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Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions

Type:
Journal
Info:
Nanoscale, 2021, 13, 10092
Date:
2021-05-25
DOI:
http://dx.doi.org/10.1039/D0NR08921D

Author Information

Name Institution
Saurabh KarwalEindhoven University of Technology
Bora KarasuluUniversity of Warwick
Harm C. M. KnoopsEindhoven University of Technology
Vincent VandalonEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology

Films

Plasma HfNx

Hardware used: Oxford Instruments FlexAL
Tris(dimethylamido)cyclopentadienyl Hafnium, HfCp(NMe2)3, Air Liquide HyALDTM
CAS#: 941596-80-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 450C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

SiO2

Notes

1587