| 1 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 2 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 3 | A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment |
| 4 | Advances in the fabrication of graphene transistors on flexible substrates |
| 5 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 6 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 7 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 8 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 9 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 10 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 11 | Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC |
| 12 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 13 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
| 14 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
| 15 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
| 16 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 17 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
| 18 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
| 19 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 20 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 21 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
| 22 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
| 23 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 24 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 25 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 26 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 27 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
| 28 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
| 29 | Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates |
| 30 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 31 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 32 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 33 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
| 34 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 35 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 36 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 37 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 38 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 39 | Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 40 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 41 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
| 42 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 43 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
| 44 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 45 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 46 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 47 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 48 | Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD) |
| 49 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
| 50 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 51 | Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks |
| 52 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 53 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
| 54 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 55 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 56 | Fast Flexible Plastic Substrate ZnO Circuits |
| 57 | Fast PEALD ZnO Thin-Film Transistor Circuits |
| 58 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 59 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 60 | Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED |
| 61 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
| 62 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
| 63 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 64 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 65 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 66 | High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films |
| 67 | High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD |
| 68 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 69 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
| 70 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 71 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
| 72 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 73 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 74 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 75 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 76 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 77 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 78 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 79 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 80 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 81 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
| 82 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 83 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 84 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 85 | Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates |
| 86 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 87 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
| 88 | Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN |
| 89 | Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films |
| 90 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
| 91 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 92 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 93 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 94 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
| 95 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 96 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
| 97 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
| 98 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
| 99 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 100 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 101 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 102 | MANOS performance dependence on ALD Al2O3 oxidation source |
| 103 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 104 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
| 105 | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors |
| 106 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 107 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 108 | Optical and Electrical Properties of AlxTi1-xO Films |
| 109 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 110 | Oxygen migration in TiO2-based higher-k gate stacks |
| 111 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 112 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 113 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 114 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 115 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
| 116 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 117 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 118 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 119 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
| 120 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 121 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 122 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 123 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
| 124 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 125 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 126 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
| 127 | Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability |
| 128 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 129 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 130 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
| 131 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 132 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 133 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 134 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 135 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
| 136 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 137 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
| 138 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 139 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 140 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
| 141 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 142 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 143 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
| 144 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 145 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 146 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 147 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 148 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
| 149 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
| 150 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 151 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 152 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 153 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 154 | Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications |
| 155 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 156 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 157 | Very high frequency plasma reactant for atomic layer deposition |
| 158 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
| 159 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |