| 1 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 2 | A route to low temperature growth of single crystal GaN on sapphire |
| 3 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
| 4 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
| 5 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 6 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 7 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 8 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 9 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 10 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 11 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
| 12 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 13 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 14 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
| 15 | Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries |
| 16 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 17 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 18 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 19 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 20 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 21 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 22 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 23 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
| 24 | Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition |
| 25 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 26 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 27 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
| 28 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 29 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 30 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 31 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 32 | Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition |
| 33 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 34 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
| 35 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 36 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 37 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| 38 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 39 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 40 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
| 41 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 42 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 43 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 44 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
| 45 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 46 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
| 47 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 48 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 49 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 50 | High-Reflective Coatings For Ground and Space Based Applications |
| 51 | Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures |
| 52 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
| 53 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 54 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 55 | Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition |
| 56 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 57 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 58 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
| 59 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 60 | Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions |
| 61 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 62 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
| 63 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
| 64 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 65 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
| 66 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 67 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 68 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 69 | Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition |
| 70 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 71 | Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures |
| 72 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
| 73 | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide |
| 74 | Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100) |
| 75 | Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys |
| 76 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
| 77 | Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range |
| 78 | Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition |
| 79 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 80 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 81 | Optical and Electrical Properties of AlxTi1-xO Films |
| 82 | Optical and Electrical Properties of TixSi1-xOy Films |
| 83 | Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition |
| 84 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 85 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 86 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 87 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
| 88 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 89 | Plasma enhanced atomic layer deposition of gallium sulfide thin films |
| 90 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 91 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 92 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 93 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 94 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
| 95 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 96 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
| 97 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
| 98 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
| 99 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
| 100 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
| 101 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
| 102 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
| 103 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
| 104 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 105 | Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries |
| 106 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
| 107 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 108 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
| 109 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 110 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 111 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 112 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
| 113 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
| 114 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
| 115 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 116 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 117 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 118 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 119 | Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition |
| 120 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
| 121 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
| 122 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 123 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
| 124 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 125 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 126 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 127 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 128 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
| 129 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 130 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 131 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 132 | Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition |
| 133 | Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition |
| 134 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 135 | Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide |
| 136 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 137 | Thin film GaP for solar cell application |
| 138 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 139 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 140 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
| 141 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |