Leakage Current Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Leakage Current returned 224 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
2Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
3Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
4Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
5Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
7Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
8Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
9Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
10Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
11Experimental and theoretical determination of the role of ions in atomic layer annealing
12Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
13Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
14Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
15The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
16Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
17Plasma-enhanced atomic layer deposition of BaTiO3
18Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
19PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
20TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
21CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories
22Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
23Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
24Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
25Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
26Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
27A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
28Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
29Electronic Conduction Mechanisms in Insulators
30Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
31Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
32Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
33Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
34Fast PEALD ZnO Thin-Film Transistor Circuits
35In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
36Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
37Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
38Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
39High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
40Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
41High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
42Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
43Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
44Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
45ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
46Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
47Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
48Innovative remote plasma source for atomic layer deposition for GaN devices
49AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
50Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
51Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
52A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
53Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
54Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
55Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
56Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
57Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
58Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
59Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
60Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
61Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
62Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
63Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
64Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
65High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
66Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
67Very high frequency plasma reactant for atomic layer deposition
68Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
69Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
70Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
71Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
72Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
73Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
74Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
75Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
76A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
77Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
78Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
79Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
80Annealing behavior of ferroelectric Si-doped HfO2 thin films
81Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
82Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
83Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
84Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
85Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
86Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
87Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
88Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
89In-gap states in titanium dioxide and oxynitride atomic layer deposited films
90Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
91Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
92The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
93Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
94Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
95Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
96Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
97Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
98Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
99Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
100Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
101Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
102Fast Flexible Plastic Substrate ZnO Circuits
103Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
104Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
105Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers
106Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
107Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
108In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
109High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
110Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
111Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
112MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
113Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
114Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
115Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
116Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
117Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
118Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
119Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
120Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
121ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
122Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
123Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
124Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
125Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
126Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
127Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
128Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
129An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
130Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
131Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
132Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
133Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
134Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
135Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
136Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
137Advances in the fabrication of graphene transistors on flexible substrates
138Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
139Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
140Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
141Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
142Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
143Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
144Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
145Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
146Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
147An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
148Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
149In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
150Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
151Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
152Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
153Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
154PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
155MANOS performance dependence on ALD Al2O3 oxidation source
156A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
157Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
158Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
159Oxygen migration in TiO2-based higher-k gate stacks
160AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
161Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
162Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
163Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
164Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
165High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
166Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
167Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
168Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
169Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
170High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
171The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
172ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
173Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
174Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
175HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
176Optical and Electrical Properties of AlxTi1-xO Films
177Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
178Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
179Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
180Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
181Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
182Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
183Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
184Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
185The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
186Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
187Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
188Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
189Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
190Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
191Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
192Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
193Sub-nanometer heating depth of atomic layer annealing
194Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
195Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
196Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
197Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
198Carbon content control of silicon oxycarbide film with methane containing plasma
199Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
200Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition
201Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
202The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
203Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
204Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
205Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
206Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
207Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
208Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
209Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
210The effects of plasma treatment on the thermal stability of HfO2 thin films
211A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
212In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
213Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
214Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
215Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
216Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
217Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
218Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
219Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
220Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
221Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
222Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
223Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
224Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates