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Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 01A124 (2013)
Date:
2012-11-02
DOI:
http://dx.doi.org/10.1116/1.4767813

Author Information

Name Institution
Tae-Hoon JungDankook University
Jin-Seong ParkDankook University
Dong-Ho KimKorea Institute of Materials Science
Yongsoo JeongKorea Institute of Materials Science
Sung-Gyu ParkKorea Institute of Materials Science
Jung-Dae KwonKorea Institute of Materials Science

Films

Other ZnO

Hardware used: NCD Technology Lucida MP-100
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Diagnostic: Ecopia HMS-3000

Characteristic: Carrier Concentration
Analysis: van der Pauw sheet resistance
Diagnostic: Ecopia HMS-3000

Characteristic: Mobility
Analysis: van der Pauw sheet resistance
Diagnostic: Ecopia HMS-3000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon
Glass

Notes

642