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GeSbTe deposition for the PRAM application

Type:
Journal
Info:
Applied Surface Science 253 (2007) 3969 - 3976
Date:
2006-08-24
DOI:
https://doi.org/10.1016/j.apsusc.2006.08.044

Author Information

Name Institution
Junghyun LeeSamsung Advanced Institute of Technology
Sangjoon ChoiSamsung Advanced Institute of Technology
Changsoo LeeSamsung Advanced Institute of Technology
Yoonho KangSamsung Advanced Institute of Technology
Daeil KimUniversity of Ulsan

Films

Plasma Ge

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMAGe, (Me2N)4Ge, [(CH3)2N]4Ge, Tetrakis(DiMethylAmido) Germanium, Germanium Dimethylamide
CAS#: 7344-40-3
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-325C

Plasma Ge

Hardware used: Custom Direct Capacitively Coupled Plasma
Ge(Si(N(CH3)2)2)4
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-400C

Plasma Sb

Hardware used: Custom Direct Capacitively Coupled Plasma
Tris(DiMethylAmido)Antimony, Sb[(CH3)2N]3, TDMASb
CAS#: 7289-92-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-325C

Plasma Sb

Hardware used: Custom Direct Capacitively Coupled Plasma
Sb(N(Si(CH3)3)2)3
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-400C

Plasma Te

Hardware used: Custom Direct Capacitively Coupled Plasma
DIPTe, DiIsoPropylTelluride, Te(iPr)2
CAS#: 51112-72-2
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-375C

Plasma GeSbTe

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMAGe, (Me2N)4Ge, [(CH3)2N]4Ge, Tetrakis(DiMethylAmido) Germanium, Germanium Dimethylamide
CAS#: 7344-40-3
Tris(DiMethylAmido)Antimony, Sb[(CH3)2N]3, TDMASb
CAS#: 7289-92-1
DIPTe, DiIsoPropylTelluride, Te(iPr)2
CAS#: 51112-72-2
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 250-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ICPMS, Inductively Coupled Plasma Mass Spectrometry
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiO2

Notes

1323