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Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers

Type:
Conference Proceedings
Info:
ECS Transactions, 11 (7) 67-78 (2007)
Date:
2007-07-01
DOI:
http://dx.doi.org/10.1149/1.2779071

Author Information

Name Institution
Liqi WuState University of New York at Albany
Wanxue ZengState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma Cu

Hardware used: TEL Phoenix CVD cluster tool
copper(II) acetylacetonate, bis(2,4-pentanedionato) copper(II), cupric acetylacetonate, Cu(acac)2
CAS#: 13395-16-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 85C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 200CX

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Scintag XDS 2000

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI600

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Thermomicroscopes Autoprobe CPResearch system

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone SYS-301 resistivity probing system

Substrates

SiO2
TaN
Ru

Notes

1175