Leakage Current Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Leakage Current returned 163 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
4Advances in the fabrication of graphene transistors on flexible substrates
5Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
7An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
8An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
9Annealing behavior of ferroelectric Si-doped HfO2 thin films
10Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
11Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
12Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
13Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
14Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
15Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
16Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
17Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
18Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
19Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
20Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
21Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
22Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
23Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
24Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
25Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
26Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
27Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
28Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
29Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
30Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
31Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
32Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
33Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
34Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
35Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
36Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
37Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
38Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
39Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
40Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
41Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
42Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
43Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
44Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
45Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
46Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
47Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
48Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
49Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
50Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
51Electronic Conduction Mechanisms in Insulators
52Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
53Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
54Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
55Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
56Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
57Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
58Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
59Fast Flexible Plastic Substrate ZnO Circuits
60Fast PEALD ZnO Thin-Film Transistor Circuits
61Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
62Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
63Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
64Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
65Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
66Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
67HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
68High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
69High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
70High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
71High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
72High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
73Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
74Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
75Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
76Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
77Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
78Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
79Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
80Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
81Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
82Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
83In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
84In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
85In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
86In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
87In-gap states in titanium dioxide and oxynitride atomic layer deposited films
88Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
89Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
90Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
91Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
92Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
93Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
94Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
95Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
96Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
97Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
98Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
99Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
100Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
101Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
102Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
103Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
104Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
105MANOS performance dependence on ALD Al2O3 oxidation source
106Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
107Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
108Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
109Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
110Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
111Optical and Electrical Properties of AlxTi1-xO Films
112Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
113Oxygen migration in TiO2-based higher-k gate stacks
114PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
115Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
116Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
117Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
118Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
119Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
120Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
121Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
122Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
123Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
124Plasma-enhanced atomic layer deposition of BaTiO3
125Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
126Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
127Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
128Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
129Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
130Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
131Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
132Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
133Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
134Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
135Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
136Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
137Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
138Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
139Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
140Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
141Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
142Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
143Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
144Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
145Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
146Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
147Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
148Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
149Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
150Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
151Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
152The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
153The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
154The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
155The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
156Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
157Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
158Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
159TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
160Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
161Very high frequency plasma reactant for atomic layer deposition
162ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
163ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


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