Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM, CAS# 941596-80-1

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s).

NumberTitle
1Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
2Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
3Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
4Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
5Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
6Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
7Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
8Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
9Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
10Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
11Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
12Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
13Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2