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Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 10 (1) D13-D16 (2007)
Date:
2006-08-22
DOI:
http://dx.doi.org/10.1149/1.2388249

Author Information

Name Institution
Nicole E. LayRensselaer Polytechnic Institute (RPI)
Gregory A. Ten EyckRensselaer Polytechnic Institute (RPI)
David J. DuquetteRensselaer Polytechnic Institute (RPI)
Toh-Ming LuRensselaer Polytechnic Institute (RPI)

Films

Plasma Pd

Hardware used: Custom Remote Inductively Coupled Plasma
palladium(II) hexafluoroacetylacetonate, Pd(hfac)2
CAS#: 64916-48-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 85C

Film/Plasma Properties

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: Custom

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Substrates

TaN

Notes

1320