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Leakage Current Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Leakage Current returned 135 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3Advances in the fabrication of graphene transistors on flexible substrates
4AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
5An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
6An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
7Annealing behavior of ferroelectric Si-doped HfO2 thin films
8Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
9Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
10Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
11Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
12Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
13Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
14Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
15Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
16Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
17Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
18Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
19Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
20Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
21Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
22Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
23Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
24Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
25Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
26Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
27Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
28Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
29Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
30Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
31Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
32Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
33Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
34Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
35Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
36Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
37Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
38Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
39Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
40Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
41Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
42Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
43Fast Flexible Plastic Substrate ZnO Circuits
44Fast PEALD ZnO Thin-Film Transistor Circuits
45Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
46Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
47Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
48Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
49Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
50Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
51HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
52High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
53High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
54High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
55High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
56High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
57Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
58Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
59Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
60Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
61Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
62Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
63Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
64Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
65Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
66Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
67In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
68In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
69In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
70In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
71Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
72Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
73Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
74Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
75Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
76Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
77Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
78Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
79Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
80Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
81Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
82Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
83Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
84Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
85MANOS performance dependence on ALD Al2O3 oxidation source
86Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
87Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
88Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
89Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
90Optical and Electrical Properties of AlxTi1-xO Films
91Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
92Oxygen migration in TiO2-based higher-k gate stacks
93Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
94Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
95Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
96Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
97Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
98Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
99Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
100Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
101Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
102Plasma-enhanced atomic layer deposition of BaTiO3
103Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
104Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
105Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
106Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
107Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
108Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
109Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
110Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
111Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
112Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
113Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
114Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
115Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
116Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
117Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
118Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
119Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
120Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
121Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
122Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
123Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
124Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
125The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
126The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
127The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
128The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
129Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
130Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
131Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
132TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
133Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
134Very high frequency plasma reactant for atomic layer deposition
135ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

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I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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