
85High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
86High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
87Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
88Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
89Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
90Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
91Hydrogen plasma-enhanced atomic layer deposition of copper thin films
92Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
93Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
94Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
95Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
96Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
97In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
98In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
99In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
100In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
101Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
102Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
103Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
104Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
105Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
106Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
107Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
108Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
109Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
110Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
111Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
112Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
113Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
114Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
115Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
116Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
117Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
118Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
119Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
120Microwave properties of superconducting atomic-layer deposited TiN films
121Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
122Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
123Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
124Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
125Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
126PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
127PEALD of Copper using New Precursors for Next Generation of Interconnections
128Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
129Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
130Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
131Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
132Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
133Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
134Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
135Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
136Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
137Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
138Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
139Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
140Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
141Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
142Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
143Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
144Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
145Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
146Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
147Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
148Plasma-Enhanced Atomic Layer Deposition of Ni
149Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
150Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
151Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
152Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
153Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
154Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
155Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
156Plasma-enhanced atomic layer deposition of superconducting niobium nitride
157Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
158Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
159Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
160Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
161Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
162Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
163Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
164Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
165Plasma-enhanced atomic layer deposition of titanium vanadium nitride
166Plasma-enhanced atomic layer deposition of tungsten nitride
167Plasma-enhanced atomic layer deposition of vanadium nitride
168Plasma-Modified Atomic Layer Deposition
169Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
170Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
171Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
172Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
173Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
174Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
175Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
176Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
177Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
178Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
179Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
180Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
181Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
182Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
183Remote Plasma ALD of Platinum and Platinum Oxide Films
184Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
185Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
186Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
187Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
188Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
189Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
190Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
191Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
192Room-Temperature Atomic Layer Deposition of Platinum
193Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
194Ru thin film grown on TaN by plasma enhanced atomic layer deposition
195Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
196Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
197Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
198Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
199Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
200Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
201Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
202Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
203Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
204Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
205Study on the characteristics of aluminum thin films prepared by atomic layer deposition
206Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
207Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
208Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
209TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
210Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
211The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
212The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
213The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
214The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
215The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
216The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
217Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
218Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
219Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
220Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
221TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
222Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
223Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
224Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
225Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
226Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
227Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
228Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
229WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications