Leakage Current Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Leakage Current returned 176 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3	A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
4	Advances in the fabrication of graphene transistors on flexible substrates
5	Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
7	An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
8	An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
9	Annealing behavior of ferroelectric Si-doped HfO2 thin films
10	Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
11	Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
12	Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
13	Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
14	Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
15	Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
16	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
17	Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
18	Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
19	Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
20	Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
21	Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
22	Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
23	Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
24	Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
25	Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
26	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
27	Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
28	Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
29	Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
30	Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
31	Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
32	Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
33	Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
34	Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
35	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
36	Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
37	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
38	Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
39	Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
40	Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
41	Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
42	Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
43	Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
44	Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
45	Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
46	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
47	Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
48	Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
49	Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
50	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
51	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
52	Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
53	Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
54	Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
55	Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
56	Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
57	Electronic Conduction Mechanisms in Insulators
58	Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
59	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
60	Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
61	Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
62	Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
63	Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
64	Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
65	Fast Flexible Plastic Substrate ZnO Circuits
66	Fast PEALD ZnO Thin-Film Transistor Circuits
67	Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
68	Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
69	Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
70	Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
71	Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
72	Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
73	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
74	High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
75	High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
76	High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
77	High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
78	High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
79	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
80	Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
81	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
82	Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
83	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
84	Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
85	Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
86	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
87	Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
88	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
89	In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
90	In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
91	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
92	In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
93	In-gap states in titanium dioxide and oxynitride atomic layer deposited films
94	Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
95	Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
96	Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
97	Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
98	Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
99	Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
100	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
101	Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
102	Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
103	Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
104	Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
105	Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
106	Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
107	Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
108	Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
109	Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
110	Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
111	Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
112	Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
113	MANOS performance dependence on ALD Al2O3 oxidation source
114	Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
115	Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
116	Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
117	Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
118	Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
119	Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
120	Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
121	Optical and Electrical Properties of AlxTi1-xO Films
122	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
123	Oxygen migration in TiO2-based higher-k gate stacks
124	PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
125	Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
126	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
127	Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
128	Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
129	Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
130	Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
131	Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
132	Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
133	Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
134	Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
135	Plasma-enhanced atomic layer deposition of BaTiO3
136	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
137	Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
138	Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
139	Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
140	Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
141	Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
142	Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
143	Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
144	Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
145	Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
146	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
147	Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
148	Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
149	Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
150	Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
151	Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
152	Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
153	Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
154	Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
155	Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
156	Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
157	Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
158	Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
159	Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
160	Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
161	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
162	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
163	Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
164	The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
165	The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
166	The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
167	The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
168	Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
169	Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
170	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
171	Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
172	TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
173	Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
174	Very high frequency plasma reactant for atomic layer deposition
175	ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
176	ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

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