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PEALD of Copper using New Precursors for Next Generation of Interconnections

Type:
Journal
Info:
ALD 2010 Poster
Date:
2010-06-20
DOI:
http://dx.doi.org/

Author Information

Name Institution
Jiajun MaoState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany
Vincent OmarjeeAir Liquide
Andrey KorolevAir Liquide
Clement Lansalot-MatrasAir Liquide
Christian DussarratAir Liquide

Films

Plasma Cu

Hardware used: Unknown
Cuprum
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Cu

Hardware used: Unknown
Abacus
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Precursor Characterization
Analysis: Vapor Pressure
Diagnostic: -

Characteristic: Precursor Characterization
Analysis: Melting Point
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Substrates

Ru
SiO2
TaN

Notes

Precursor data.
700