About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM, CAS# 941596-80-1

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s).

NumberTitle
1Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
2Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
3Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
4Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
5Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
6Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
7Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
8Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
9Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
10Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
11Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
12Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
13Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies