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Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing

Type:
Journal
Info:
J. Mater. Chem. C, 2018, 6, 3917-3926
Date:
2018-03-12
DOI:
http://dx.doi.org/10.1039/C7TC05961B

Author Information

Name Institution
Saurabh KarwalEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
B. L. WilliamsEindhoven University of Technology
Tahsin FarazEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology

Films

Plasma HfNx

Hardware used: Oxford Instruments FlexAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 450C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: JEOL JEM ARM 200

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL JEM ARM 200

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL JEM ARM 200

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Sigma

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: Tencor FLX-2320 A

Substrates

SiO2

Notes

450C chuck corresponds to 340C substrate according to SE.
1295