| 1 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
| 2 | Plasma-Enhanced Atomic Layer Deposition of Ni |
| 3 | Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors |
| 4 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
| 5 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 6 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 7 | Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices |
| 8 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 9 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 10 | Atmospheric pressure plasma enhanced spatial ALD of silver |
| 11 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
| 12 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
| 13 | High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications |
| 14 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
| 15 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 16 | Film Uniformity in Atomic Layer Deposition |
| 17 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 18 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 19 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 20 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
| 21 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 22 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
| 23 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 24 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
| 25 | Room-Temperature Atomic Layer Deposition of Platinum |
| 26 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 27 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 28 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
| 29 | GeSbTe deposition for the PRAM application |
| 30 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
| 31 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 32 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
| 33 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
| 34 | Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors |
| 35 | Atomic layer deposition of titanium nitride for quantum circuits |
| 36 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 37 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 38 | Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry |
| 39 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
| 40 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 41 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
| 42 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
| 43 | A route to low temperature growth of single crystal GaN on sapphire |
| 44 | Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition |
| 45 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 46 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
| 47 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
| 48 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
| 49 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
| 50 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 51 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
| 52 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 53 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 54 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 55 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 56 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
| 57 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 58 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
| 59 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
| 60 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
| 61 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
| 62 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
| 63 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 64 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
| 65 | Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature |
| 66 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 67 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 68 | Plasma-enhanced atomic layer deposition of Co on metal surfaces |
| 69 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 70 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
| 71 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 72 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 73 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
| 74 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
| 75 | Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications |
| 76 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
| 77 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 78 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
| 79 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
| 80 | Fully CMOS-compatible titanium nitride nanoantennas |
| 81 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 82 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
| 83 | Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier |
| 84 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 85 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 86 | Nanowire single-photon detectors made of atomic layer-deposited niobium nitride |
| 87 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
| 88 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
| 89 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
| 90 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 91 | Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film |
| 92 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 93 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
| 94 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 95 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |
| 96 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 97 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
| 98 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
| 99 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
| 100 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 101 | Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment |
| 102 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 103 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 104 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
| 105 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
| 106 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 107 | Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition |
| 108 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 109 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
| 110 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 111 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 112 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 113 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 114 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
| 115 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 116 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
| 117 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 118 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
| 119 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
| 120 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 121 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
| 122 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
| 123 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
| 124 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 125 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 126 | Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate |
| 127 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
| 128 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 129 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
| 130 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 131 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 132 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
| 133 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
| 134 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 135 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 136 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 137 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 138 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 139 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
| 140 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 141 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
| 142 | Atomic Layer Deposition of the Conductive Delafossite PtCoO2 |
| 143 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 144 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
| 145 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 146 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 147 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
| 148 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 149 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 150 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 151 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
| 152 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
| 153 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
| 154 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 155 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 156 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
| 157 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 158 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 159 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
| 160 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 161 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 162 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
| 163 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 164 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 165 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
| 166 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
| 167 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
| 168 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 169 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 170 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
| 171 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
| 172 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
| 173 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
| 174 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
| 175 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
| 176 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
| 177 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 178 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 179 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
| 180 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 181 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
| 182 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
| 183 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
| 184 | Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization |
| 185 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 186 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 187 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 188 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 189 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 190 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
| 191 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 192 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 193 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
| 194 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 195 | A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition |
| 196 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 197 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
| 198 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 199 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
| 200 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
| 201 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 202 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
| 203 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 204 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 205 | Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma |
| 206 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 207 | TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition |
| 208 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
| 209 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 210 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
| 211 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 212 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 213 | Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition |
| 214 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
| 215 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
| 216 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
| 217 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
| 218 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 219 | Plasma-Modified Atomic Layer Deposition |
| 220 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 221 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 222 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 223 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
| 224 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 225 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
| 226 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
| 227 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 228 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
| 229 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
| 230 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 231 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
| 232 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 233 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 234 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 235 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 236 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 237 | Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers |
| 238 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 239 | Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride |
| 240 | Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling |
| 241 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 242 | Plasma-enhanced atomic layer deposition of vanadium nitride |
| 243 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 244 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 245 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 246 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
| 247 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
| 248 | Evaluation of plasma parameters on PEALD deposited TaCN |
| 249 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 250 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
| 251 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 252 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
| 253 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 254 | Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer |
| 255 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
| 256 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 257 | Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer |
| 258 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 259 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
| 260 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 261 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 262 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
| 263 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
| 264 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
| 265 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 266 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
| 267 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 268 | Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films |
| 269 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 270 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 271 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
