Leakage Current Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Leakage Current returned 186 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
4A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
5Advances in the fabrication of graphene transistors on flexible substrates
6Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
7AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
8An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
9An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
10Annealing behavior of ferroelectric Si-doped HfO2 thin films
11Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
12Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
13Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
14Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
15Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
16Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
17Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
18Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
19Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
20Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
21Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
22Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
23Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
24Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
25Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
26Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
27Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
28Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
29Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
30Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
31Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
32Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
33Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
34Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
35Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
36Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
37Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
38Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
39Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
40Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
41Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
42Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
43Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
44Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
45Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
46Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
47Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
48Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
49Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
50Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
51Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
52Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
53Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
54Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
55Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
56Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
57Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
58Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
59Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
60Electronic Conduction Mechanisms in Insulators
61Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
62Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
63Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
64Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
65Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
66Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
67Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
68Fast Flexible Plastic Substrate ZnO Circuits
69Fast PEALD ZnO Thin-Film Transistor Circuits
70Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
71Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
72Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
73Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
74Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
75Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
76HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
77High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
78High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
79High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
80High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
81High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
82High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
83Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
84Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
85Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
86Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
87Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
88Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
89Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
90Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
91Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
92Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
93Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
94In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
95In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
96In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
97In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
98In-gap states in titanium dioxide and oxynitride atomic layer deposited films
99Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
100Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
101Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
102Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
103Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
104Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
105Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
106Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
107Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
108Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
109Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
110Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
111Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
112Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
113Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
114Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
115Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
116Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
117Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
118Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
119Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
120MANOS performance dependence on ALD Al2O3 oxidation source
121Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
122Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
123Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
124Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
125Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
126Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
127Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
128Optical and Electrical Properties of AlxTi1-xO Films
129Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
130Oxygen migration in TiO2-based higher-k gate stacks
131PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
132PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
133Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
134Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
135Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
136Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
137Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
138Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
139Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
140Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
141Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
142Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
143Plasma-enhanced atomic layer deposition of BaTiO3
144Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
145Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
146Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
147Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
148Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
149Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
150Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
151Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
152Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
153Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
154Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
155Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
156Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
157Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
158Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
159Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
160Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
161Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
162Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
163Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
164Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
165Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
166Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
167Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
168Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
169Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
170Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
171Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
172The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
173The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
174The effects of plasma treatment on the thermal stability of HfO2 thin films
175The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
176The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
177The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
178Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
179Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
180Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
181Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
182TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
183Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
184Very high frequency plasma reactant for atomic layer deposition
185ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
186ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


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