| 1 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 2 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 3 | A route to low temperature growth of single crystal GaN on sapphire |
| 4 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
| 5 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 6 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| 7 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 8 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
| 9 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 10 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 11 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 12 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 13 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 14 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 15 | Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma |
| 16 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
| 17 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 18 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
| 19 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 20 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 21 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 22 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 23 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 24 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 25 | Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma |
| 26 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 27 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
| 28 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
| 29 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 30 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
| 31 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
| 32 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 33 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
| 34 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 35 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 36 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
| 37 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 38 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 39 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
| 40 | Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films |
| 41 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 42 | Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film |
| 43 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 44 | Evaluation of plasma parameters on PEALD deposited TaCN |
| 45 | Evaluation of Stress Induced by Plasma Assisted ALD SiN Film |
| 46 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 47 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
| 48 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
| 49 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 50 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 51 | High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films |
| 52 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
| 53 | High-Reflective Coatings For Ground and Space Based Applications |
| 54 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
| 55 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
| 56 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 57 | Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces |
| 58 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 59 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 60 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 61 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 62 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 63 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 64 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 65 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 66 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 67 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 68 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
| 69 | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide |
| 70 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 71 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 72 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 73 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 74 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
| 75 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 76 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 77 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 78 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 79 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
| 80 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 81 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 82 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
| 83 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 84 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
| 85 | Plasma-Assisted Atomic Layer Deposition of Palladium |
| 86 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
| 87 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
| 88 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
| 89 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 90 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 91 | Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries |
| 92 | Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate |
| 93 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 94 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 95 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
| 96 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 97 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 98 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
| 99 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
| 100 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
| 101 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
| 102 | Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries |
| 103 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 104 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
| 105 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
| 106 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
| 107 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 108 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 109 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 110 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 111 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 112 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 113 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
| 114 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
| 115 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 116 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 117 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 118 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 119 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 120 | Room-Temperature Atomic Layer Deposition of Platinum |
| 121 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
| 122 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 123 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 124 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 125 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 126 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
| 127 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 128 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 129 | Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte |
| 130 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 131 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
| 132 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 133 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 134 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 135 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 136 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
| 137 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
| 138 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |